METHOD, APPARATUS AND SYSTEM FOR SINGLE-MOLECULE POLYMERASE BIOSENSOR WITH TRANSITION METAL NANOBRIDGE
The disclosure generally relates to a method, apparatus and system for single-molecule polymerase biosensor having transition metal dichalcogenide (TMD) nanobridge for sequencing, information storage and reading. In an embodiment, the present disclosure relates to nanofabrication of biomolecular sensing devices and to the fabrication of devices for analyzing DNA and related biomolecules. In still another embodiment, the disclosure relates to a DNA-based memory system.
1 . A single-molecule biosensor comprising: a conducting electrode pair disposed on a substrate, the electrode pair comprising a first electrode and a second electrode spaced-apart from the first electrode by a nanogap; a contiguous transition metal dichalcogenide (TMD) layer disposed on the electrode and on the second electrode, the TMD layer configured as a bridge suspended over the nanogap; an enzyme molecule attached to a region of the TMD layer suspended over the nanogap; and a microfluidic system encasing the conducting electrode pair, the contiguous TMD layer and the enzyme molecule attached thereto.
2 . The single-molecule biosensor of claim 1 , wherein the TMD layer comprises a TMD selected from the group consisting of MoS 2 , WS 2 , TiS 2 , ZrS 2 , HfS 2 , VS 2 , NbS 2 , TaS 2 , TcS 2 , ReS 2 , CoS 2 , RhS 2 , IrS 2 , NiS 2 , PdS 2 , PtS 2 , and mixtures thereof.
3 . The single-molecule biosensor of claim 1 , wherein the TMD layer comprises at least one TMD of structure MS (2−x) or MS (2+x) , wherein x is 0-0.3, and M is Mo, W, Ti, Zr, Hf, V, Nb, Ta, Tc, Re, Co, Rh, Ir, Ni, Pd, or Pt.
4 . The single-molecule biosensor of claim 1 , wherein the TMD layer comprises a TMD selected from the group consisting of MoSe 2 , WSe 2 , TiSe 2 , ZrSe 2 , HfSe 2 , VSe 2 , NbSe 2 , TaSe 2 , TcSe 2 , ReSe 2 , CoSe 2 , RhSe 2 , IrSe 2 , NiSe 2 , PdSe 2 , PtSe 2 , and mixtures thereof.
5 . The single-molecule biosensor of claim 1 , wherein the TMD layer comprises at least one TMD of structure MSe (2−x) or MSe (2+x) , wherein x is 0-0.3, and M is Mo, W, Ti, Zr, Hf, V, Nb, Ta, Tc, Re, Co, Rh, Ir, Ni, Pd, or Pt.
6 . The single-molecule biosensor of claim 1 , wherein the TMD layer comprises a TMD selected from the group consisting of MoTe 2 , WTe 2 , TiTe 2 , ZrTe 2 , Hffe 2 , VTe 2 , NbTe 2 , TaTe 2 , TcTe 2 , ReTe 2 , CoTe 2 , RhTe 2 , IrTe 2 , NiTe 2 , PdTe 2 , PtTe 2 , and mixtures thereof.
7 . The single-molecule biosensor of claim 1 , wherein the TMD layer comprises at least one TMD of structure MTe (2−x) or MSe (2+x) , wherein x is 0-0.3, and M is Mo, W, Ti, Zr, Hf, V, Nb, Ta, Tc, Re, Co, Rh, Ir, Ni, Pd, or Pt.
8 . The single-molecule biosensor of claim 1 , wherein the TMD layer comprises a mixed TMD compound selected from the group consisting of Mo(S x Se y Te z ) 2 , W(S x Se y Te z ) 2 , Ti(S x Se y Te z ) 2 , Zr(S x Se y Te z ) 2 , Hf(S x Se y Te z ) 2 , V(S x Se y Te z ) 2 , Nb(S x Se y Te z ) 2 , Ta(S x Se y Te z ) 2 , Tc(S x Se y Te z ) 2 , Re(S x Se y Te z ) 2 , Co(S x Se y Te z ) 2 , Rh(S x Se y Te z ) 2 , Ir(S x Se y Te z ) 2 , Ni(S x Se y Te z ) 2 , Pd(S x Se y Te z ) 2 , Pt(S x Se y Te z ) 2 , and mixtures thereof, wherein (x+y+z) is 0.7-1.3.
9 . The single-molecule biosensor of claim 1 , wherein the TMD layer comprises at least one TMD compound of structure M (1−w) N y X (2−z) Y z , wherein M is Al, Si, Ga, Ge, In, Sn, Sb, Bi, Na, K, Ca, Mg, Sr, or Ba; X is S, Se, or Te; Y is Li, B, C, N, O, P, F, Cl, or I; w is 0-0.3; and z is 0-0.3.
10 . The single-molecule biosensor of claim 1 , wherein the substrate comprises SiO 2 or Al 2 O 3 .
11 . The single-molecule biosensor of claim 1 , wherein the pair of conducting electrodes comprise at least one of Au, Pt, Ag, Pd, Rh, Ru, or alloys thereof.
12 . The single-molecule biosensor of claim 1 , wherein the nanogap is from about 1 nm to about 50 nm.
13 . The single-molecule biosensor of claim 1 , further comprising a dielectric, ceramic or polymer coating layer disposed on the TMD layer on a side opposite the first and second electrodes, wherein the dielectric, ceramic or polymer coating layer includes an opening on the region of the TMD layer suspended over the nanogap, the opening leaving an exposed portion of the TMD layer therein, the opening dimensioned to accommodate only one enzyme molecule.
14 . The single-molecule biosensor of claim 13 , wherein the dielectric, ceramic or polymer layer comprises PMMA or SiO 2 .
15 . The single-molecule biosensor of claim 1 , wherein the enzyme molecule comprises a DNA polymerase or an RNA polymerase.
16 . The single-molecule biosensor of claim 1 , wherein the enzyme molecule is attached to the TMD layer via a biotin-streptavidin linkage.
17 . The single-molecule biosensor of claim 1 , wherein the TMD layer includes as least one of vacancy defects, interstitial defects, and aggregated defects.
18 . The single-molecule biosensor of claim 1 , wherein the pair of conducting electrodes are configured in a circuit as source and drain electrodes, and wherein the circuit further comprises a gate electrode disposed under the nanogap.
19 . A DNA or RNA sequencing device comprising:
an electrode array of conducting electrode pairs disposed on a substrate, each pair of electrodes comprising a source electrode and a drain electrode spaced-apart from the source electrode by a nanogap;
a contiguous transition metal dichalcogenide (TMD) layer disposed on the first electrode and on the second electrode, the TMD layer configured as a bridge suspended over the nanogap;
a polymerase enzyme molecule attached to a region of the TMD layer over the nanogap; and
a microfluidic system encasing the conducting electrode pair, the contiguous TMD layer and the enzyme molecule attached thereto.
20 . The DNA or RNA sequencing device of claim 19 , wherein the TMD layer comprises at least one TMD of structure MX (2−x) or MX (2+x) , wherein X is S, Se or Te; x is 0-0.3; and M is Mo, W, Ti, Zr, Hf, V, Nb, Ta, Tc, Re, Co, Rh, Ir, Ni, Pd, or Pt.