HIGH POWER LED ASSEMBLY AND METHOD OF FORMING A HIGH POWER LED ASSEMBLY

1 . A light emitting diode (LED) device, comprising:

an LED die to emit light;

a sidewall formed of a transparent material, the sidewall located at side walls of the LED die and surrounding the LED die, wherein the sidewall has an angled profile or a curved profile at an opposite of the sidewall from the LED die; and

encapsulation material surrounding the sidewall, the encapsulation material comprising a reflective material, wherein the encapsulation material is to reflect a portion of the light emitted from the LED die toward a side of the LED device to which the light is to be emitted.

2 . The LED device of claim 1 , further comprising:

a lead frame attached to the LED die on a side of the LED die opposite from which the light is to be emitted from the LED device.

3 . The LED device of claim 2 , wherein a base of the lead frame comprises a polymer, wherein the lead frame includes metallic contacts, and wherein the lead frame is to provide current to the LED die for powering the LED die.

4 . The LED device of claim 2 , wherein the lead frame forms a pocket, wherein the LED die and the sidewall are located within the pocket, and wherein the encapsulation material fills at least a portion of the pocket surrounding the LED die and the sidewall.

5 . The LED device of claim 2 , wherein the side of the LED die is a first side of the LED die, wherein the LED device further comprises:

a wavelength conversion layer attached to the LED die on a second side of the LED die, the second side being opposite to the first side, wherein the side walls of the LED die extend between the first side of the LED die and the second side of the LED die.

6 . The LED device of claim 1 , further comprising:

a wavelength conversion layer attached to a side of the LED die, the side of the LED die being directed toward the side of the LED device to which the light is to be emitted.

7 . The LED device of claim 6 , wherein the wavelength conversion layer is wider than the LED die, and wherein the sidewall abuts a portion of the wavelength conversion layer that extends outside a footprint of the LED die.

8 . The LED device of claim 1 , wherein the reflective material comprises silicone mixed with titanium oxide particles.

9 . A method of producing a light emitting diode (LED) device, comprising:

depositing a sidewall on a wavelength conversion layer, the sidewall being deposited around an LED die on the wavelength conversion layer, the LED die on the wavelength conversion layer with the sidewall forming an LED sub-assembly, wherein the sidewall is formed of a transparent material; and

depositing encapsulation material around the LED sub-assembly, wherein the encapsulation material is formed of a reflective material to reflect light from the LED die.

10 . The method of claim 9 , further comprising:

attaching a lead frame to the LED sub-assembly, wherein the lead frame is attached to an opposite side of the LED die from the wavelength conversion layer; and

dicing the lead frame to produce the LED device.

11 . The method of claim 10 , wherein attaching the lead frame to the LED sub-assembly comprises soldering the lead frame to the LED sub-assembly.

12 . The method of claim 9 , further comprising:

attaching the LED die to the wavelength conversion layer.

13 . The method of claim 12 , wherein attaching the LED die to the wavelength conversion layer comprises:

applying silicone to a surface of the LED die;

positioning the surface of the LED die against the wavelength conversion layer, wherein depositing the sidewall includes to allow a portion of the silicone to flow from between the LED die and the wavelength conversion layer, and wherein capillary forces cause the portion of the silicone to form an angled profile or curved profile; and

curing the silicone to form the sidewall with the angled profile or the curved profile.

14 . The method of claim 12 , wherein attaching the LED die to the wavelength conversion layer comprises:

partially curing the wavelength conversion layer;

positioning the LED die against the wavelength conversion layer while the wavelength conversion layer is partially cured; and

fully curing the wavelength conversion layer with the LED die positioned against the wavelength conversion layer.

15 . The method of claim 9 , further comprising:

attaching a ceramic substrate to the LED sub-assembly, wherein the ceramic substrate is attached to an opposite side of the LED die from the wavelength conversion layer.

16 . The method of claim 9 , wherein depositing the encapsulation material around the LED sub-assembly comprises:

utilizing compression molding or injection molding to mold the encapsulation material around the LED sub-assembly, wherein the encapsulation material covers the LED sub-assembly; and

removing a portion of the encapsulation material to expose a portion of the wavelength conversion layer.

17 . The method of claim 9 , wherein depositing the encapsulation material around the LED sub-assembly comprises:

utilizing one or more inkjet-like dispensers to dispense the encapsulation material around the LED sub-assembly; and

allowing the encapsulation material to cure.

18 . A light emitting diode (LED) device, comprising:

an LED die to emit light;

a ceramic substrate coupled to a first side of the LED die;

a sidewall surrounding the LED die, the sidewall formed of a transparent material, wherein the sidewall abuts sides of the LED die, and wherein the sidewall has an angled profile or a curved profile at a side of the sidewall opposite to the LED die; and

encapsulation material surrounding the sidewall, the encapsulation material comprising a reflective material, wherein the encapsulation material is to reflect a portion of the light.

19 . The LED device of claim 18 , further comprising:

a wavelength conversion layer coupled to a second side of the LED die, the second side of the LED die being opposite to the first side of the LED die, wherein the encapsulation material is to reflect the portion of the light toward the wavelength conversion layer.

20 . The LED device of claim 18 , wherein the ceramic substrate is coupled to the first side of the LED die via interconnects, wherein the ceramic substrate is to provide power to the LED die.