Method of separating light emitting devices formed on a substrate wafer
A method comprises forming a mask on a first surface of a substrate. The mask is patterned to form openings on the first surface of the substrate. Notches are formed in the first surface of the substrate in the openings. The mask is removed from the first surface of the substrate A plurality of LEDs are provided on the first surface of the substrate and between notches. A second surface of the substrate is thinned to expose the notches and separate the LEDs. The second surface of the substrate is opposite of the first surface of the substrate.
1. A method comprising:
forming a mask on a first surface of a substrate;
patterning the mask to form openings on the first surface of the substrate;
thinning a second surface of the substrate that is opposite of the first surface of the substrate;
forming cracks in the first surface of the substrate in the openings;
removing the mask from the first surface of the substrate;
providing a plurality of light emitting devices (LEDs) on the first surface of the substrate, such that an LED of the plurality of LEDs is between the cracks; and
thinning the second surface of the substrate to expose the cracks and separate the LEDs.
2. The method of claim 1 , wherein the cracks are formed using at least one of dry etching and wet etching.
3. The method of claim 1 , wherein forming cracks in the substrate comprises sawing or laser scribing the cracks in the substrate.
4. The method of claim 1 , wherein the cracks are at least one micron deep.
5. The method of claim 1 , wherein the cracks are at least one micron wide.
6. The method of claim 1 , wherein the substrate is sapphire.
7. The method of claim 1 , wherein, after thinning the second surface of the substrate to expose the cracks and separate the LEDs, a portion of the substrate remains attached to each of the LEDs.
8. The method of claim 1 , wherein an LED comprises at least an n-type region, an active region, and a p-type region.
9. The method of claim 1 further comprising connecting the plurality of LEDs to wafer handling tape before thinning the second surface of the substrate to expose the cracks and separate the LEDs.
10. A method comprising:
providing a semiconductor structure on a first surface of a substrate;
forming openings in the semiconductor structure to expose portions of the first surface of the substrate and to separate the semiconductor structure into a plurality of light emitting devices (LEDs);
thinning a second surface of the substrate that is opposite of the first surface of the substrate;
forming cracks in the first surface of the substrate in the openings; and
thinning the second surface of the substrate to expose the cracks and separate the LEDs.
11. The method of claim 10 , wherein the cracks are formed using at least one of dry etching and wet etching.
12. The method of claim 10 , wherein forming cracks in the substrate comprises sawing or laser scribing the cracks in the substrate.
13. The method of claim 10 , wherein the cracks are at least one micron deep.
14. The method of claim 10 , wherein the cracks are at least one micron wide.
15. The method of claim 10 , wherein the substrate is sapphire.
16. The method of claim 10 , wherein, after thinning the second surface of the substrate to expose the cracks and separate the LEDs, a portion of the substrate remains attached to each of the LEDs.
17. The method of claim 10 , wherein an LED comprises at least an n-type region, an active region, and a p-type region.
18. The method of claim 10 further comprising connecting the plurality of LEDs to wafer handling tape before thinning the second surface of the substrate to expose the cracks and separate the LEDs.