Semiconductor device comprising a monitor including a second semiconductor layer in which dark current is changed by a heater
An optical semiconductor element includes an optical receiver including a first semiconductor layer, a heater for heating the first semiconductor layer; and a monitor. A first semiconductor layer that absorbs light and generates electric carriers; a heater for heating the first semiconductor layer; and a monitor including a second semiconductor layer in which dark current is changed by heat generated by the heater.
1. An optical semiconductor element comprising:
an optical receiver including a first semiconductor layer that absorbs light and generates electric carriers;
a heater that heats the first semiconductor layer; and
a monitor including a second semiconductor layer in which dark current is changed by heat generated by the heater.
2. The optical semiconductor element according to claim 1 ,
wherein the first semiconductor layer and the second semiconductor layer are Si x Ge 1-x layers (0≤x<1) or Ge 1-x Sn x layers (0≤x<1).
3. The optical semiconductor element according to claim 1 , further comprising:
a waveguide that guides light to the optical receiver,
wherein the monitor is disposed so as to be shifted from an extended line of an optical axis of the waveguide.
4. The optical semiconductor element according to claim 1 , further comprising:
a first barrier that suppresses light propagation between the optical receiver and the heater; and
a second barrier that suppresses light propagation between the heater and the monitor.
5. The optical semiconductor element according to claim 4 , further comprising:
a third semiconductor layer which is provided over the optical receiver, the heater, and the monitor and through which the light propagates,
wherein the first semiconductor layer and the second semiconductor layer are formed over the third semiconductor layer,
the first barrier includes a first slit formed in the third semiconductor layer, and
the second barrier includes a second slit formed in the third semiconductor layer.
6. The optical semiconductor element according to claim 5 ,
wherein the first slit and the second slit penetrate the third semiconductor layer in a thickness direction.
7. The optical semiconductor element according to claim 1 ,
wherein a temperature of the first semiconductor layer and a temperature of the second semiconductor layer are increased to be equal to each other by the heater.
8. The optical semiconductor element according t claim 7 ,
wherein the heater is positioned at a center position between the first semiconductor layer and the second semiconductor layer.
9. The optical semiconductor element according to claim 1 , further comprising:
an electrode common to the optical receiver and the heater.
10. The optical semiconductor element according to claim 9 ,
wherein the electrode is also common to the monitor.
11. The optical semiconductor element according to claim 10 ,
wherein the optical receiver includes a first semiconductor region of a first conductivity type with which the electrode is in ohmic contact,
the heater includes a second semiconductor region of the first conductivity type with which the electrode is in ohmic contact,
the monitor includes a third semiconductor region of the first conductivity type with which the electrode is in ohmic contact,
a fourth semiconductor region of a second conductivity type is included between the first semiconductor region and the second semiconductor region, and
a fifth semiconductor region of the second conductivity type is included between the second semiconductor region and the third semiconductor region.
12. The optical semiconductor element according to claim 11 , further comprising:
a second electrode that applies power to the heater between the electrode and the second electrode,
wherein the fourth semiconductor region and the fifth semiconductor region are electrically coupled to the second electrode.
13. The optical semiconductor element according to claim 11 , further comprising:
a first switch provided between the fourth semiconductor region and ground; and
a second switch provided between the fifth semiconductor region and ground.
14. An optical semiconductor device comprising:
an optical receiver including a first semiconductor layer that absorbs light and generates electric carriers;
a heater that heats the first semiconductor layer;
a monitor including a second semiconductor layer in which dark current is changed by heat generated by the heater; and
a controller that controls the heater based on the dark current.
15. The optical semiconductor device according to claim 14 ,
wherein the first semiconductor layer and the second semiconductor layer are SixGe1−x layers (0≤x<1) or Ge1−xSnx layers (0≤x<1).
16. The optical semiconductor device according to claim 14 , further comprising:
a waveguide that guides light to the optical receiver,
wherein the monitor is disposed so as to be shifted from an extended line of an optical axis of the waveguide.
17. The optical semiconductor device according to claim 14 , further comprising:
a first barrier that suppresses light propagation between the optical receiver and the heater; and
a second barrier that suppresses light propagation between the heater and the monitor.
18. The optical semiconductor device according to claim 14 ,
wherein a temperature of the first semiconductor layer and a temperature of the second semiconductor layer are increased to be equal to each other by the heater.
19. An optical semiconductor element comprising:
an optical receiver including a first semiconductor layer that absorbs light and generates electric carriers;
a monitor including a second semiconductor layer; and
a heater arranged between the optical receiver and the monitor that heats the first semiconductor layer and the second semiconductor layer.
20. The optical semiconductor element according to claim 19 , wherein the heater heats the first semiconductor layer to increase light receiving sensitivity on a long wavelength side of a detection range of the optical receiver.