Method and device for electrical overstress and electrostatic discharge protection
A semiconductor device is protected from electrical overstress (EOS) and electro-static discharge (ESD) events by a series protection circuit electrically coupled in series along the transmission line between a signal source and a load. The series protection circuit includes a first field-effect transistor (FET) electrically coupled in series between the signal source and load. A parallel protection circuit is electrically coupled between the transmission line and a ground node. The parallel protection circuit can include a transient-voltage-suppression (TVS) diode.
1. A semiconductor device, comprising:
a transmission line;
a junction field-effect transistor (JFET) coupled in series with the transmission line, wherein a gate terminal of the JFET is electrically coupled to the transmission line;
a resistor coupled in series with the transmission line between the JFET and the gate terminal of the JFET, wherein the resistor includes a fixed resistance rating or value; and
a parallel protection circuit electrically coupled between the transmission line and a ground node.
2. The semiconductor device of claim 1 , wherein a conduction terminal of the JFET is directly electrically coupled to a first terminal of the resistor and a gate terminal of the JFET is directly electrically coupled to a second terminal of the resistor.
3. The semiconductor device of claim 1 , wherein the JFET and parallel protection circuit are disposed within a single semiconductor package.
4. The semiconductor device of claim 1 , wherein the parallel protection circuit includes a transient-voltage-suppression (TVS) diode.
5. The semiconductor device of claim 1 , wherein the JFET, resistor, and transmission line are coupled in series between a source and a load.
6. The semiconductor device of claim 1 , wherein the gate terminal of the JFET is directly coupled to the parallel protection circuit.
7. A semiconductor device, comprising:
a junction field-effect transistor (JFET); and
a resistor comprising a first terminal of the resistor coupled to a conduction terminal of the JFET and a second terminal of the resistor coupled to a gate terminal of the JFET, wherein the resistor includes a fixed resistance rating or value.
8. The semiconductor device of claim 7 , wherein the conduction terminal of the JFET is directly electrically coupled to the first terminal of the resistor and the gate terminal of the JFET is directly electrically coupled to the second terminal of the resistor.
9. The semiconductor device of claim 7 , wherein the JFET and resistor are coupled in series between a source and a load.
10. The semiconductor device of claim 7 , further including a parallel protection circuit coupled to the JFET.
11. The semiconductor device of claim 10 , wherein the JFET and parallel protection circuit are within a single semiconductor package.
12. The semiconductor device of claim 10 , wherein the parallel protection circuit includes a transient-voltage-suppression (TVS) diode.
13. The semiconductor device of claim 10 , wherein the gate terminal of the JFET is directly coupled to the parallel protection circuit.
14. A method of making a semiconductor device, comprising:
providing a transmission line;
coupling a junction field-effect transistor (JFET) in series with the transmission line;
coupling a gate terminal of the JFET to the transmission line; and
coupling a resistor in series with the transmission line between the JFET and the gate terminal of the JFET, wherein the resistor includes a fixed resistance rating or value.
15. The method of claim 14 , wherein a conduction terminal of the JFET is directly electrically coupled to a first terminal of the resistor and the gate terminal of the JFET is directly electrically coupled to a second terminal of the resistor.
16. The method of claim 14 , further including coupling the JFET and resistor in series between a source and a load.
17. The method of claim 14 , further including coupling a parallel protection circuit to the JFET.
18. The method of claim 17 , further including disposing the JFET and parallel protection circuit within a single semiconductor package.
19. The method of claim 17 , wherein the parallel protection circuit includes a transient-voltage-suppression (TVS) diode.
20. The method of claim 17 , wherein the gate terminal of the JFET is directly coupled to the parallel protection circuit.