NIR broadband emitting phosphors for infrared spectroscopy
A luminescent material is disclosed with emission in the near infrared wavelength range, the luminescent material including Sc 1-x-y A y RE:Cr x , wherein MO=P 3 O 9 , BP 3 O 12 , SiP 3 O 12 ; A=Lu, In, Yb, Tm, Y, Ga, Al, where 0≤x≤0.75, 0≤y≤0.9. A wavelength converting structure including the luminescent phosphor is also disclosed.
1. A luminescent material comprising Sc 1-x-y A y MO:Cr x , wherein MO=P 3 O 9 , (BP 3 O 12 ) 0.5 , or (SiP 5 O 19 ) 0.34 ; A=Lu, In, Yb, Tm, Y, Ga, Al or a mixture thereof, where 0<x≤0.75, 0≤y≤1.
2. The luminescent material of claim 1 , wherein MO is P 3 O 9 and 0<x≤0.5, 0≤y≤0.9.
3. The luminescent material according to claim 1 , comprising Sc 2-x-y A y BP 3 O 12 :Cr x , wherein A=Lu, In, Yb, Tm, Y, Ga, Al or a mixture thereof; 0<x≤0.75, 0≤y≤1.8.
4. The luminescent material according to claim 2 , comprising Sc 2-x-y A y BP 3 O 12 :Cr x , wherein A=Lu, In, Yb, Tm, Y, Ga, Al or a mixture thereof; 0<x≤0.75, 0≤y≤1.8.
5. The luminescent material according to claim 1 , comprising Sc 3-x-y A y SiP 5 O 19 :Cr x , wherein A=Lu, In, Yb, Tm, Y, Ga, Al or a mixture thereof; 0<x≤0.2, 0≤y≤2.
6. The luminescent material according to claim 2 , comprising Sc 3-x-y A y SiP 5 O 19 :Cr x , wherein A=Lu, In, Yb, Tm, Y, Ga, Al or a mixture thereof; 0<x≤0.2, 0≤y≤2.
7. The luminescent material according to claim 3 , comprising Sc 3-x-y A y SiP 5 O 19 :Cr x , wherein A=Lu, In, Yb, Tm, Y, Ga, Al or a mixture thereof; 0<x≤0.2, 0≤y≤2.
8. The luminescent material according to claim 4 , comprising Sc 3-x-y A y SiP 5 O 19 :Cr x , wherein A=Lu, In, Yb, Tm, Y, Ga, Al or a mixture thereof; 0<x≤0.2, 0≤y≤2.
9. The luminescent material according to claim 1 , wherein the luminescent material emits light having a peak wavelength in a range of 700 nm to 1100 nm.
10. A wavelength converting structure comprising an NIR phosphor material, the NIR phosphor material including at least one of Sc 1-x-y A y MO:Cr x , wherein MO=P 3 O 9 , (BP 3 O 12 ) 0.5 , or (SiP 5 O 19 ) 0.34 ; A=Lu, In, Yb, Tm, Y, Ga, Al or a mixture thereof, where 0<x≤0.75, 0≤y≤1.
11. The wavelength converting structure according to claim 10 , further comprising a second phosphor material, wherein the second phosphor material includes at least one of a green phosphor, a red phosphor, and an IR phosphor.
12. The wavelength converting structure according to claim 10 , wherein MO is P 3 O 9 and 0<x≤0.5, 0≤y≤0.9.
13. The wavelength converting structure according to claim 10 , wherein the NIR phosphor comprises Sc 2-x-y A y BP 3 O 12 :Cr x , wherein A=Lu, In, Yb, Tm, Y, Ga, Al or a mixture thereof; 0<x≤0.75, 0≤y≤1.8.
14. The wavelength converting structure according to claim 10 , wherein the NIR phosphor comprises Sc 3-x-y A y SiP 5 O 19 :Cr x , wherein A=Lu, In, Yb, Tm, Y, Ga, Al or a mixture thereof; 0<x≤0.2, 0≤y≤2.
15. The wavelength converting structure according to claim 10 , wherein the NIR phosphor includes at least one of Sc 1-x P 3 O 9 :Cr x (x=0.02, 0.04, 0.08), Sc 2-x-y Ga y BP 3 O 12 :Cr x (x=0.04, y=0.0; x=0.08, y=0.0; x=0.8, y=0.96), and Sc 2.88 SiP 5 O 19 :Cr 0.12 .
16. The wavelength converting structure according to claim 10 , wherein the NIR phosphor includes 5 wt % Sc 0.98 BO 3 :Cr 0.2 and 95 wt % Sc 1.92 BP 3 O 12 :Cr 0.08 .
17. A light emitting device comprising:
a light source emitting a first light; and
the wavelength converting structure of claim 10 disposed in a path of the first light, the NIR phosphor in the wavelength converting structure emitting a second light having a wavelength range of 700 nm to 1100 nm in response to absorbing first light.
18. The light emitting device of claim 17 , wherein the wavelength converting structure comprises a second phosphor material that includes at least one of a green phosphor, a red phosphor, and an IR phosphor.