Semiconductor manufacturing apparatus and manufacturing method of semiconductor device
A semiconductor manufacturing apparatus according to the present embodiment comprises a chamber. A chemical-agent supply part is configured to supply a water-repellent agent or an organic solvent to a surface of a semiconductor substrate having been cleaned with a cleaning liquid in the chamber. A spray part is configured to spray a water-capture agent capturing water into an atmosphere in the chamber.
1. A manufacturing method of a semiconductor device for manufacturing the semiconductor device using a semiconductor manufacturing apparatus, which comprises a chamber, the method comprising:
mounting a semiconductor substrate on a mounting unit;
rotating the semiconductor substrate;
supplying a cleaning liquid to a surface of the semiconductor substrate to remove residue from the semiconductor substrate;
supplying deionized water to the semiconductor substrate to rinse away the cleaning liquid;
spraying, from an upper portion of the chamber, a water-capture agent capturing water into an atmosphere in the chamber, the water-capture agent being sprayed into the atmosphere above the semiconductor substrate in a vaporized state such that the water-capture agent enters into the atmosphere in the chamber in the vaporized state, but not being directly sprayed on the semiconductor substrate, the water-capture agent reacting to water and changing to silanol or siloxane, the upper portion being farther away from the semiconductor substate than from other portions of the chamber where the cleaning liquid and the deionized water are sprayed from, and the other portions being between the upper portion and the semiconductor substrate; and
supplying a water-repellent agent or an organic solvent to a surface of the semiconductor substrate either simultaneously with or after spraying of the water-capture agent to replace water on a surface of the semiconductor substrate with the water-repellent agent or the organic solvent, the water-repellent agent or the organic solvent forming a water-repellent protection film on the surface of the semiconductor substrate;
supplying deionized water to the semiconductor substrate to rinse away the cleaning liquid; and
draining off and drying the deionized water on the surface of the semiconductor substrate,
wherein the water-capture agent reacts with water in the chamber before supplying the water-repellent agent or the organic solvent and decreases the water in the chamber at a time of supplying the water-capture agent.
2. The method of claim 1 , wherein the water-capture agent is a chemical liquid same as the water-repellent agent.
3. The method of claim 1 , wherein the water-repellent agent is a silane coupling agent, and the organic solvent is isopropyl alcohol.
4. The method of claim 2 , wherein the water-repellent agent is a silane coupling agent, and the organic solvent is isopropyl alcohol.
5. The method of claim 1 , further comprising rotating the semiconductor substrate in order to drain off a liquid on the semiconductor substrate after supplying the water-repellent agent or the organic solvent.
6. The method of claim 5 , wherein
the chamber accommodates a plurality of the semiconductor substrates, and
the method includes spraying the organic solvent to surfaces of the semiconductor substrates.
7. The method of claim 1 , wherein supply of the organic solvent includes spraying the water-repellent agent or the organic solvent to the surface of the semiconductor substrate.
8. The method of claim 1 , wherein
the chamber accommodates a plurality of the semiconductor substrates, and
the method includes spraying the organic solvent to surfaces of the semiconductor substrates.