Quantum dot photovoltaic junctions
The present disclosure is directed to photovoltaic junctions and methods for producing the same. Embodiments of the disclosure may be incorporated in various devices for applications such as solar cells and light detectors and may demonstrate advantages compared to standard materials used for photovoltaic junctions such as silica. An example embodiment of the disclosure includes a photovoltaic junction, the junction including a light absorbing material, an electron acceptor for shuttling electrons, and a metallic contact. In general, embodiments of the disclosure as disclosed herein include photovoltaic junctions which provide absorption across one or more wavelengths in the range from about 200 nm to about 1000 nm, or from near IR (NIR) to ultra-violet (UV). Generally, these embodiments include a multi-layered light absorbing material that can be formed from quantum dots that are successively deposited on the surface of an electron acceptor (e.g., a semiconductor).
1. A photovoltaic junction comprising:
a first layer comprising a light absorbing material, the light absorbing material comprising a plurality of quantum dots;
a second layer comprising a semiconductor, a first surface area of the second layer forming a first physical junction with a first surface area of the first layer, the first physical junction forming a first diode that exhibits Shockley-Read Hall trap-assisted recombination; and
a third layer comprising graphene, a first surface area of the third layer forming a second physical junction with a second surface area of the second layer, the second physical junction forming a second diode, wherein the second diode is a Schottky diode, a second surface area of the third layer forming a third physical junction with a second surface area of the first layer, the third physical junction forming an ohmic contact, wherein
the photovoltaic junction provides absorption across one or more wavelengths in the range from about 200 nm to about 2000 nm.
2. The photovoltaic junction of claim 1 , wherein the plurality of quantum dots includes a plurality of lead sulfide quantum dots.
3. The photovoltaic junction of claim 1 , wherein the first layer includes the plurality of quantum dots in a thin film.
4. The photovoltaic junction of claim 3 , wherein the thin film includes a thickness from about 8 nm to about 400 nm.
5. The photovoltaic junction of claim 1 , wherein the semiconductor has a bandgap greater than a bandgap of the first layer.
6. The photovoltaic junction of claim 1 , wherein the semiconductor comprises a nitride.
7. The photovoltaic junction of claim 1 , wherein the semiconductor comprises a carbide.
8. The photovoltaic junction of claim 1 , wherein the graphene includes multiple monolayers of graphene.
9. The photovoltaic junction of claim 8 , wherein the graphene includes from about 5 monolayers to about 90 monolayers of graphene.
10. The photovoltaic junction of claim 1 , wherein the first layer has a thickness of from about 10 nm to about 300 nm.
11. The photovoltaic junction of claim 1 , wherein the second layer has a thickness that is greater than the thickness of the first layer.
12. The photovoltaic junction of claim 1 , wherein the second layer has a thickness that is from about 5 micrometers to about 200 micrometers.