IP Library Granted Patent US 11,430,919
Granted Patent B2
US 11,430,919 · App. 16/857,064 · Granted Aug 30, 2022

High brightness LEDs with non-specular nanostructured thin film reflectors

Inventor: Venkata Ananth Tamma (San Jose, CA)
Assignee: Lumileds LLC
H01L33/46H01L27/15H01L33/10H01L33/32H01L33/58H01L33/60H01L2933/0083H01L2933/0091
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Quick Facts
Patent No.
US 11,430,919
App. No.
16/857,064
Granted
Aug 30, 2022
Kind
B2
Abstract

A light emitting device comprises a semiconductor diode structure configured to emit light, a substrate that is transparent to light emitted by the semiconductor diode structure, and a reflective nanostructured layer. The reflective nanostructured layer may be disposed on or adjacent to a bottom surface of the substrate and configured to reflect toward and through a side wall surface of the substrate light that is emitted by the semiconductor structure and incident on the reflective nanostructured layer at angles at or near perpendicular incidence. Alternatively, the reflective nanostructured layer may be disposed on or adjacent to at least one sidewall surface of the substrate and configured to reflect toward and through the bottom surface of the substrate light that is emitted by the semiconductor structure and incident on the reflective nanostructured layer at angles at or near perpendicular incidence.

Claims (21)

1. A light emitting device comprising:

a semiconductor diode structure configured to emit light;

a substrate that is transparent to light emitted by the semiconductor diode structure and comprises a top surface on which the semiconductor diode structure is disposed, a bottom surface positioned opposite from the top surface, and sidewall surfaces extending between the top and bottom surfaces; and

a reflective nanostructured layer disposed on or adjacent to at least one sidewall surface of the substrate and configured to reflect toward and through the bottom surface of the substrate light emitted by the semiconductor structure and incident on the reflective nanostructured layer at angles at or near perpendicular incidence.

2. The light emitting device of claim 1 , wherein the reflective nanostructured layer is or comprises a photonic crystal.

3. The light emitting device of claim 1 , wherein the reflective nanostructured layer is or comprises a metamaterial or metasurface.

4. The light emitting device of claim 1 , wherein the reflective nanostructured layer is or comprises a grating of asymmetric nanoantennas having a period less than or equal to a wavelength of light emitted by the semiconductor diode structure.

5. The light emitting device of claim 4 , wherein at least one asymmetric nanoantenna is a single asymmetric light scattering object.

6. The light emitting device of claim 4 , wherein at least one asymmetric nanoantenna comprises two or more light scattering objects in an asymmetric arrangement.

7. The light emitting device of claim 1 , wherein the reflective nanostructured layer has a thickness perpendicular to the sidewall surface of the substrate that is less than or equal to a wavelength of light emitted by the semiconductor diode structure.

8. The light emitting device of claim 1 , wherein:

the reflective nanostructured layer comprises a specular reflector, a dielectric layer disposed between the specular reflector and the substrate, and a periodic arrangement of nanoantennas disposed between the specular reflector and the substrate and spaced apart from the specular reflector by the dielectric layer; and

each nanoantenna scatters light asymmetrically.

9. The light emitting device of claim 8 , wherein at least one nanoantenna is a single asymmetric light scattering object.

10. The light emitting device of claim 8 , wherein a first one of the nanoantennas and a second one of the nanoantennas differ in size, shape, or size and shape.

11. The light emitting device of claim 8 , wherein at least one nanoantenna comprises two or more light scattering objects in an asymmetric arrangement.

12. The light emitting device of claim 11 , wherein the two or more light scattering objects are each individually symmetric.

13. The light emitting device of claim 12 , wherein the two or more light scattering objects are each of the same shape but are of different sizes.

14. The light emitting device of claim 11 , wherein at least one of the two or more light scattering objects is asymmetric.

15. The light emitting device of claim 11 , wherein the two or more light scattering objects are disposed in a periodic arrangement.

16. The light emitting device of claim 11 , wherein the two or more light scattering objects are disposed in an aperiodic arrangement.

Assignments (5)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 10, 2025
From: LUMILEDS LLC
To: LUMILEDS SINGAPORE PTE. LTD.
Reel/Frame 071888/0086 →
RELEASE OF SECURITY INTEREST Recorded Jan 29, 2025
From: SOUND POINT AGENCY LLC
To: LUMILEDS LLC; LUMILEDS HOLDING B.V.
Reel/Frame 070046/0001 →
SECURITY INTEREST Recorded Jan 5, 2023
From: LUMILEDS LLC; LUMILEDS HOLDING B.V.
To: SOUND POINT AGENCY LLC
Reel/Frame 062299/0338 →
PATENT SECURITY AGREEMENT Recorded Dec 9, 2022
From: LUMILEDS, LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH
Reel/Frame 062114/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 24, 2020
From: TAMMA, VENKATA ANANTH
To: LUMILEDS LLC
Reel/Frame 052491/0578 →