LEAKAGE PATHWAY LAYER FOR SOLAR CELL
Leakage pathway layers for solar cells and methods of forming leakage pathway layers for solar cells are described.
1 . (canceled)
2 . A solar cell, comprising:
a dielectric layer disposed above a substrate;
a phosphorus-doped silicon layer disposed above the dielectric layer; and
an anti-reflective coating layer disposed above the phosphorus-doped silicon layer.
3 . The solar cell of claim 2 , wherein the phosphorus-doped silicon layer comprises a morphology selected from the group consisting of nano-crystalline and fine-grained.
4 . The solar cell of claim 2 , wherein the solar cell is a back-contact solar cell, and the dielectric layer is disposed on a light-receiving surface of the substrate.
5 . The solar cell of claim 2 , wherein the dielectric layer has a thickness in the range of 35-45 Angstroms.
6 . The solar cell of claim 2 , wherein the anti-reflective coating layer has a thickness in the range of 70-80 nanometers.
7 . The solar cell of claim 2 , wherein the dielectric layer is for enabling an electric field effect on a solar-receiving surface of the solar cell, the electric field effect comprising a band bending into the substrate.
8 . The solar cell of claim 2 , wherein the dielectric layer is a silicon dioxide dielectric layer.
9 . A solar cell, comprising:
a dielectric layer disposed above a substrate;
a boron-doped silicon layer disposed above the dielectric layer; and
an anti-reflective coating layer disposed above the boron-doped silicon layer.
10 . The solar cell of claim 9 , wherein the boron-doped silicon layer comprises a morphology selected from the group consisting of nano-crystalline and fine-grained.
11 . The solar cell of claim 9 , wherein the solar cell is a back-contact solar cell, and the dielectric layer is disposed on a light-receiving surface of the substrate.
12 . The solar cell of claim 9 , wherein the dielectric layer has a thickness approximately in the range of 35-45 Angstroms.
13 . The solar cell of claim 9 , wherein the anti-reflective coating layer has a thickness approximately in the range of 70-80 nanometers.
14 . The solar cell of claim 9 , wherein the dielectric layer is for enabling an electric field effect on a solar-receiving surface of the solar cell, the electric field effect comprising a band bending into the substrate.
15 . The solar cell of claim 9 , wherein the dielectric layer is a silicon dioxide dielectric layer.
16 . A solar cell, comprising:
a silicon dioxide dielectric layer disposed above a substrate;
a doped silicon layer disposed above the dielectric layer, wherein the doped silicon layer comprises a morphology selected from the group consisting of nano-crystalline and fine-grained; and
an anti-reflective coating layer disposed above the phosphorus-doped silicon layer.
17 . The solar cell of claim 16 , wherein the doped silicon layer comprises a dopant selected from the group consisting of boron and phosphorus.
18 . The solar cell of claim 16 , wherein the solar cell is a back-contact solar cell, and the dielectric layer is disposed on a light-receiving surface of the substrate.
19 . The solar cell of claim 16 , wherein the dielectric layer has a thickness approximately in the range of 35-45 Angstroms.
20 . The solar cell of claim 16 , wherein the anti-reflective coating layer has a thickness approximately in the range of 70-80 nanometers.
21 . The solar cell of claim 16 , wherein the dielectric layer is for enabling an electric field effect on a solar-receiving surface of the solar cell, the electric field effect comprising a band bending into the substrate.