Method for producing optoelectronic semiconductor devices and optoelectronic semiconductor device
The invention relates to a method for producing a plurality of optoelectronic semiconductor components, comprising the following steps: preparing a plurality of semiconductor chips spaced in a lateral direction to one another; forming a housing body assembly, at least one region of which is arranged between the semiconductor chips; forming a plurality of fillets, each adjoining a semiconductor chip and being bordered in a lateral direction by a side surface of each semiconductor chip and the housing body assembly; and separating the housing body assembly into a plurality of optoelectronic components, each component having at least one semiconductor chip and a portion of the housing body assembly as a housing body, and each semiconductor chip not being covered by material of the housing body on a radiation emission surface of the semiconductor component, which surface is located opposite a mounting surface. The invention also relates to a semiconductor component.
1. An optoelectronic semiconductor device with a mounting surface and a radiation exit surface opposite the mounting surface comprising:
a semiconductor chip which is an optoelectronic semiconductor chip; and
a package body comprising package body material;
wherein
the package body surrounds the semiconductor chip in a lateral direction;
the semiconductor chip is free of the package body material at the radiation exit surface;
a side surface of the semiconductor chip is adjoined by a fillet, the fillet comprising a filler material, the fillet being delimited in the lateral direction by the side surface of the semiconductor chip and the package body;
the fillet is transmissive for the radiation generated or to be detected by the optoelectronic semiconductor device during operation;
the semiconductor chip being free of the filler material at the radiation exit surface; and
a boundary surface between the fillet and the package body has a reflectivity of at least 80%.
2. The optoelectronic semiconductor device according to claim 1 , wherein the fillet extends over the entire circumference of the semiconductor chip and tapers in the direction of the mounting surface.
3. The optoelectronic semiconductor device according to claim 1 , wherein the fillet contains a radiation conversion material.
4. The optoelectronic semiconductor device according to claim 1 , wherein the semiconductor chip is free of package body material at the mounting surface of the optoelectronic semiconductor device.
5. The optoelectronic semiconductor device according to claim 1 , wherein the semiconductor chip comprises two lands for electrical contacting at a front side which faces away from the mounting surface.
6. The optoelectronic semiconductor device according to claim 1 , wherein the semiconductor chip has two lands for electrical contacting at a front side which faces away from the mounting surface wherein said two lands are electrically conductively connected to a first contact and a second contact on the mounting surface, respectively.
7. The optoelectronic semiconductor device according to claim 6 , wherein the lands are connected via vias through the package body.
8. The optoelectronic semiconductor device according to claim 1 , wherein the semiconductor chip has a land for electrical contacting at a front side and the semiconductor chip has a land for electrical contacting at a rear side, wherein the land at the front side is electrically conductively connected to a contact on the mounting surface via a via through the package body.
9. The optoelectronic semiconductor device according to claim 1 , wherein the semiconductor chip extends completely through the package body in a vertical direction which is perpendicular to the lateral direction.
10. An optoelectronic semiconductor device with a mounting surface and a radiation exit surface opposite the mounting surface comprising:
a semiconductor chip which is an optoelectronic semiconductor chip; and
a package body comprising package body material;
wherein
the package body surrounds the semiconductor chip in a lateral direction;
the semiconductor chip is free of the package body material at the radiation exit surface;
a side surface of the semiconductor chip is adjoined by a fillet, the fillet comprising a filler material, the fillet being delimited in the lateral direction by the side surface of the semiconductor chip and the package body;
the fillet is transmissive for the radiation generated or to be detected by the optoelectronic semiconductor device during operation;
the semiconductor chip being free of the filler material at the radiation exit surface; and
a boundary surface between the fillet and the package body comprises convex curvature when viewed from the radiation exit side.
11. The optoelectronic semiconductor device according to claim 10 , wherein the boundary surface between the fillet and the package body is reflective.
12. The optoelectronic semiconductor device according to claim 10 , wherein the package body is formed by a material which is mixed with white pigments.
13. An optoelectronic semiconductor device with a mounting surface and a radiation exit surface opposite the mounting surface comprising:
a semiconductor chip which is an optoelectronic semiconductor chip;
a package body comprising package body material; and
a radiation conversion element;
wherein
the package body surrounds the semiconductor chip in a lateral direction;
the semiconductor chip is free of the package body material at the radiation exit surface;
a side surface of the semiconductor chip is adjoined by a fillet, the fillet comprising a filler material, the fillet being delimited in the lateral direction by the side surface of the semiconductor chip and the package body;
the semiconductor chip being free of the filler material at the radiation exit surface; and
the radiation conversion element is arranged on a side of the semiconductor device opposite the mounting surface.
14. The optoelectronic semiconductor device according to claim 13 ,
wherein the radiation conversion element comprises a radiation conversion material that at least partly converts a primary radiation generated in the semiconductor chip with a first peak wavelength during operation into a secondary radiation with a second peak wavelength different from the first peak wavelength.
15. The optoelectronic semiconductor device according to claim 13 ,
wherein the fillet is transmissive for the radiation generated or to be detected by the semiconductor device during operation.
16. The optoelectronic semiconductor device according to claim 15 ,
wherein the fillet comprises a radiation conversion material.
17. The optoelectronic semiconductor device according to claim 15 ,
wherein the fillet is free of a radiation conversion material.
18. The optoelectronic semiconductor device according to claim 13 , wherein the fillet has a reflectivity of at least 80%.