Bonding methods for light emitting diodes
Disclosed herein are techniques for bonding components of LEDs. According to certain embodiments, a micro-LED includes a first component having a semiconductor layer stack including an n-side semiconductor layer, an active light emitting layer, and a p-side semiconductor layer. The semiconductor layer stack includes a III-V semiconductor material. The micro-LED also includes a second component having a passive or an active matrix integrated circuit within a Si layer. A first dielectric material of the first component is bonded to a second dielectric material of the second component, first contacts of the first component are aligned with and bonded to second contacts of the second component, a surface recombination velocity (SRV) of the micro-LED is less than or equal to 3E4 cm/s, and an e-h diffusion of the micro-LED is less than or equal to 20 cm 2 /s.
1. A micro-LED comprising:
a first component comprising a semiconductor layer stack including an n-side semiconductor layer, an active light emitting layer, and a p-side semiconductor layer, wherein the semiconductor layer stack comprises a III-V semiconductor material; and
a second component comprising a passive or an active matrix integrated circuit within a silicon layer, wherein:
a first dielectric material of the first component is bonded to a second dielectric material of the second component,
first contacts of the first component are aligned with and bonded to second contacts of the second component,
a surface recombination velocity (SRV) of the micro-LED is less than or equal to 3E4 cm/s, and
an electron-hole (e-h) diffusion of the micro-LED is less than or equal to 20 cm 2 /s.
2. The micro-LED of claim 1 , wherein:
the micro-LED is configured to emit red light,
the SRV of the micro-LED is between 1E4 cm/s and 2E4 cm/s, and
the e-h diffusion of the micro-LED is less than 20 cm 2 /s.
3. The micro-LED of claim 1 , wherein:
the micro-LED is configured to emit red light,
a carrier lifetime of the micro-LED is greater than 700 ns,
a non-radiative recombination time within the active light emitting layer is greater than 1 μs, and
the e-h diffusion of the micro-LED is less than 1 cm 2 /s.
4. The micro-LED of claim 1 , wherein:
the micro-LED is configured to emit blue or green light, and
the SRV of the micro-LED is approximately 900 cm/s.
5. The micro-LED of claim 1 , wherein:
the micro-LED is configured to emit blue or green light,
a carrier lifetime of the micro-LED is greater than 700 ns,
a non-radiative recombination time within the active light emitting layer is greater than 1 μs,
the SRV of the micro-LED is less than 1000 cm/s, and
the e-h diffusion of the micro-LED is less than or equal to 2 cm 2 /s.
6. The micro-LED of claim 1 , wherein the e-h diffusion of the micro-LED is less than 1 cm 2 /s.
7. A micro-LED comprising:
a first component comprising a semiconductor layer stack including an n-side semiconductor layer, an active light emitting layer, and a p-side semiconductor layer, wherein the semiconductor layer stack comprises a III-V semiconductor material; and
a second component comprising a passive or an active matrix integrated circuit within a silicon layer, wherein:
a first dielectric material of the first component is bonded to a second dielectric material of the second component,
first contacts of the first component are aligned with and bonded to second contacts of the second component, and
a local electron-hole (e-h) potential barrier within the active light emitting layer confines lateral carriers via indium (In) fluctuations.
8. The micro-LED of claim 7 , wherein:
the micro-LED is configured to emit red light, and
the active light emitting layer comprises AlInGaP.
9. The micro-LED of claim 7 , wherein:
the micro-LED is configured to emit green or blue light, and
the active light emitting layer comprises InGaN.
10. The micro-LED of claim 7 , wherein:
the micro-LED is configured to emit red light, and
a density of states within the active light emitting layer is greater than 60 meV.
11. The micro-LED of claim 7 , wherein:
the micro-LED is configured to emit green light, and
a density of states within the active light emitting layer is between 40 meV and 60 meV.
12. The micro-LED of claim 7 , wherein:
the micro-LED is configured to emit blue light, and
a density of states within the active light emitting layer is between 20 meV and 35 meV.
13. A micro-LED comprising:
a first component comprising a semiconductor layer stack including an n-side semiconductor layer, an active light emitting layer, and a p-side semiconductor layer, wherein the semiconductor layer stack comprises a III-V semiconductor material; and
a second component comprising a passive or an active matrix integrated circuit within a silicon layer, wherein:
a first dielectric material of the first component is bonded to a second dielectric material of the second component,
first contacts of the first component are aligned with and bonded to second contacts of the second component,
a pixel size of the micro-LED is less than 10 μm,
a peak effective internal quantum efficiency (IQE eff ) of the micro-LED is greater than or equal to 10%, and
a surface loss of the micro-LED is less than or equal to 10%.
14. The micro-LED of claim 13 , wherein:
the micro-LED is configured to emit red light, and
the peak IQE eff is greater than 20%.
15. The micro-LED of claim 13 , wherein:
the micro-LED is configured to emit red light, and
the peak IQE eff is greater than 40%.
16. The micro-LED of claim 13 , wherein:
the micro-LED is configured to emit red light, and
the peak IQE eff is greater than 80%.
17. The micro-LED of claim 13 , wherein:
the micro-LED is configured to emit red light,
the peak IQE eff is approximately 10% at a current density between 1 A/cm 2 and 30 A/cm 2 , and
a total wall-plug efficiency (WPE) of the micro-LED is greater than 8% at the current density between 1 A/cm 2 and 30 A/cm 2 .
18. The micro-LED of claim 13 , wherein:
the micro-LED is configured to emit blue light,
the peak IQE eff is greater than 60%,
a surface recombination velocity (SRV) of the micro-LED is approximately 900 cm/s, and
the surface loss of the micro-LED is approximately 7%.
19. The micro-LED of claim 13 , wherein:
the micro-LED is configured to emit blue light,
the peak IQE eff is greater than 60% at a current density between 0.1 A/cm 2 and 20 A/cm 2 , and
a total wall-plug efficiency (WPE) of the micro-LED is greater than 10% at the current density between 0.1 A/cm 2 and 20 A/cm 2 .
20. The micro-LED of claim 13 , wherein:
the micro-LED is configured to emit green light,
the peak IQE eff is greater than 45%,
a surface recombination velocity (SRV) of the micro-LED is approximately 900 cm/s, and
the surface loss of the micro-LED is approximately 10%.
21. The micro-LED of claim 13 , wherein:
the micro-LED is configured to emit green light,
the peak IQE eff is greater than 40% at a current density between 0.7 A/cm 2 and 10 A/cm 2 , and
a total wall-plug efficiency (WPE) of the micro-LED is greater than 5% at the current density between 0.7 A/cm 2 and 10 A/cm 2 .