Light-emitting device with reflective layer
A light-emitting device comprises a semiconductor structure comprising a surface and a side wall inclined to the surface, wherein the semiconductor structure comprises a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, and the second semiconductor layer comprises a first edge and a first area; a reflective layer located on the second semiconductor layer and comprising an outer edge and a second area, wherein a distance between the first edge and the outer edge is greater than 0 μm and is not greater than 10 μm; and a first contact part comprising a metal formed on the reflective layer and the first semiconductor layer, wherein the first contact part comprises a first periphery comprising a first periphery length larger than a periphery length of the active layer from a top-view of the light-emitting device.
1. A light-emitting device, comprising:
a semiconductor structure comprising a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the second semiconductor layer comprises a first edge;
a first insulating structure formed on the second semiconductor layer and contacting the first edge of the second semiconductor layer, comprising an opening on the second semiconductor layer;
a reflective structure located on the opening of the first insulating structure;
and
a second insulating structure formed on the first insulating structure and the reflective structure, and comprising a first insulating opening to expose the first semiconductor layer and a second insulating opening to expose the reflective structure,
wherein the reflective structure is interposed between the first insulating structure and the second insulating structure.
2. The light-emitting device of claim 1 , further comprising a via passing through the second semiconductor layer and the active layer to expose the first semiconductor layer.
3. The light-emitting device of claim 2 , wherein the second insulating structure extends into the via to contact the first semiconductor layer.
4. The light-emitting device of claim 1 , wherein the reflective structure comprises:
a reflective layer; and
a barrier layer formed on the reflective layer, and
wherein the reflective layer or the barrier layer comprises an outer edge, and wherein the reflective layer and the barrier layer do not exceed the first edge of the second semiconductor layer, or a distance between the first edge and the outer edge is greater than 0 μm and is not greater than 10 μm.
5. The light-emitting device of claim 1 , wherein the reflective structure comprises:
a reflective layer; and
a barrier layer formed on the reflective layer, and
wherein the reflective layer or the barrier layer covers a part of the first insulating structure.
6. The light-emitting device of claim 1 , wherein the first insulating structure and the second insulating structure comprise same material.
7. The light-emitting device of claim 1 , further comprising a transparent conductive layer located between the semiconductor structure and the reflective structure.
8. The light-emitting device of claim 1 , wherein the reflective structure comprises:
a reflective layer; and
a barrier layer formed on the reflective layer, and
wherein the barrier layer surrounds the reflective layer.
9. The light-emitting device of claim 1 , further comprising:
a first contact part formed on the reflective structure and electrically connected to the first semiconductor layer; and
a second contact part formed on the reflective structure and electrically connected to the second semiconductor layer.
10. The light-emitting device of claim 9 , wherein the first contact part comprises a first periphery comprising a first periphery length larger than a periphery length of the active layer from a top-view of the light-emitting device.
11. The light-emitting device of claim 9 , wherein the first contact part contacts the first semiconductor layer through the first insulating opening of the second insulating structure.
12. The light-emitting device of claim 9 , wherein the second contact part is surrounded by the first contact part from a top-view of the light-emitting device.
13. The light-emitting device of claim 9 , further comprising a third insulating structure comprising a first opening to expose the first contact part and a second opening to expose the second contact part; a first pad formed on the first opening; and a second pad formed on the second opening.
14. A light-emitting device, comprising:
a semiconductor structure comprising a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the second semiconductor layer comprises a first edge;
a reflective layer and a barrier layer located on the second semiconductor layer, wherein the reflective layer or the barrier layer comprises an outer edge, and a distance between the first edge and the outer edge is greater than 0 μm and is not greater than 10 μm;
a second insulating structure covering the barrier layer and comprising a first insulating opening to expose the first semiconductor layer and a second insulating opening to expose the barrier layer; and
a first contact part comprising a metal formed on the barrier layer and the first semiconductor layer, wherein the first contact part is electrically connected to the first semiconductor layer through the first insulating opening.
15. The light-emitting device of claim 14 , further comprising a transparent conductive layer located between the semiconductor structure and the reflective layer.
16. The light-emitting device of claim 14 , wherein the barrier layer surrounds the reflective layer.
17. The light-emitting device of claim 14 , wherein the first contact part comprises a first periphery comprising a first periphery length larger than a periphery length of the active layer from a top-view of the light-emitting device.
18. The light-emitting device of claim 14 , further comprising a second contact part formed on the second insulating opening and electrically connected to the second semiconductor layer through the reflective layer and the barrier layer.
19. The light-emitting device of claim 18 , further comprising a third insulating structure comprising a first opening to expose the first contact part and a second opening to expose the second contact part; a first pad formed on the first opening; and a second pad formed on the second opening.
20. A light-emitting device, comprising:
a semiconductor structure comprising a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the second semiconductor layer comprises a first edge;
a first insulating structure formed on the second semiconductor layer and contacting the first edge of the second semiconductor layer, comprising an opening on the second semiconductor layer;
a reflective layer located on the opening of the first insulating structure;
a barrier layer covering the reflective layer and the first insulating structure; and
a second insulating structure contacting the first insulating structure, covering the barrier layer, and comprising a first insulating opening to expose the first semiconductor layer and a second insulating opening to expose the barrier layer,
wherein the reflective layer or the barrier layer comprises an outer edge, and a distance between the first edge and the outer edge is greater than 0 μm and is not greater than 10 μm.