Sputter trap having multimodal particle size distribution
A sputter trap formed on at least a portion of a sputtering chamber component has a plurality of particles and a particle size distribution plot with at least two different distributions. A method of forming a sputter trap having a particle size distribution plot with at least two different distributions is also provided.
1. A sputtering target assembly comprising:
a front surface;
a back surface opposite the front surface;
a sputtering target on at least a portion of the front surface;
a flange extending radially from the sputtering target; and
a sputter trap formed on at least a portion of a front surface of the flange, the sputtering trap including a plurality of particles and having a particle size distribution plot with at least two distinct normal distributions, the plurality of particles comprising metals and metal alloys,
wherein the sputtering target assembly is a monolithic sputtering target assembly.
2. The sputtering target assembly of claim 1 , wherein the plurality of particles of the sputter trap include titanium particles, titanium alloy particles or combinations thereof.
3. The sputtering target assembly of claim 2 , wherein the plurality of particles of the sputter trap consist of titanium particles.
4. The sputtering target assembly of claim 1 , wherein the plurality of particles of the sputter trap include nickel alloy particles.
5. The sputtering target assembly of claim 1 , wherein the sputter trap has a surface roughness (Ra) of at least 38 μm.
6. The sputtering target assembly of claim 1 , wherein the particle size distribution plot has at least three distinct normal distributions.
7. A method of forming a sputter trap on a sputtering target assembly, the method comprising:
adhering particles to at least a portion the sputtering target assembly by a cold spray technique or a thermal spray technique, wherein the particle size distribution plot of the particles adhered has at least two distinct normal distributions, and the plurality of particles comprise metals and metal alloys,
wherein the sputtering target assembly is a monolithic sputtering target assembly.
8. The method of claim 7 , and further comprising forming a textured surface on at least a portion of the sputtering target assembly with bead blasting, knurling or machining, and wherein the particles are adhered to at least a portion of the textured surface.
9. The method of claim 7 , wherein the particles include titanium particles, titanium alloy particles or combinations thereof.
10. The method of claim 9 , wherein the particles consist of titanium particles.
11. The method of claim 7 , wherein the particles include nickel alloy particles.
12. The method of claim 7 , wherein the method further comprises:
combining a first powder having a first mesh size and a second powder having a second mesh size to form a powder mixture, wherein the first mesh size and the second mesh size are different and wherein the step of adhering the particles to at least a portion of the sputtering target assembly includes providing the powder mixture to an apparatus for the cold spray or thermal spray technique.
13. The method of claim 12 , wherein the first mesh size is from 44 (325 mesh) to 20 μm (635 mesh) and the second mesh is from 210 μm (70 mesh) to 53 μm (270 mesh).
14. The method of claim 12 , wherein the first powder is present in an amount from about 15% to about 95% by volume of the powder mixture and the second powder is present in an amount from about 5% to about 85% by volume of the powder mixture.
15. The method of claim 7 , wherein the method further comprises:
combining a first powder having a first mesh size, a second powder having a second mesh size, and a third powder having a third mesh size to form a powder mixture, wherein the first mesh size, the second mesh size, and the third mesh size are different and wherein the step of adhering the particles to at least a portion of the sputtering target assembly includes providing the powder mixture to an apparatus for the cold spray or thermal spray technique.
16. The method of claim 7 , wherein the particles are adhered to at least a portion of the sputtering target assembly by the cold spray technique.
17. The method of claim 7 , wherein the particles are adhered to at least a portion of the sputtering target assembly by the thermal spray technique.
18. The method of claim 17 , wherein the thermal spray technique is plasma spray.
19. The method of any of claim 7 , wherein prior to adhering the particles to the sputtering target assembly, at least a portion of a surface of the sputtering target assembly is subjected to grit blasting and the particles are adhered to at least a portion of the grit blasted surface.