BiSb topological insulator with seed layer or interlayer to prevent sb diffusion and promote BiSb (012) orientation
A spin-orbit torque (SOT) magnetic tunnel junction (MTJ) device includes a substrate, a seed layer over the substrate, and a bismuth antimony (BiSb) layer having (0120) orientation on the seed layer. The seed layer includes a silicide layer and a surface control layer. The silicide layer includes a material of NiSi, NiFeSi, NiFeTaSi, NiCuSi, CoSi, CoFeSi, CoFeTaSi, CoCuSi, or combinations thereof. The surface control layer includes a material of NiFe, NiFeTa, NiTa, NiW, NiFeW, NiCu, NiCuM, NiFeCu, CoTa, CoFeTa, NiCoTa, Co, CoM, CoNiM, CoNi, NiSi, CoSi, NiCoSi, Cu, CuAgM, CuM, or combinations thereof, in which M is Fe, Cu, Co, Ta, Ag, Ni, Mn, Cr, V, Ti, or Si.
1. A spin-orbit torque (SOT) magnetic tunnel junction (MTJ) device, comprising:
a substrate;
a seed layer over the substrate, the seed layer comprising:
a silicide layer comprising a material selected from a group consisting of NiSi, NiFeSi, NiFeTaSi, NiCuSi, CoSi, CoFeSi, CoFeTaSi, CoCuSi, and combinations thereof; and
a surface control layer comprising a material selected from a group consisting of NiFe, NiFeTa, NiTa, NiW, NiFeW, NiCu, NiCuM, NiFeCu, CoTa, CoFeTa, NiCoTa, Co, CoM, CoNiM, CoNi, NiSi, CoSi, NiCoSi, Cu, CuAgM, CuM, and combinations thereof, wherein M is selected from a group consisting of Fe, Cu, Co, Ta, Ag, Ni, Mn, Cr, V, Ti, and Si; and
a bismuth antimony (BiSb) layer on the seed layer, the BiSb layer having a (012) orientation.
2. The SOT MTJ device of claim 1 , wherein the silicide layer has a thickness from about 1 Å to about 30 Å.
3. The SOT MTJ device of claim 1 , wherein the silicide layer comprises one or more stacks of a laminate comprising a silicon layer and a metal layer, the metal layer comprising a material selected from a group consisting of Ni, NiFe, NiFeTa, NiCu, Co, CoFe, CoFeTa, CoCu, and combinations thereof.
4. The SOT MTJ device of claim 3 , wherein the silicide layer comprises one to four stacks of the laminate.
5. The SOT MTJ device of claim 1 , wherein the surface control layer has a thickness from about 1 Å to about 20 Å.
6. The SOT MTJ device of claim 1 , wherein the surface control layer comprises a first layer over the silicide layer and comprises a second layer over the first layer,
wherein the first layer comprises a material selected from a group consisting of NiFe, NiFeTa, NiTa, NiW, NiFeW, NiCu, NiCuAg, NiCuM, NiFeCu, CoTa, CoFeTa, NiCoTa, Co, CoCu, and combinations thereof, in which M is selected from a group consisting of Fe, Cu, Co, Ta, Ag, Ni, Mn, Cr, V, Ti, and Si, and
wherein the second layer comprises a material selected from a group consisting of CoNi, NiSi, CoSi, NiCoSi, CuAgNi, CuM, CuNiM, Ni, CoCu, Cu, Co, NiCu, and combinations thereof, in which M is selected from a group consisting of Fe, Cu, Co, Ta, Ag, Ni, Mn, Cr, V, Ti, and Si.
7. The SOT MTJ device of claim 1 , further comprising a silicon base layer between the substrate and the seed layer, the silicon base layer having a thickness from about 1 Å and about 30 Å.
