PHOTOSENSITIVE RESIN COMPOSITION, POLYIMIDE PRODUCTION METHOD, AND SEMICONDUCTOR DEVICE
A semiconductor device having a copper wiring and an insulating layer provided on the copper wiring, where after storage in air with a humidity of 5% for 168 hours at 150° C., the area of void portion of the copper wiring is 10% or less at the copper wiring surface in contact with the insulating layer. The insulating layer contains at least one polyimide that has (i) a structure derived from 4,4′-oxydiphthalic acid dianhydride and a structure derived from 4,4′-diaminodiphenyl ether; or (ii) a structure derived from 3,3′4,4′-biphenyltetracarboxylic acid dianhydride and a structure derived from 4,4′-diaminodiphenyl ether; or (iii) a structure derived from 4,4′-oxydiphthalic acid dianhydride and a structure derived from 2,2′-dimethyl-4,4′-diaminobiphenyl.
1 . A semiconductor device comprising copper wiring and an insulating layer provided on the copper wiring, wherein:
after storage in air with a humidity of 5% for 168 hours at 150° C., the area of void portion of the copper wiring is 10% or less at the copper wiring surface in contact with the insulating layer,
the insulating layer contains a polyimide, and
the polyimide comprises at least one selected from the group consisting of:
(i) polyimide having a structure derived from 4,4′-oxydiphthalic acid dianhydride and a structure derived from 4,4′-diaminodiphenyl ether;
(ii) polyimide having a structure derived from 3,3′4,4′-biphenyltetracarboxylic acid dianhydride and a structure derived from 4,4′-diaminodiphenyl ether; and
(iii) polyimide having a structure derived from 4,4′-oxydiphthalic acid dianhydride and a structure derived from 2,2′-dimethyl-4,4′-diaminobiphenyl.
2 . The semiconductor device according to claim 1 , wherein the area of void portion is 6% or less.
3 . The semiconductor device according to claim 1 , wherein the area of void portion is 5% or less.
4 . The semiconductor device according to claim 1 , wherein the area of void portion is 4% or less.
5 . The semiconductor device according to claim 1 , wherein the area of void portion is 3% or less.
6 . The semiconductor device according to claim 1 , wherein the area of void portion is 2% or less.
7 . The semiconductor device according to claim 1 , wherein the area of void portion is 1% or less.
8 . The semiconductor device according to claim 1 , wherein the area of void portion is vacuum.
9 . The semiconductor device according to claim 1 , wherein the area of void portion is filled with a gas.
10 . The semiconductor device according to claim 1 , wherein the insulating layer is an interlayer insulating film of the semiconductor device.
11 . A method for preparing a semiconductor device comprising:
forming a copper wiring, and
providing an insulating layer on the copper wiring,
wherein:
the insulating layer contains a polyimide, the polyimide comprising at least one selected from the group consisting of:
(i) polyimide having a structure derived from 4,4′-oxydiphthalic acid dianhydride and a structure derived from 4,4′-diaminodiphenyl ether;
(ii) polyimide having a structure derived from 3,3′4,4′-biphenyltetracarboxylic acid dianhydride and a structure derived from 4,4′-diaminodiphenyl ether; and
(iii) polyimide having a structure derived from 4,4′-oxydiphthalic acid dianhydride and a structure derived from 2,2′-dimethyl-4,4′-diaminobiphenyl; and
after storage in air with a humidity of 5% for 168 hours at 150° C., the area of void portion of the copper wiring is 10% or less at the copper wiring surface in contact with the insulating layer.
12 . The method according to claim 11 , further comprising curing a polyimide precursor to form the insulating layer, the polyimide precursor comprising at least one selected from the group consisting of:
(i) polyimide precursor having a structure derived from 4,4′-oxydiphthalic acid dianhydride and a structure derived from 4,4′-diaminodiphenyl ether;
(ii) polyimide precursor having a structure derived from 3,3′4,4′-biphenyltetracarboxylic acid dianhydride and a structure derived from 4,4′-diaminodiphenyl ether; and
(iii) polyimide precursor having a structure derived from 4,4′-oxydiphthalic acid dianhydride and a structure derived from 2,2′-dimethyl-4,4′-diaminobiphenyl.
13 . The method according to claim 12 , further comprising:
exposing a photosensitive polyimide precursor;
developing the photosensitive polyimide precursor after exposure to form a relief pattern; and
heat-treating the relief pattern to form a cured relief pattern as the insulating layer,
wherein the photosensitive polyimide precursor comprises at least one selected from the group consisting of:
(i) polyimide precursor having a structure derived from 4,4′-oxydiphthalic acid dianhydride and a structure derived from 4,4′-diaminodiphenyl ether;
(ii) polyimide precursor having a structure derived from 3,3′4,4′-biphenyltetracarboxylic acid dianhydride and a structure derived from 4,4′-diaminodiphenyl ether; and
(iii) polyimide precursor having a structure derived from 4,4′-oxydiphthalic acid dianhydride and a structure derived from 2,2′-dimethyl-4,4′-diaminobiphenyl.