Data storage devices with integrated slider voltage potential control
Disclosed herein is a data storage device comprising a recording media, a slider comprising a write head having a write-field enhancement structure for recording data to the recording media, an electronics module, and a plurality of lines disposed between and coupled to the slider and the electronics module, wherein at least one line of the plurality of lines is configured to both couple a bias voltage to a body of the slider, and carry a bias current for the write-field enhancement structure. Also disclosed herein is a data storage device comprising a slider with an embedded contact sensor, an electronics module, and a plurality of lines disposed between and coupled to the slider and the electronics module, wherein at least one line of the plurality of lines is configured to both couple a bias voltage to a body of the slider, and provide a signal to the embedded contact sensor.
1. A data storage device, comprising:
a recording media;
a slider comprising a write head for recording data to the recording media, the write head including a write-field enhancement structure;
an electronics module; and
a plurality of lines disposed between and coupled to the slider and the electronics module,
wherein at least one line of the plurality of lines is configured to both (a) couple a slider bias voltage to a body of the slider to control a potential of the slider, and (b) carry a bias current for the write-field enhancement structure.
2. The data storage device recited in claim 1 , wherein the write-field enhancement structure is a spin torque oscillator (STO).
3. The data storage device recited in claim 1 , wherein the write-field enhancement structure comprises a DC field generation (DFG) layer.
4. The data storage device recited in claim 1 , wherein the bias current comprises a low-frequency component and a current kick.
5. The data storage device recited in claim 4 , wherein at least one characteristic of the low-frequency component or the current kick is programmable.
6. The data storage device recited in claim 5 , wherein the at least one characteristic comprises one or more of an amplitude, a duration, a timing, a delay, or an advance.
7. The data storage device recited in claim 4 , wherein the electronics module comprises firmware configured to determine at least an aspect of the current kick based at least in part on a resistance of the write-field enhancement structure.
8. The data storage device recited in claim 7 , wherein the electronics module is further configured to determine the resistance of the write-field enhancement structure.
9. The data storage device recited in claim 7 , wherein the at least an aspect of the current kick comprises an amplitude of the current kick.
10. The data storage device recited in claim 4 , wherein the electronics module comprises:
an analog circuit configured to determine at least an aspect of the current kick based at least in part on a resistance of the write-field enhancement structure.
11. The data storage device recited in claim 10 , wherein the analog circuit is a first analog circuit, and wherein the electronics module further comprises:
a second analog circuit configured to determine the resistance of the write-field enhancement structure.
12. The data storage device recited in claim 10 , wherein the at least an aspect of the current kick comprises an amplitude of the current kick.
13. The data storage device recited in claim 4 , wherein the electronics module comprises:
firmware configured to determine at least one of a timing, delay, advance, amplitude, or duration of the current kick.
14. The data storage device recited in claim 4 , further comprising:
a voltage source or a current source to generate the low-frequency component.
15. The data storage device recited in claim 4 , further comprising:
a current source to generate the current kick.
16. The data storage device recited in claim 1 , further comprising circuitry configured to mitigate radio-frequency interference, and wherein the at least one line of the plurality of lines is coupled to the circuitry.
17. The data storage device recited in claim 1 , further comprising a flexure disposed between the electronics module and the slider, the flexure comprising:
a support layer;
an insulator layer;
a conductor layer; and
a cover layer,
and wherein the plurality of lines is in the conductor layer.
18. The data storage device recited in claim 1 , wherein a subset of lines of the plurality of lines is configured to provide a write current to the write head to record the data to the recording media.
19. The data storage device recited in claim 1 , further comprising a push-pull differential circuit coupled to the at least one line and configured to provide the bias current to the write-field enhancement structure.
20. The data storage device recited in claim 19 , wherein the push-pull differential circuit is included in the electronics module.