8. A magnetic media drive, comprising the SOT MTJ device of claim 1 .
9. A magnetoresistive random access memory device, comprises the SOT MTJ device of claim 1 .
10. A magnetic recording write head, comprising the SOT MTJ device of claim 1 .
11. A spin-orbit torque (SOT) magnetic tunnel junction (MTJ) device, comprising:
a substrate;
a seed layer disposed over the substrate;
a bismuth antimony (BiSb) layer over the seed layer, the BiSb layer having a (012) orientation; and
an interlayer over the BiSb layer, the interlayer comprising:
a silicide layer comprising a material selected from a group consisting of NiSi, FeSi, CoSi, NiCuSi, NiFeTaSi, CoCuSi, and combinations thereof.
12. The SOT MTJ device of claim 11 , wherein the silicide layer has a thickness from about 1 Å to about 30 Å.
13. The SOT MTJ device of claim 11 , wherein the silicide layer comprises one or more stacks of a laminate, the laminate comprising a silicon layer and a metal layer, the metal layer comprising a material selected from a group consisting of Ni, Fe, Co, NiCu, NiFeTa, CoCu, NiFe, NiFeCu, Cu, and combinations thereof.
14. The SOT MTJ device of claim 13 , wherein the silicide layer comprises one to four stacks of the laminate.
15. The SOT MTJ device of claim 11 , wherein the interlayer further comprises a surface control layer between the BiSb layer and the silicide layer, the surface control layer comprising a material selected from a group consisting of Cu, Ni, NiFe, Fe, Co, NiCu, NiFeTa, CoCu, NiFeCu, and combinations thereof.
16. The SOT MTJ device of claim 15 , wherein the interlayer has a thickness from about 1 Å to about 10 Å.
17. The SOT MTJ device of claim 11 , further comprising a perpendicular magnetic anisotropy (PMA) ferromagnetic layer over the interlayer.
18. A magnetic media drive, comprising the SOT MTJ device of claim 11 .
19. A magnetoresistive random access memory device, comprises the SOT MTJ device of claim 11 .
20. A magnetic recording write head, comprising the SOT MTJ device of claim 11 .
21. A spin-orbit torque (SOT) magnetic tunnel junction (MTJ) device, comprising:
a substrate;
a seed layer over the substrate, the seed layer comprising:
an amorphous film comprising a material with a nearest neighbor peak d-spacing matching a spacing selected from a group consisting of:
a (111) d-spacing of an fcc lattice with an a-axis in the range of 3.54 Å to 3.78 Å, and
a (002) d-spacing of an hcp lattice with an a-axis in the range of 2.52 Å to 2.68 Å; and
a bismuth antimony (BiSb) layer on the amorphous film, the BiSb layer having a (012) orientation.
22. The SOT MTJ device of claim 21 , wherein the seed layer further comprises a silicide layer between the substrate and the amorphous film, the silicide layer comprising a material selected from a group consisting of NiSi, NiFeSi, NiFeTaSi, NiCuSi, CoSi, CoFeSi, CoFeTaSi, CoCuSi, and combinations thereof.
23. The SOT MTJ device of claim 21 , further comprising an interlayer on the BiSb layer, the interlayer comprising:
an amorphous film on the BiSb layer, the amorphous film comprising:
a material with a nearest neighbor peak d-spacing matching a spacing selected from a group consisting of:
a (111) d-spacing of an fcc lattice with an a-axis in the range of 3.54 Å to 3.78 Å and
a (002) d-spacing of an hcp lattice with an a-axis in the range of 2.52 Å to 2.68 Å.
24. The SOT MTJ device of claim 23 , wherein the interlayer further comprises a silicide layer, the silicide layer comprising a material selected from a group consisting of NiSi, NiFeSi, NiFeTaSi, NiCuSi, CoSi, CoFeSi, CoFeTaSi, CoCuSi, and combinations thereof.
25. A magnetic media drive, comprising the SOT MTJ device of claim 21 .
26. A magnetoresistive random access memory device, comprises the SOT MTJ device of claim 21 .
27. A magnetic recording write head, comprising the SOT MTJ device of claim 21 .