Spin-orbit torque MRAM structure and manufacture thereof
Embodiments of the present disclosure generally include spin-orbit torque magnetoresistive random-access memory (SOT-MRAM) devices and methods of manufacture thereof. The SOT-MRAM devices described herein include an SOT layer laterally aligned with a magnetic tunnel junction (MTJ) stack and formed over a trench in an interconnect. Thus, the presence of the SOT layer outside the area of the MTJ stack is eliminated, and electric current passes from the interconnect to the SOT layer by SOT-interconnect overlap. The devices and methods described herein reduce the formation of shunting current and enable the MTJ to self-align with the SOT layer in a single etching process.
1. A magnetoresistive random-access memory (MRAM) device structure, comprising:
a bottom electrode having a gap therein, the gap separating a first structure and a second structure of the bottom electrode;
a conductive channel formed over the gap and having an area overlapping each of the first and the second structures of the bottom electrode; and
a magnetic tunnel junction (MTJ) pillar structure disposed over the conductive channel, the MTJ pillar having a sidewall aligned with a sidewall of the conductive channel;
a free layer disposed on the conductive channel and having a free magnetization;
a tunneling barrier layer disposed over the free layer; and
a reference layer disposed over the tunneling barrier layer and having a fixed magnetic moment;
an encapsulation layer formed around the MTJ pillar and over the conductive channel, the encapsulation layer comprising silicon nitride (SiN), silicon carbonitride (SiCN), silicon oxynitride (SiON), or aluminum oxide (Al 2 O 3 ); and
a dielectric fill layer formed over the encapsulation layer and having a top surface coplanar with a top surface of the MTJ pillar.
2. The MRAM device structure of claim 1 , wherein the gap is filled with an oxide material.
3. The MRAM device structure of claim 2 , wherein the gap is filled with a material comprising silicon dioxide.
4. The MRAM device structure of claim 1 , wherein the conductive channel overlaps each of the first and the second structures of the bottom electrode by a distance between about 1 Angstrom and 100 Angstroms.
5. The MRAM device structure of claim 1 , wherein the dielectric fill layer comprises a low temperature oxide, nitride, or combination thereof.
6. The MRAM device structure of claim 1 , further comprising:
a top electrode formed over the MTJ pillar opposite of the conductive channel.
7. A magnetoresistive random-access memory (MRAM) device structure, comprising:
a bottom electrode having a gap therein, the gap separating a first conductive structure and a second conductive structure of the bottom electrode;
a spin-orbit torque (SOT) layer formed over the gap and having an area overlapping each of the first and the second conductive structures of the bottom electrode;
a magnetic tunnel junction (MTJ) pillar structure disposed over the SOT layer, the MTJ pillar having lateral dimensions substantially equal to the SOT layer, the MTJ pillar further comprising:
a free layer disposed on the SOT layer and having a free magnetization;
a tunneling barrier layer disposed over the free layer; and
a reference layer disposed over the tunneling barrier layer and having a fixed magnetic moment; and
a top electrode disposed over the MTJ pillar and opposite of the SOT layer;
an encapsulation layer formed around the MTJ pillar and over the SOT layer, the encapsulation layer comprising silicon nitride (SiN), silicon carbonitride (SiCN), silicon oxynitride (SiON), or aluminum oxide (Al 2 O 3 ); and
a dielectric fill layer formed over the encapsulation layer and having a top surface coplanar with a top surface of the MTJ pillar, the dielectric fill layer comprising a low temperature oxide, nitride, or combination thereof.
8. The MRAM device structure of claim 7 , wherein the gap is filled with an oxide material.
9. The MRAM device structure of claim 8 , wherein the gap is filled with a material comprising silicon dioxide.
10. The MRAM device structure of claim 7 , wherein the SOT layer overlaps each of the first and the second conductive structures of the bottom electrode by a distance between about 1 Angstrom and 100 Angstroms.