IP Library Granted Patent US 10,985,295
Granted Patent B2
US 10,985,295 · App. 16/891,670 · Granted Apr 20, 2021

Light-emitting device

Inventors: Chao-Hsing Chen (Hsinchu, TW); Jia-Kuen Wang (Hsinchu, TW); Tzu-Yao Tseng (Hsinchu, TW); Bo-Jiun Hu (Hsinchu, TW); Tsung-Hsun Chiang (Hsinchu, TW); Wen-Hung Chuang (Hsinchu, TW); Kuan-Yi Lee (Hsinchu, TW); Yu-Ling Lin (Hsinchu, TW); Chien-Fu Shen (Hsinchu, TW); Tsun-Kai Ko (Hsinchu, TW)
Assignee: EPISTAR CORPORATION
H01L33/46H01L33/382H01L33/38H01L33/405
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Quick Facts
Patent No.
US 10,985,295
App. No.
16/891,670
Granted
Apr 20, 2021
Kind
B2
Abstract

A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first contact layer on the first semiconductor layer; a second contact layer on the second semiconductor layer, wherein the first contact layer and the second contact layer comprise a metal material other than gold (Au) or copper (Cu); a first pad on the semiconductor stack; a second pad on the semiconductor stack.

Claims (25)

1. A light-emitting device, comprising:

a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer;

one or multiple vias penetrating the active layer and the second semiconductor layer to expose the first semiconductor layer;

a first contact layer on the first semiconductor layer and electrically connected to the first semiconductor layer by the one or multiple vias;

a second contact layer on the second semiconductor layer, wherein the first contact layer and the second contact layer comprise a metal material other than gold (Au) or copper (Cu);

a first pad on the semiconductor stack and connected to the first contact layer; and

a second pad on the semiconductor stack and connected to the second contact layer, wherein the second pad is separated from the first pad with a distance to define a region between the first pad and the second pad on the semiconductor stack.

2. The light-emitting device of claim 1 , wherein the first contact layer surrounds the second contact layer in a top view of the light-emitting device.

3. The light-emitting device of claim 1 , wherein the first pad comprises a first opening, the second pad comprises a second opening, and the one or the multiple vias are overlapped with the first opening and the second opening.

4. The light-emitting device of claim 3 , wherein the one or the multiple vias comprise an opening comprising a maximum width smaller than a maximum width of the first opening or a maximum width of the second opening.

5. The light-emitting device of claim 1 , wherein the one or the multiple vias are formed at the region between the first pad and the second pad.

6. The light-emitting device of claim 1 , wherein the first pad comprises a first side and a plurality of first recesses extending from the first side in a direction away from the second pad and/or the second pad comprises a second side and a plurality of second recesses extending from the second side in a direction away from the first pad.

7. The light-emitting device of claim 6 , wherein the plurality of first recesses is aligned with the plurality of second recesses.

8. The light-emitting device of claim 6 , wherein the plurality of first recesses is offset from the plurality of second recesses.

9. The light-emitting device of claim 6 , wherein multiple vias are respectively formed on the plurality of first recesses of the first pad and the plurality of second recesses of the second pad.

10. The light-emitting device of claim 1 , further comprising a first insulating layer covering a sidewall of the active layer and the second semiconductor layer, wherein the first insulating layer comprises a first insulating opening exposing the second semiconductor layer.

11. The light-emitting device of claim 10 , further comprising a transparent conductive layer formed in the first insulating opening, wherein an outer edge of the transparent conductive layer is separated from the first insulating layer with a distance.

12. The light-emitting device of claim 10 , further comprising a reflective layer formed on the first insulating opening, and a barrier layer on the reflective layer.

13. The light-emitting device of claim 12 , further comprising a second insulating layer on the barrier layer, wherein the second insulating layer comprises a second insulating opening exposing the barrier layer.

14. The light-emitting device of claim 13 , further comprising a third insulating layer on the semiconductor stack, where the third insulating layer comprises a third insulating opening formed on the second semiconductor layer.

15. The light-emitting device of claim 14 , wherein the third insulating opening exposes the second contact layer.

16. The light-emitting device of claim 1 , wherein the first contact layer contacts the one or the multiple vias.

17. The light-emitting device of claim 1 , wherein the first pad and/or the second pad are formed at positions other than positions of the one or the multiple vias.

18. The light-emitting device of claim 1 , wherein at least one of the first pad and the second pad comprises a lower portion, wherein the lower portion comprises multiple layers, each of the multiple layers comprises metal material other than gold (Au) or copper (Cu).

19. The light-emitting device of claim 1 , wherein the first contact layer, the second contact layer, the first pad and the second pad comprise aluminum (Al).

Assignments (2)
CHANGE OF NAME Recorded Feb 18, 2026
From: EPISTAR CORPORATION
To: ENNOSTAR CORPORATION
Reel/Frame 075171/0402 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 3, 2020
From: CHEN, CHAO-HSING; WANG, JIA-KUEN; TSENG, TZU-YAO; HU, BO-JIUN; CHIANG, TSUNG-HSUN; CHUANG, WEN-HUNG; LEE, KUAN-YI; LIN, YU-LING; SHEN, CHIEN-FU; KO, TSUN-KAI
To: EPISTAR CORPORATION
Reel/Frame 052827/0119 →