Gate all around vacuum channel transistor
A vacuum channel transistor having a vertical gate-all-around (GAA) architecture provides high performance for high-frequency applications, and features a small footprint compared with existing planar devices. The GAA vacuum channel transistor features stacked, tapered source and drain regions that are formed by notching a doped silicon pillar using a lateral oxidation process. A temporary support structure is provided for the pillar during formation of the vacuum channel. Performance of the GAA vacuum channel transistor can be tuned by replacing air in the channel with other gases such as helium, neon, or argon. A threshold voltage of the GAA vacuum channel transistor can be adjusted by altering dopant concentrations of the silicon pillar from which the source and drain regions are formed.
1. A device, comprising:
a substrate;
a first semiconductor pillar structure oriented in a first direction, the first semiconductor structure having a first tapered end pointing away from the substrate;
a second semiconductor pillar structure oriented in the first direction and spaced apart from the first semiconductor pillar structure, the second semiconductor structure having a second tapered end pointing toward the substrate;
a gap region between the first semiconductor pillar structure and the second semiconductor pillar structure; and
a gate structure adjacent to the gap region in a second direction transverse to the first direction.
2. The device of claim 1 , wherein the first and second tapered ends face one another and are separated by the gap region.
3. The device of claim 1 , wherein the gate structure surrounds the gap region.
4. The device of claim 3 , wherein the gate structure surrounds at least a portion of each of the first semiconductor pillar structure and the second semiconductor pillar structure.
5. The device of claim 1 , wherein the first semiconductor pillar structure has a first dimension in the second direction, the second semiconductor pillar structure has a second dimension in the second direction, and the first dimension is greater than the second dimension.
6. The device of claim 1 , further comprising a first dielectric layer that surrounds the first semiconductor pillar structure, the gate region and the second semiconductor pillar structure in the second direction.
7. The device of claim 6 , further comprising a second dielectric layer that surrounds only the second semiconductor pillar structure in the second direction, the second dielectric layer positioned between the first dielectric layer and the second semiconductor pillar structure.
8. The device of claim 7 , further comprising a first conductive structure contacting a first portion of the second semiconductor pillar structure; and
wherein the second dielectric layer surrounds a second portion of the second semiconductor pillar structure, the second portion being closer to the gap region than the first portion.
9. The device of claim 1 , wherein the first semiconductor pillar structure and the second semiconductor pillar structure are doped with a same conductivity type.
10. The device of claim 1 , wherein the substrate includes a doped region, the first semiconductor pillar structure extends from the doped region, and the first semiconductor pillar structure is doped with a same conductivity type as the doped region.
11. The device of claim 10 , further comprising a second conductive structure contacting the doped region.
12. A device, comprising:
a substrate;
a vertical stack over the substrate, the vertical stack including:
a first portion having a first tapered end; and
a second portion over the first portion and having a second tapered end that faces the first tapered end; and
a gate structure laterally adjacent to the first tapered end and the second tapered end.
13. The device of claim 12 , wherein the first tapered end and the second tapered end are separated by a gap.
14. The device of claim 12 , comprising an oxide spacer spaced apart from the second portion, wherein the second tapered end is spaced apart from the oxide spacer.
15. The device of claim 14 , further comprising a conductive contact structure between the oxide spacer and the second portion.
16. The device of claim 12 , wherein the gate structure is around the vertical stack.
17. The device of claim 12 , wherein the gate surrounds the first tapered end and the second tapered end.
18. A device, comprising:
a substrate;
a source structure over the substrate, the source structure having a first point;
a drain structure over the source structure, the drain structure having a second point spaced apart from the first point by a first gap;
an insulator layer surrounding the drain structure and overlapping the source structure; and
a gate surround the first gap.
19. The device of claim 18 , further comprising a gas that fills the first gap.
20. The device of claim 19 , wherein the gas includes one or more of argon, helium, neon, oxygen and nitrogen.