Ferroelectric random-access memory with ROMFUSE area having redundant configuration wordlines
Embodiments of the present disclosure relate to an architecture for random access memory (RAM) circuit configurations. For example, certain embodiments relate to a ferroelectric RAM (FRAM) read only memory (ROM) wordline architecture. A method for power-on reset of a memory can include powering on the memory. The method can also include reading a first flag in a first bit of a first configuration wordline of the memory, wherein the first configuration wordline is one of a plurality of redundant configuration wordlines. The method can further include reading, when the first flag indicates the first configuration wordline is valid, a predetermined number of bytes of the wordline. The method can additionally include configuring operations of the memory based on the predetermined number of bytes, when the first flag indicates the first configuration wordline is valid.
1. A memory device, the device comprising:
a controller configured to control operation of the memory; and
the memory comprising a plurality of redundant configuration wordlines,
wherein the controller is configured to
read a first flag in a first bit of a first redundant configuration wordline of the memory, wherein the first redundant configuration wordline is one of the plurality of redundant configuration wordlines;
read, when the first flag indicates the first redundant configuration wordline is valid for reading a remainder of the first redundant configuration wordline, a predetermined number of bytes of the first redundant configuration wordline; and
configure operations of the memory based on the predetermined number of bytes, when the first flag indicates the first redundant configuration wordline is valid, wherein the operations comprise enabling or disabling an option regarding the remainder of the first redundant configuration wordline.
2. The memory device of claim 1 , wherein the controller is further configured to read, when the first flag indicates the first redundant configuration wordline is invalid, a second flag in a first bit of a second redundant configuration wordline of the memory, wherein the second redundant configuration wordline is also one of the plurality of redundant configuration wordlines.
3. The memory device of claim 2 , wherein the controller is further configured to read, when the second flag indicates the second redundant configuration wordline is valid, a predetermined number of bytes of the second redundant configuration wordline; and
configure operations of the memory based on the predetermined number of bytes, when the second flag indicates the second redundant configuration wordline is valid.
4. The memory device of claim 3 , wherein the controller is further configured to read, when the second flag indicates the second redundant configuration wordline is invalid, a third flag in a first bit of a third redundant configuration wordline of the memory, wherein the third redundant configuration wordline is also one of the plurality of redundant configuration wordlines.
5. The memory device of claim 1 , wherein the controller is configured to read a plurality of flags following the first flag consecutively until a flag indicating that a corresponding redundant configuration wordline is valid.
6. The memory device of claim 1 , wherein the first redundant configuration wordline comprises a ROMFUSE wordline.
7. The memory device of claim 1 , wherein the controller is configured to read the predetermined number of bytes by reading four bytes at a time, five times.
8. A memory device, the device comprising:
a controller configured to control operation of the memory; and
the memory comprising a plurality of redundant configuration wordlines,
wherein the controller is configured to
read a first flag in a first bit of a first redundant configuration wordline of the memory, wherein the first redundant configuration wordline is one of the plurality of redundant configuration wordlines;
read, when the first flag indicates the first redundant configuration wordline is valid, a predetermined number of bytes of the first redundant configuration wordline; and
configure operations of the memory based on the predetermined number of bytes, when the first flag indicates the first redundant configuration wordline is valid,
wherein the predetermined number of bytes comprise 1 bit for the flag, 3 bits for device user configuration, 3 bits for logic wordline enable ins delay option, 88 bits for analog and array design option, 64 bits for redundancy content addressable memory, and 1 bit designated as unused.
9. The memory device of claim 1 , wherein the memory comprises a plurality of sectors each having a plurality of sub-arrays, wherein each sub-array comprises a respective one of the plurality of redundant configuration wordlines.
10. The memory device of claim 1 , wherein the memory comprises one of the plurality of redundant configuration wordlines per 512 wordlines.
11. A memory controller, comprising:
a digital logic circuit configured to control operation of a memory,
wherein the digital logic circuit is configured to
read a first flag in a first bit of a first redundant configuration wordline of the memory, wherein the first redundant configuration wordline is one of the plurality of redundant configuration wordlines;
read, when the first flag indicates the first redundant configuration wordline is valid for reading a remainder of the first redundant configuration wordline, a predetermined number of bytes of the first redundant configuration wordline; and
configure operations of the memory based on the predetermined number of bytes, when the first flag indicates the first redundant configuration wordline is valid, wherein the operations comprise enabling or disabling an option regarding the remainder of the first redundant configuration wordline.
12. The memory controller of claim 11 , wherein the digital logic circuit is further configured to read, when the first flag indicates the first redundant configuration wordline is invalid, a second flag in a first bit of a second redundant configuration wordline of the memory, wherein the second redundant configuration wordline is also one of the plurality of redundant configuration wordlines.
13. The memory controller of claim 12 , wherein the digital logic circuit is further configured to read, when the second flag indicates the second redundant configuration wordline is valid, a predetermined number of bytes of the second redundant configuration wordline; and
configure operations of the memory based on the predetermined number of bytes, when the second flag indicates the first redundant configuration wordline is valid.
14. The memory controller of claim 13 , wherein the digital logic circuit is further configured to read, when the second flag indicates the second redundant configuration wordline is invalid, a third flag in a first bit of a third redundant configuration wordline of the memory, wherein the third redundant configuration wordline is also one of the plurality of redundant configuration wordlines.
15. The memory controller of claim 11 , wherein the digital logic circuit is configured to read a plurality of flags following the first flag consecutively until a flag indicating that a corresponding redundant configuration wordline is valid.
16. The memory controller of claim 11 , wherein the first redundant configuration wordline comprises a ROMFUSE wordline.
17. The memory controller of claim 11 , wherein the digital logic circuit is configured to read the predetermined number of bytes by reading four bytes at a time, five times.
18. A memory controller, comprising:
a digital logic circuit configured to control operation of a memory,
wherein the digital logic circuit is configured to
read a first flag in a first bit of a first redundant configuration wordline of the memory, wherein the first redundant configuration wordline is one of the plurality of redundant configuration wordlines;
read, when the first flag indicates the first redundant configuration wordline is valid, a predetermined number of bytes of the first redundant configuration wordline; and
configure operations of the memory based on the predetermined number of bytes, when the first flag indicates the first redundant configuration wordline is valid,
wherein the predetermined number of bytes comprise 1 bit for the flag, 3 bits for device user configuration, 3 bits for logic wordline enable Ins delay option, 88 bits for analog and array design option, 64 bits for redundancy content addressable memory, and 1 bit designated as unused.
19. The memory device of claim 1 , wherein the operations of the memory comprise identifying content as addressable or unaddressable.
20. The memory device of claim 1 , wherein the operations are identified with ROMFUSE data.
21. The memory device of claim 1 , wherein the operations are controlled by a device user configuration.
22. The memory device of claim 1 , wherein the operations comprise enabling a delay option.
23. The memory controller of claim 11 , wherein the operations of the memory comprise identifying content as addressable or unaddressable.
24. The memory controller of claim 11 , wherein the operations are identified with ROMFUSE data.
25. The memory controller of claim 11 , wherein the operations are controlled by a device user configuration.
26. The memory controller of claim 11 , wherein the operations comprise enabling a delay option.