Punch through stopper in bulk finFET device
A method of forming a semiconductor device that includes forming a fin structure from a bulk semiconductor substrate and forming an isolation region contacting a lower portion of a sidewall of the fin structure, wherein an upper portion of the sidewall of the fin structure is exposed. A sacrificial spacer is formed on the upper portion of the sidewall of the fin structure. The isolation regions are recessed to provide an exposed section of the sidewall of the fin structure. A doped semiconductor material is formed on the exposed section of the lower portion of the sidewall of the fin structure. Dopant is diffused from the doped semiconductor material to a base portion of the fin structure.
1. A method for forming a semiconductor device comprising:
providing (i) a fin structure extending horizontally in a first direction, (ii) an isolation layer surrounding a lower portion of the fin structure, (iii) a gate structure disposed over a portion of the fin structure and a portion of the isolation layer, wherein the gate structure extends horizontally in a second direction that is substantially perpendicular to the first direction, and (iv) sacrificial sidewall spacers disposed on sidewalls of an upper portion of the fin structure, wherein the sacrificial sidewall spacers extend above an upper surface of the isolation layer;
recessing the isolation layer to expose an upper surface of the lower portion of the fin structure;
forming doped semiconductor material on the upper surface exposed on the lower portion of the fin structure;
doping a base portion of the fin structure by diffusing dopants from the doped semiconductor material of a first conductivity type through the upper surface of the lower portion of the fin structure,
removing the sacrificial sidewall spacers;
forming source and drain regions on opposing sides of the gate structure; and
subsequent to removing the sacrificial sidewall spacers and prior to forming the source and drain regions, depositing a dielectric fill material over the isolation layer,
wherein the source and drain regions are doped with a dopant of a second conductivity type, different from the first conductivity type.
2. The method of claim 1 , wherein:
forming doped semiconductor material on the upper surface comprises depositing a doped semiconductor material on the upper surface of the lower portion of the fin structure; and
doping a base portion of the fin structure comprises diffusing dopants from the doped semiconductor material into the base portion of the fin structure by thermal annealing.
3. The method of claim 2 , wherein depositing the doped semiconductor material comprises selectively depositing the doped semiconductor material.
4. The method of claim 2 , wherein the doped semiconductor material comprises silicon and germanium.
5. The method of claim 2 , wherein the doped semiconductor material comprises silicon and carbon.
6. The method of claim 1 , wherein:
forming doped semiconductor material on the upper surface comprises epitaxially growing a doped semiconductor material on the upper surface of the lower portion of the fin structure; and
doping the base portion of the fin structure further comprises diffusing dopants from the doped semiconductor material into the base portion of the fin structure by thermal annealing.
7. The method of claim 1 , wherein the fin structure has a width between about 3 nm and about 8 nm.
8. The method of claim 1 , wherein recessing the isolation layer lowers an upper surface of the isolation layer between about 5 nm and about 20 nm.
9. The method of claim 1 , wherein recessing the isolation layer lowers an upper surface of the isolation layer between about 10 nm and about 15 nm.
10. A method for forming a semiconductor device comprising:
providing (i) a fin structure extending horizontally in a first direction, (ii) an isolation layer surrounding a lower portion of the fin structure, (iii) a gate structure disposed over a portion of the fin structure and a portion of the isolation layer, wherein the gate structure extends horizontally in a second direction that is substantially perpendicular to the first direction, and (iv) sacrificial sidewall spacers disposed on sidewalls of an upper portion of the fin structure, wherein the sacrificial sidewall spacers extend above an upper surface of the isolation layer;
recessing the isolation layer to form an exposed surface of the lower portion of the fin structure;
epitaxially growing a doped semiconductor material on the exposed surface of the lower portion of the fin structure;
diffusing dopants of a first conductivity type from the doped semiconductor material into a base portion of the fin structure by thermal annealing;
removing the sacrificial sidewall spacers;
forming source and drain regions on opposing sides of the gate structure; and
subsequent to removing the sacrificial sidewall spacers and prior to forming the source and drain regions, depositing a dielectric fill material over the isolation layer,
wherein the source and drain regions are doped with a dopant of a second conductivity type, different from the first conductivity type.
11. The method of claim 10 , wherein the fin structure has a width between about 3 nm and about 8 nm.
12. The method of claim 10 , wherein recessing the isolation layer lowers an upper surface of the isolation layer between about 5 nm and about 20 nm.
13. The method of claim 10 , wherein recessing the isolation layer lowers an upper surface of the isolation layer between about 10 nm and about 15 nm.
14. The method of claim 10 , wherein epitaxially growing the doped semiconductor material comprises selectively epitaxially growing the doped semiconductor material.
15. The method of claim 10 , wherein the doped semiconductor material comprises silicon and germanium.
16. The method of claim 10 , wherein the doped semiconductor material comprises silicon and carbon.