Buried-type semiconductor optical device
A buried semiconductor optical device comprises a semiconductor substrate; a mesa-stripe portion including a multi-quantum well layer on the semiconductor substrate; a buried layer consisting of a first portion and a second portion, the first portion covering one side of the mesa-stripe portion, the second portion covering the other side of the mesa-stripe portion, and the first portion and the second portion covering a surface of the semiconductor substrate; and an electrode configured to cause an electric current to flow through the mesa-stripe portion, the buried layer comprising, from the surface, a first, second, and third sublayer, the first and third sublayer each consisting of semi-insulating InP, the first sublayer and the second sublayer forming a pair structure, the second sublayer being located above the multi-quantum well layer, and the second sublayer consisting of one or more layers selected from InGaAs, InAlAs, InGaAlAs, InGaAsP, and InAlAsP.
1. A buried semiconductor optical device comprising:
a semiconductor substrate;
a mesa-stripe portion including a multi-quantum well layer on the semiconductor substrate;
a buried layer consisting of a first portion and a second portion,
the first portion covering one side of the mesa-stripe portion,
the second portion covering the other side of the mesa-stripe portion, and
the first portion and the second portion covering a surface of the semiconductor substrate; and
an electrode configured to cause an electric current to flow through the mesa-stripe portion,
the buried layer comprising, from the surface of the semiconductor substrate, a first sublayer, a second sublayer, and a third sublayer,
the first sublayer, and the third sublayer each consisting of semi-insulating InP,
the first sublayer and the second sublayer forming a pair structure,
the first sublayer being a bottom layer of the buried layer;
the second sublayer being located above the multi-quantum well layer from the surface of the semiconductor substrate, and
the second sublayer consisting of one or more layers selected from a group of InGaAs, InAlAs, InGaAlAs, InGaAsP, and InAlAsP.
2. The buried semiconductor optical device of claim 1 , wherein the second sublayer is located above a top of the mesa-stripe portion.
3. The buried semiconductor optical device of claim 1 , wherein the first sublayer has a thickness equal or less than 5 μm.
4. The buried semiconductor optical device of claim 1 , wherein the second sublayer has a thickness equal or more than 5 nm.
5. The buried semiconductor optical device of claim 1 , wherein the second sublayer is lattice-matched to the first sublayer.
6. The buried semiconductor optical device of claim 1 , wherein the first sublayer and the third sublayer are InP doped with Fe or Ru.
7. The buried semiconductor optical device of claim 1 , wherein the second sublayer includes no impurities which make the second sublayer a p-type or n-type semiconductor.
8. The buried semiconductor optical device of claim 1 wherein the second sublayer is doped with Ru.
9. The buried semiconductor optical device of claim 1 , further comprising:
a buffer layer disposed on the semiconductor substrate.
10. The buried semiconductor optical device of claim 1 , wherein the pair structure comprises a plurality of pair structures.
11. The buried semiconductor optical device of claim 10 , wherein
each of second sublayers of the plurality of pair structures consists of one or more layers selected from InGaAs, InAlAs, InGaAlAs, InGaAsP, and InAlAsP, and
at least one of the second sublayers is different in composition from the rest of the second sublayers.
12. The buried semiconductor optical device of claim 10 , wherein the plurality of pair structures comprises three or more pair structures.