Modified internal barrier layer capacitor material and method of fabrication
A new composition of matter, and more specifically a new compound, includes two or more highly resistive materials integrated into the chemistry of the grain boundary of an internal barrier layer capacitor material. This new compound includes a high permittivity and high resistivity dielectric compound. This new compound has high permittivity, high resistivity, and low leakage current. In certain examples the new compound can be used to create a dielectric energy storage device that is a battery with very high energy density, high operating voltage per cell, and an extended battery life cycle.
1. A modified internal barrier layer capacitor material comprising:
a base material comprising unmodified internal barrier capacitor material having grain boundaries;
first and second resistive materials bonded to the grain boundaries of the base material to form modified grain boundaries of the base material, wherein the first resistive material is bonded to grain boundaries of the base unmodified internal barrier capacitor material forming a grain boundary composition which includes nanoparticles of the first resistive material added to nanoparticles of the unmodified internal barrier capacitor material, and wherein the second resistive material is bonded to grain boundaries of the grain boundary composition forming a modified internal barrier layer capacitor material which includes nanoparticles of the second resistive material added to nanoparticles of the grain boundary composition; and
an amorphous region in between the grain boundaries of the modified internal barrier layer capacitor material, the amorphous region including nanoparticles of at least one of the first and second resistive materials; and
wherein the base material comprises calcium copper titanium oxide; and
wherein the calcium copper titanium oxide includes first and second phases of calcium copper titanium oxide, wherein the first phase comprises Calcium Copper Titanium Oxide (CaCu 3 Ti 4 O 12 ) and the second phase comprises Calcium Tricopper Tetratita (CaCu 3 O 12 Ti 14 ).
2. The modified internal barrier layer capacitor material of claim 1 , wherein the first resistive material is an aluminum oxide and the second resistive material is a silicon oxide.
3. The modified internal barrier layer capacitor material of claim 1 , wherein the first phase comprises Calcium Copper Titanium Oxide (CaCu 3 Ti 4 O 12 ) and the second phase is Calcium Tricopper Tetratita (CaCu 3 O 12 Ti 14 ).
4. The modified internal barrier layer capacitor material of claim 1 , wherein the base material comprises Calcium Copper Titanium Oxide (CaCu 3 Ti 4 O 12 ), the first resistive material is aluminum oxide, and the second resistive material is silicon dioxide.
5. The modified internal barrier layer capacitor material of claim 4 , wherein the internal barrier layer capacitor material comprises nanoparticles less than 100 nm in diameter.
6. The modified internal barrier layer capacitor material of claim 1 , wherein the modified internal barrier layer capacitor material has:
a dielectric permittivity of at least 50,000;
a resistivity of at least 10 12 ohms/centimeter; and
a dielectric strength of at least 50 volts per micron of thickness.
7. A multilayer ceramic capacitor comprising:
at least one first electrode;
at least one second electrode; and
a plurality of modified internal barrier layer capacitor materials of claim 1 ,
wherein the at least one first electrode and the at least one second electrode are interleaved between the plurality of modified internal barrier layer capacitor materials, and
wherein each of the plurality of modified internal barrier layer capacitor materials is less than one micron thick.
8. The multilayer ceramic capacitor of claim 7 , further comprising a coating and connecting terminals of the multilayer ceramic capacitor.