High-side gate driver

1. A high-side gate driver that drives an N-type high-side transistor, comprising:

a switching terminal to be coupled to a source of the high-side transistor;

a bootstrap terminal;

a common line;

a reference line;

a selection circuit structured to generate a voltage of the switching terminal or a power supply voltage, whichever is higher, in the common line;

a regulator structured to stabilize a voltage of the reference line at a level lower than a voltage of the common line by a predetermined voltage difference;

a charge pump circuit provided between the common line and the reference line, the charge pump circuit being structured to step up a voltage difference between the common line and the reference line;

a rectifying element structured to charge a bootstrap capacitor provided between the bootstrap terminal and the switching terminal, with an output voltage of the charge pump circuit; and

a driver having an upper power supply terminal coupled to the bootstrap terminal and a lower power supply terminal coupled to the switching terminal, the driver having an output coupled to a gate of the high-side transistor.

2. The high-side gate driver according to claim 1 , further comprising

an overvoltage protection circuit structured to compare a voltage difference between the bootstrap terminal and the switching terminal with a predetermined threshold value, and extract an electric current from the bootstrap terminal when the voltage difference is higher than the threshold value.

3. The high-side gate driver according to claim 2 , wherein the overvoltage protection circuit is structured to supply the electric current extracted from the bootstrap terminal to the common line.

4. The high-side gate driver according to claim 1 , wherein the charge pump circuit includes an oscillator provided between the common line and the reference line, and the oscillator is structured to operate in accordance with a clock generated by the oscillator.

5. The high-side gate driver according to claim 4 , further comprising

an overvoltage protection circuit structured to compare a voltage difference between the bootstrap terminal and the switching terminal with a predetermined threshold value, and to stop the oscillator when the voltage difference is higher than the threshold value.

6. The high-side gate driver according to claim 5 , wherein the overvoltage protection circuit is structured to extract an electric current from the bootstrap terminal when the voltage difference is higher than the threshold value.

7. The high-side gate driver according to claim 6 , wherein the overvoltage protection circuit is structured to supply the electric current extracted from the bootstrap terminal to the common line.

8. The high-side gate driver according to claim 1 , wherein the charge pump circuit includes:

an oscillator structured to use a ground line as a reference; and

a level shifter structured to level-shift a clock generated by the oscillator, and

the charge pump circuit operates in accordance with a clock which is level-shifted by the level shifter.

9. The high-side gate driver according to claim 1 , wherein the regulator includes:

an electric-current source provided between the reference line and ground; and

a feedback circuit structured to control the electric-current source so that a voltage difference between the voltage of the common line and the voltage of the reference line gets close to the predetermined voltage difference.

10. The high-side gate driver according to claim 1 , wherein the high-side gate driver is integrated into one semiconductor substrate.

11. A switching circuit comprising:

a high-side transistor; and

the high-side gate driver according to claim 1 , the high-side gate driver being structured to drive the high-side transistor.

12. A motor driver comprising the high-side gate driver as recited in claim 1 .