Memory device and operation method thereof

1. A memory device, comprising:

a temperature sensor suitable for performing a first temperature sensing operation and a second temperature sensing operation for measuring an internal temperature to produce a first result of the first temperature sensing operation and a first result of the second temperature sensing operation, respectively, when the memory device receives a program command, a memory address, and a program data from a controller;

a program component suitable for performing a program operation on the program data based on the first result of the first temperature sensing operation to produce a result of the program operation; and

a temperature comparator suitable for performing a temperature comparison operation for deciding whether the program operation failed, when a difference between the first result of the first temperature sensing operation and the first result of the second temperature sensing operation is greater than or equal to a threshold value.

2. The memory device of claim 1 , further comprising:

a verify component suitable for performing a verification operation with respect to the result of the program operation based on the first result of the first temperature sensing operation to produce a verification result, when the difference between the first result of the first temperature sensing operation and the first result of the second temperature sensing operation is less than the threshold value.

3. The memory device of claim 1 , further comprising:

a verify component suitable for performing a verification operation with respect to the result of the program operation based on the first result of the first temperature sensing operation to produce a verification result, before the temperature comparison operation is performed by the temperature comparator,

wherein the temperature comparator performs the temperature comparison operation, when the verification result produced by the verify component indicates that the program operation passed.

4. The memory device of claim 1 , further comprising:

a bias setter suitable for deciding a program voltage and a verify voltage based on the first result of the first temperature sensing operation.

5. The memory device of claim 4 , wherein the program component performs a program operation based on the first result of the first temperature sensing operation by applying the decided program voltage to a word line.

6. The memory device of claim 1 , wherein the temperature sensor performs the first temperature sensing operation and the second temperature sensing operation again to produce a second result of the first temperature sensing operation and a second result of the second temperature sensing operation, respectively, and

the program component performs the program operation on the program data based on the second result of the first temperature sensing operation, and

the temperature comparator performs the temperature comparison operation based on the second result of the first temperature sensing operation and the second result of the second temperature sensing operation.

7. The memory device of claim 6 , wherein the temperature sensor receives a new memory address from the controller, before the temperature sensor performs the first temperature sensing operation and the second temperature sensing operation again.

8. A memory device comprising:

a plurality of memory blocks;

a temperature sensor suitable for measuring a first temperature;

a program component suitable for performing the program operation for a memory block selected from among the plurality of memory blocks in response to a command from a controller; and

a temperature comparator,

wherein the temperature sensor further measures a second temperature, and

wherein the temperature comparator transfers, when the difference between the first temperature and the second temperature is greater than a threshold value, to the controller, a signal to re-perform the program operation.

9. The memory device of claim 8 , wherein the program component performs the program operation based on the first temperature.

10. The memory device of claim 8 , wherein the temperature sensor measures the second temperature while the memory device performs the program operation.