Compensating battery health readings at low temperatures
Systems and methods for compensating battery health readings at low temperatures are described. In some embodiments, an Information Handling System (IHS) may include: a processor and a memory coupled to the processor, the memory having program instructions stored thereon that, upon execution by the processor, cause the IHS to: calculate a state-of-health (SOH) of a battery, and compensate the SOH, at least in part, by taking into account at least one temperature measured during a charge cycle.
1. An Information Handling System (IHS), comprising:
a processor; and
a memory coupled to the processor, the memory having program instructions stored thereon that, upon execution by the processor, cause the IHS to:
calculate a state-of-health (SOH) of a battery;
measure two or more temperature readings at different values of Relative State of Charge (RSOC) during a charge cycle;
calculate an average of the two or more temperature readings;
calculate or select a temperature factor based on the average, wherein the temperature factor is derived from performance curves indicating temperature-induced variation in cell capacity due to cell impedance changes over a temperature range; and
multiply the SOH by the temperature factor to compensate the SOH.
2. The IHS of claim 1 , wherein the processor comprises an embedded controller (EC).
3. The IHS of claim 1 , wherein the processor comprises a Battery Management Unit (BMU).
4. The IHS of claim 1 , wherein to calculate the SOH, the program instructions, upon execution, cause the IHS to divide a present charge capacity after a full charge cycle by an original charge capacity.
5. The IHS of claim 1 , wherein the different values of RSOC comprise: 100%, 75%, 50%, 25%, and 7%.
6. A method, comprising:
calculating a state-of-health (SOH) of a battery;
measuring two or more temperature readings at different values of Relative State of Charge (RSOC);
calculating an average of the two or more temperature readings;
calculating or select a temperature factor based on the average, wherein the temperature factor is derived from performance curves indicating temperature-induced variation in cell capacity due to cell impedance changes over a temperature range; and
multiplying the SOH by the temperature factor to compensate the SOH.
7. The method of claim 6 , wherein calculating the SOH further comprises dividing a present charge capacity after a full charge cycle by an original charge capacity.
8. The method of claim 6 , wherein the different values of RSOC comprise: 100%, 75%, 50%, 25%, and 7%.
9. The method of claim 6 , wherein the measuring, calculating, and multiplying operations are performed, at least in part, by an embedded controller (EC).
10. The method of claim 6 , wherein the measuring, calculating, and multiplying operations are performed, at least in part, by a Battery Management Unit (BMU).
11. A memory storage device having program instructions stored thereon that, upon execution by one or more processors of an Information Handling System (IHS), cause the IHS to:
calculate a state-of-health (SOH) of a battery;
measure two or more temperature readings at different values of Relative State of Charge (RSOC) during a charge cycle;
calculate an average of the two or more temperature readings;
calculate or select a temperature factor based on the average, wherein the temperature factor is derived from performance curves indicating temperature-induced variation in cell capacity due to cell impedance changes over a temperature range; and
multiply the SOH by the temperature factor to compensate the SOH.
12. The memory storage device of claim 11 , wherein the processor comprises an Embedded Controller (EC).
13. The memory storage device of claim 11 , wherein to calculate the SOH, the program instructions, upon execution, cause the IHS to divide a present charge capacity after a full charge cycle by an original charge capacity.
14. The memory storage device of claim 11 , wherein the processor comprises a Battery Management Unit (BMU).
15. The memory storage device of claim 11 , wherein the different values of RSOC comprise: 100%, 75%, 50%, 25%, and 7%.