Impedance matching network and method with reduced memory requirements

1. An impedance matching network comprising:

an RF input configured to operably couple to an RF source;

an RF output configured to operably couple to a plasma chamber;

a first reactance element configured to provide a variable first reactance element position, the first reactance element position controlling the total reactance provided by the first reactance element;

a second reactance element configured to provide a variable second reactance element position, the second reactance element position controlling the total reactance provided by the second reactance element;

a control circuit configured to carry out a matching process of:

detecting, by a sensor, a value related to the plasma chamber or the matching network;

determining a first parameter of the matching network based on the detected value;

determining first two-port parameters from a first one-dimensional array that corresponds to a first portion of the matching network using the first reactance element position;

determining second two-port parameters from a second one-dimensional array that corresponds to a second portion of the matching network using the second reactance element position, the second portion of the matching network being distinct from the first portion;

calculating an output parameter of the RF output based on the first parameter, the first two-port parameters, and the second two-port parameters;

determining a new first reactance element position and a new second reactance element position from a match position table using the calculated output parameter; and

altering the first reactance element to the new first reactance element position, and altering the second reactance element to the new second reactance element position to reduce a reflected power.

2. The matching network of claim 1 :

wherein the detected value comprises at least one of a voltage, a current, or a phase at the RF input; and

wherein the first parameter is an input impedance at an RF input of the impedance matching network.

3. The matching network of claim 1 wherein each one-dimensional array comprises, for each potential reactance element position, corresponding two-port parameters.

4. The matching network of claim 1 wherein each of the first reactance element and the second reactance element is a variable capacitor whose total reactance is a total capacitance, or each is a variable inductor whose total reactance is a total inductance.

5. The matching network of claim 1 wherein each of the first reactance element and the second reactance element is an electronically variable capacitor (EVC), each EVC comprising discrete capacitors configured to switch in and out to enable the EVC to provide the variable first reactance element position or the variable second reactance element position.

6. The matching network of claim 1 wherein the match position table comprises, for each of a plurality of output parameters, corresponding new first and second reactance element positions that would cause a desired input parameter at the RF input.

7. The matching network of claim 6 wherein the corresponding new first and second reactance element positions that would cause the desired input parameter is determined by:

calculating an input impedance at the RF input for each of the plurality of output parameters using the two-port parameters; and

calculating a reflection value for each calculated input impedance, the desired input parameter being the lowest reflection value.

8. The matching network of claim 7 wherein the reflection value is a reflection coefficient at the RF input of the matching network.

9. The matching network of claim 1 wherein the matching network comprises more than two variable reactance elements.

10. A semiconductor processing tool comprising:

a plasma chamber configured to deposit a material onto a substrate or etch a material from the substrate; and

an impedance matching network operably coupled to the plasma chamber, the matching network comprising:

an RF input configured to operably couple to an RF source;

an RF output configured to operably couple to the plasma chamber;

a first reactance element configured to provide a variable first reactance element position, the first reactance element position controlling the total reactance provided by the first reactance element;

a second reactance element configured to provide a variable second reactance element position, the second reactance element position controlling the total reactance provided by the second reactance element;

a control circuit configured to carry out a matching process of:

detecting, by a sensor, a value related to the plasma chamber or the matching network;

determining a first parameter of the matching network based on the detected value;

determining first two-port parameters from a first one-dimensional array that corresponds to a first portion of the matching network using the first reactance element position;

determining second two-port parameters from a second one-dimensional array that corresponds to a second portion of the matching network using the second reactance element position, the second portion of the matching network being distinct from the first portion;

calculating an output parameter of the RF output based on the first parameter, the first two-port parameters, and the second two-port parameters;

determining a new first reactance element position and a new second reactance element position from a match position table using the calculated output parameter; and

altering the first reactance element to the new first reactance element position, and altering the second reactance element to the new second reactance element position to reduce a reflected power.

11. A method of matching an impedance, the method comprising:

a) operably coupling a radio frequency (RF) input of a matching network to an RF source, and operably coupling an RF output of the matching network to a plasma chamber, wherein the matching network comprises:

i) a first reactance element configured to provide a variable first reactance element position, the first reactance element position controlling the total reactance provided by the first reactance element; and

ii) a second reactance element configured to provide a variable second reactance element position, the second reactance element position controlling the total reactance provided by the second reactance element;

b) detecting, by a sensor, a value related to the plasma chamber or the matching network;

c) determining a first parameter of the matching network based on the detected value;

d) determining first two-port parameters from a first one-dimensional array that corresponds to a first portion of the matching network using the first reactance element position;

e) determining second two-port parameters from a second one-dimensional array that corresponds to a second portion of the matching network using the second reactance element position, the second portion of the matching network being distinct from the first portion;

f) calculating an output parameter of the RF output based on the first parameter, the first two-port parameters, and the second two-port parameters;

g) determining a new first reactance element position and a new second reactance element position from a match position table using the calculated output parameter; and

h) altering the first reactance element to the new first reactance element position, and altering the second reactance element to the new second reactance element position to reduce a reflected power.

12. The method of claim 11 :

wherein the detected value comprises at least one of a voltage, a current, or a phase at the RF input; and

wherein the first parameter is an input impedance at an RF input of the impedance matching network.

13. The method of claim 11 wherein each one-dimensional array comprises, for each potential reactance element position, corresponding two-port parameters.

14. The method of claim 11 wherein each of the first reactance element and the second reactance element is a variable capacitor whose total reactance is a total capacitance, or each is a variable inductor whose total reactance is a total inductance.

15. The method of claim 11 wherein each of the first reactance element and the second reactance element is an electronically variable capacitor (EVC), each EVC comprising discrete capacitors configured to switch in and out to enable the EVC to provide the variable first reactance element position or the variable second reactance element position.

16. The method of claim 11 wherein the match position table comprises, for each of a plurality of output parameters, corresponding new first and second reactance element positions that would cause a desired input parameter at the RF input.

17. The method of claim 11 wherein the corresponding new first and second reactance element positions that would cause the desired input parameter is determined by:

calculating an input impedance at the RF input for each of the plurality of output parameters using the two-port parameters; and

calculating a reflection value for each calculated input impedance, the desired input parameter being the lowest reflection value.

18. The method of claim 17 wherein the reflection value is a reflection coefficient at the RF input of the matching network.

19. The method of claim 11 wherein the matching network comprises more than two variable reactance elements.

20. A method of manufacturing a semiconductor, the method comprising:

placing a substrate in a plasma chamber configured to deposit a material layer onto the substrate or etch a material layer from the substrate; and

operably coupling a radio frequency (RF) input of a matching network to an RF source, and operably coupling an RF output of the matching network to the plasma chamber, wherein the matching network comprises:

a first reactance element configured to provide a variable first reactance element position, the first reactance element position controlling the total reactance provided by the first reactance element; and

a second reactance element configured to provide a variable second reactance element position, the second reactance element position controlling the total reactance provided by the second reactance element;

detecting, by a sensor, a value related to the plasma chamber or the matching network;

determining a first parameter of the matching network based on the detected value;

determining first two-port parameters from a first one-dimensional array that corresponds to a first portion of the matching network using the first reactance element position;

determining second two-port parameters from a second one-dimensional array that corresponds to a second portion of the matching network using the second reactance element position, the second portion of the matching network being distinct from the first portion;

calculating an output parameter of the RF output based on the first parameter, the first two-port parameters, and the second two-port parameters;

determining a new first reactance element position and a new second reactance element position from a match position table using the calculated output parameter; and

altering the first reactance element to the new first reactance element position, and altering the second reactance element to the new second reactance element position to reduce a reflected power.