IP Library Granted Patent US 11,507,704
Granted Patent B2
US 11,507,704 · App. 16/856,952 · Granted Nov 22, 2022

Current flattening circuit for protection against power side channel attacks

Inventors: Nikola Nedovic (San Jose, CA); Sudhir Shrikantha Kudva (Dublin, CA)
Assignee: NVIDIA CORP.
G06F21/755H02M1/08H02M1/44H02M3/155
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 11,507,704
App. No.
16/856,952
Granted
Nov 22, 2022
Kind
B2
Abstract

Various implementations of a current flattening circuit are disclosed, including those utilizing a feedback current regulator, a feedforward current regulator, and a constant current source.

Claims (29)

1. A current flattening circuit for an electrical load, comprising:

one or more pass-gate transistor arranged in series with the load and configured with a fixed gate bias voltage;

a differential high pass filter coupled across the one or more pass-gate transistor;

a controlled current source configured to respond to an output of the differential high pass filter to generate a proportional shunt current for the load.

2. The current flattening circuit of claim 1 , wherein the controlled current source is configured as a feedback current regulator.

3. The current flattening circuit of claim 1 , the shunt current configured to be directed to circuit ground.

4. The current flattening circuit of claim 1 , the differential high pass filter comprising a mirrored pair of cells, each cell comprising a PMOS transistor stacked with an NMOS transistor.

5. The current flattening circuit of claim 4 , further comprising a differential amplifier interposed between the differential high pass filter and the controlled current source.

6. The current flattening circuit of claim 5 , further comprising a capacitor coupled to receive an output of the differential amplifier.

7. The current flattening circuit of claim 1 , configured such that a sensed voltage across the one or more pass-gate transistor controls an amount of the shunt current.

8. A circuit comprising:

a regulated transistor interposed between a power supply and a load;

a differential high pass filter coupled across the load current sensor, the differential high pass filter having a gain;

a differential amplifier coupled to outputs of the differential high pass filter; and

the differential amplifier coupled to control a current source shunting the load.

9. The circuit of claim 8 wherein the regulated transistor is a PMOS transistor configured with a fixed gate bias voltage.

10. The circuit of claim 8 further comprising a capacitor connected at a node connecting an output of the differential amplifier to a control input of the current source.

11. The circuit of claim 8 , wherein the current source comprises a feedback current regulator.

12. The circuit of claim 8 , the current source configured to shunt current to circuit ground from a power supply input for the load.

13. The circuit of claim 8 , the differential high pass filter comprising a mirrored pair of cells, each cell comprising a PMOS transistor stacked with an NMOS transistor.

14. The circuit of claim 8 , configured such that a sensed voltage across the load current sensor controls an amount of current flowing through the current source.

15. A process for flattening variations in a supply voltage applied to a load, the proccess comprising:

applying a constant gate bias to a transistor interposed between the supply voltage and the load;

high pass filtering a voltage generated across the transistor to generate high-passed filtered voltage;

applying the high-passed filtered voltage to a differential amplifier to generate a control voltage; and

controlling a current source shunting the load with the control voltage.

16. The process of claim 15 , further comprising:

amplifying the voltage across the transistor with a high pass filter utilized for the high pass filtering.

17. The process of claim 15 , wherein the high-pass filtering is performed with a mirrored pair of cells, each cell comprising a PMOS transistor stacked with an NMOS transistor.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 28, 2020
From: NEDOVIC, NIKOLA; KUDVA, SUDHIR SHRIKANTHA
To: NVIDIA CORP.
Reel/Frame 052773/0547 →
Continuity (1)
Related Publication 20210334411A1 · Oct 28, 2021
Cited By (1)
US 12,282,589