Self light-emitting element and manufacturing process of self light-emitting element, self light-emitting display device, and electronic equipment
Disclosed is a self light-emitting element including a first electrode, a light-emitting layer disposed above the first electrode, a function layer disposed above the light-emitting layer, and doped with a metal, and a second electrode disposed above the function layer, in which the function layer has a multilayer structure of at least three layers including an uppermost layer, a lowermost layer, and an intermediate layer between the uppermost layer and the lowermost layer, and the intermediate layer is doped with the metal at a lower concentration than the uppermost layer and the lowermost layer.
1. A self light-emitting element comprising:
a first electrode;
a light-emitting layer disposed above the first electrode;
a function layer disposed above the light-emitting layer, and doped with a metal; and
a second electrode disposed above the function layer,
wherein
the function layer has a multilayer structure of at least three layers including an uppermost layer, a lowermost layer, and an intermediate layer between the uppermost layer and the lowermost layer, and the intermediate layer is doped with the metal at a lower concentration than the uppermost layer and the lowermost layer.
2. The self light-emitting element according to claim 1 , wherein
the first electrode is an anode, the second electrode is a cathode, and the metal doped in the function layer is one or more metals selected from a group of metals belonging to the alkali metal group, the alkaline earth metal group, and the rare earth metal group.
3. The self light-emitting element according to claim 1 , wherein
the function layer contains, as a host material, an organic material having at least one of electron transport property or electron injection property.
4. The self light-emitting element according to claim 1 , wherein
a non-doped layer not doped with the metal is included as the intermediate layer.
5. The self light-emitting element according to claim 4 , wherein
the non-doped layer has a thickness of at least 5 nm.
6. The self light-emitting element according to claim 1 , wherein
the function layer has a three-layer structure.
7. The self light-emitting element according to claim 1 , wherein
the lowermost layer and the uppermost layer in the function layer each have a thickness of 5 nm or greater and 30 nm or smaller.
8. The self light-emitting element according to claim 1 , wherein
the lowermost layer and the uppermost layer in the function layer are each doped with the metal at 10 wt % or higher and 60 wt % or lower.
9. The self light-emitting element according to claim 1 , wherein
the lowermost layer of the function layer is doped with the metal at a lower concentration than the uppermost layer.
10. A self light-emitting element comprising:
a first electrode;
a light-emitting layer disposed above the first electrode;
a function layer disposed above the light-emitting layer, and doped with a metal; and
a second electrode disposed above the function layer,
wherein
the function layer is divided, in a thickness direction thereof, in a region on a side of the light-emitting layer, a region on a side of the second electrode, and a middle region between the region on the side of the light-emitting layer and the region on the side of the second electrode, and the middle region is doped with the metal at a lower concentration than the region on the side of the light-emitting layer and the region on the side of the second electrode.
11. The self light-emitting element according to claim 1 , wherein
the light-emitting layer is a coating film.
12. A self light-emitting display device comprising:
a substrate;
a self light-emitting panel including a substrate and a plurality of self light-emitting elements as arrayed in a matrix pattern above the substrate, the self light-emitting elements each including
a first electrode,
a light-emitting layer disposed above the first electrode,
a function layer disposed above the light-emitting layer, and doped with a metal, and
a second electrode disposed above the function layer,
in which
the function layer has a multilayer structure of at least three layers including an uppermost layer, a lowermost layer, and an intermediate layer between the uppermost layer and the lowermost layer, and the intermediate layer is doped with the metal at a lower concentration than the uppermost layer and the lowermost layer; and
a drive section configured to drive the self light-emitting panel such that an image is displayed.
13. Electronic equipment comprising:
as an image display section, the self light-emitting display device including
a substrate,
a self light-emitting panel including a substrate and a plurality of self light-emitting elements as arrayed in a matrix pattern above the substrate, the self light-emitting elements each including
a first electrode,
a light-emitting layer disposed above the first electrode,
a function layer disposed above the light-emitting layer, and doped with a metal, and
a second electrode disposed above the function layer,
in which
the function layer has a multilayer structure of at least three layers including an uppermost layer, a lowermost layer, and an intermediate layer between the uppermost layer and the lowermost layer, and the intermediate layer is doped with the metal at a lower concentration than the uppermost layer and the lowermost layer; and
a drive section configured to drive the self light-emitting panel such that an image is displayed.