Resiliency scheme to enhance storage performance
A storage system has a resiliency scheme to enhance storage system performance. The storage system composes a RAID stripe. The storage system mixes an ordering of portions of the RAID stripe, based on reliability differences across portions of the solid-state memory. The storage system writes the mixed ordering RAID stripe across the solid-state memory.
1. A method, comprising:
composing a RAID stripe of data to be written across solid-state memory of a storage system;
mixing an ordering of portions of the RAID stripe of data, based on reliability differences across portions of the solid-state memory;
selecting an error correction code (ECC) scheme based on the reliability differences across the portions of the solid-state memory, for the RAID stripe of data; and
writing the mixed ordering RAID stripe of data across the solid-state memory.
2. The method of claim 1 , wherein:
the reliability differences comprise reliability differences among pages of an atomic write page group of the solid-state memory;
the mixed ordering of portions of the RAID stripe comprises a first RAID stripe with a first mixed ordering into pages of a first atomic write page group in the solid-state memory; and
the storage system is further to write a second, differing mixed ordering of portions of a second RAID stripe into pages of a second atomic write page group in the solid-state memory.
3. The method of claim 1 , wherein:
the reliability differences comprise reliability differences among pages in an atomic write page group of the solid-state memory; and
the mixed ordering of portions of the RAID stripe comprises a first mixed ordering of a first portion of the RAID stripe across a first type of solid-state memory and a second, differing mixed ordering of a second portion of the RAID stripe of data across a second type of solid-state memory.
4. The method of claim 1 , further comprising:
using an identifier of a storage device of the storage system as a seed for a function that determines the mixed ordering.
5. The method of claim 1 , further comprising:
reading the mixed ordering RAID stripe of data from the solid-state memory; and
rearranging the ordering of the portions of the mixed ordering RAID stripe to reconstitute the RAID stripe of data.
6. The method of claim 1 , further comprising:
scrubbing the solid-state memory, through wear monitoring the solid-state memory at varied address intervals or varied address offsets, and rewriting data from worn regions of solid-state memory to further regions of solid-state memory using mixed ordering of portions of the rewritten data.
7. A tangible, non-transient, computer readable media having instructions thereon for one or more processors to perform a method, comprising:
composing a RAID stripe of data to be written across solid-state memory of a storage system;
mixing an ordering of portions of the RAID stripe of data, based on reliability differences across portions of the solid-state memory, the mixing using an identifier of a storage device of the storage system as a seed for a function that determines the mixed ordering; and
writing the mixed ordering RAID stripe of data across the solid-state memory.
8. The computer readable media of claim 7 , wherein:
the reliability differences comprise reliability differences among pages of an atomic write page group of the solid-state memory;
the mixed ordering of portions of the RAID stripe comprises a first RAID stripe with a first mixed ordering into pages of a first atomic write page group in the solid-state memory; and
the storage system is further to write a second, differing mixed ordering of portions of a second RAID stripe into pages of a second atomic write page group in the solid-state memory.
9. The computer readable media of claim 7 , wherein:
the reliability differences comprise reliability differences among pages in an atomic write page group of the solid-state memory; and
the mixed ordering of portions of the RAID stripe comprises a first mixed ordering of a first portion of the RAID stripe across a first type of solid-state memory and a second, differing mixed ordering of a second portion of the RAID stripe of data across a second type of solid-state memory.
10. The computer readable media of claim 7 , wherein the method further comprises:
reading the mixed ordering RAID stripe of data from the solid-state memory; and
rearranging the ordering of the portions of the mixed ordering RAID stripe to reconstitute the RAID stripe of data.
11. The computer readable media of claim 7 , wherein the method further comprises:
selecting an error correction code (ECC) scheme based on the reliability differences across the portions of the solid-state memory, for the RAID stripe of data.
12. The computer readable media of claim 7 , wherein the method further comprises:
scrubbing the solid-state memory, through wear monitoring the solid-state memory at varied address intervals or varied address offsets, and rewriting data from worn regions of solid-state memory to further regions of solid-state memory using mixed ordering of portions of the rewritten data.
13. A storage system, comprising:
solid-state memory; and
a processing device to:
compose a RAID stripe of data to be written across solid-state memory of the storage system;
mix an ordering of portions of the RAID stripe of data, based on reliability differences across portions of the solid-state memory;
select an error correction code (ECC) scheme based on the reliability differences across the portions of the solid-state memory, for the RAID stripe of data; and
write the mixed ordering RAID stripe of data across the solid-state memory.
14. The storage system of claim 13 , wherein:
the reliability differences comprise reliability differences among pages of an atomic write page group of the solid-state memory;
the mixed ordering of portions of the RAID stripe comprises a first RAID stripe with a first mixed ordering into pages of a first atomic write page group in the solid-state memory; and
the processing device is further to write a second, differing mixed ordering of portions of a second RAID stripe into pages of a second atomic write page group in the solid-state memory.
15. The storage system of claim 13 , wherein:
the reliability differences comprise reliability differences among pages in an atomic write page group of the solid-state memory; and
the mixed ordering of portions of the RAID stripe comprises a first mixed ordering of a first portion of the RAID stripe across a first type of solid-state memory and a second, differing mixed ordering of a second portion of the RAID stripe of data across a second type of solid-state memory.
16. The storage system of claim 13 , wherein the processing device is further to:
use an identifier of a storage device of the storage system as a seed for a function that determines the mixed ordering.
17. The storage system of claim 13 , wherein the processing device is further to:
read the mixed ordering RAID stripe of data from the solid-state memory; and
rearrange the ordering of the portions of the mixed ordering RAID stripe to reconstitute the RAID stripe of data.
18. The storage system of claim 13 , wherein the processing device is further to:
scrub the solid-state memory, through wear monitoring the solid-state memory at varied address intervals or varied address offsets, and rewriting data from worn regions of solid-state memory to further regions of solid-state memory using mixed ordering of portions of the rewritten data.