Laser diodes separated from a plurality of laser bars
A laser diode includes a semiconductor body having a substrate and a semiconductor layer sequence arranged on the substrate, which includes an active zone that generates electromagnetic radiation, wherein the semiconductor body has a first main surface and a second main surface opposite the first main surface and at least one first and second laser facet, which are respectively arranged transversely to the first and second main surfaces, and at least one structured facet region located at a transition between the first main surface and at least one of the first and second laser facets, and the structured facet region includes at least a strained compensation layer or a recess.
1. A laser diode comprising:
a semiconductor body having a substrate and a semiconductor layer sequence arranged on the substrate, which comprises an active zone that generates electromagnetic radiation, wherein the semiconductor body has a first main surface and a second main surface opposite the first main surface and at least one first and second laser facet, which are respectively arranged transversely to the first and second main surfaces, and
at least one structured facet region located at a transition between the first main surface and at least one of the first and second laser facets, and the structured facet region comprises at least a strained compensation layer or a recess, wherein the laser diode comprises a contact region at the first main surface, which extends into the recess.
2. The laser diode according to claim 1 , further comprising a ridge structure.
3. The laser diode according to claim 2 , wherein the structured facet region is arranged laterally of and on the ridge structure.
4. The laser diode according to claim 2 , wherein the ridge structure is overmolded by the compensation layer.
5. The laser diode according to claim 2 , wherein the recess extends into the ridge structure.
6. The laser diode according to claim 2 , wherein the at least one recess is arranged laterally of the ridge structure.
7. The laser diode according to claim 1 , further comprising a passivation layer disposed between the compensation layer and the semiconductor layer sequence.
8. The laser diode according to claim 1 , further comprising a contact region, wherein the structured facet region is at least partially covered by the contact region.
9. The laser diode according to claim 1 , wherein the compensation layer is tensile strained.
10. The laser diode according to claim 1 , wherein the compensation layer is formed from stoichiometric or non-stoichiometric compositions of semiconductor or metal oxides or stoichiometric or non-stoichiometric compositions of semiconductor or metal nitrides.
11. The laser diode according to claim 1 , wherein the compensation layer is formed from at least one selected from the group consisting of silicon nitride, silicon oxide, zirconium oxide, tantalum oxide, aluminum oxide, titanium oxide or titanium tungsten nitride, diamond-like carbon, silicon carbide, Ti, Pt, Au and Rh.
12. The laser diode according to claim 1 , wherein the structured facet region is strip-shaped.
13. The laser diode according to claim 8 , wherein the contact region partially covers the compensation layer.