Compositions and methods for the deposition of silicon oxide films

1. A method to deposit a film comprising silicon and oxide onto a substrate comprises steps of:

a) providing a substrate in a reactor;

b) introducing into the reactor at least one silicon precursor compound, wherein the at least one silicon precursor compound is selected from the group consisting of Formulae A and B:

wherein

R 1 is independently selected from a linear C 1 to C 10 alkyl group, a branched C 3 to C 10 alkyl group, a C 3 to C 10 cyclic alkyl group, a C 3 to C 10 heterocyclic group, a C 3 to C 10 alkenyl group, a C 3 to C 10 alkynyl group, and a Cato C 10 aryl group;

R 2 is selected from the group consisting of hydrogen, a C 1 to C 10 linear alkyl group, a branched C 3 to C 10 alkyl group, a C 3 to C 10 cyclic alkyl group, a C 3 to C 10 heterocyclic group, a C 3 to C 10 alkenyl group, a C 3 to C 10 alkynyl group, and a C 4 to C 10 aryl group, wherein R 1 and R 2 in Formula A or B are either linked to form a cyclic ring structure or are not linked to form a cyclic ring structure;

R 3-8 are each independently selected from hydrogen, a linear C 1 to C 10 alkyl group, a branched C 3 to C 10 alkyl group, a C 3 to C 10 cyclic alkyl group, a C 2 to C 10 alkenyl group, a C 2 to C 10 alkynyl group, and a C 4 to C 10 aryl group;

X is selected from the group consisting of hydrogen, a linear C 1 to C 10 alkyl group, a branched C 3 to C 10 alkyl group, a C 3 to C 10 cyclic alkyl group, a C 2 to C 10 alkenyl group, a C 2 to C 10 alkynyl group, a C 4 to C 10 aryl group, and a halide, and for formula B only X may further be selected from a NR 9 R 1 ° group, where R 9 and R 10 are each independently selected from hydrogen, a C 1 to C 6 linear alkyl group, a branched C 3 to C 10 alkyl group, a C 3 to C 10 cyclic alkyl group, a C 3 to C 10 alkenyl group, a C 3 to C 10 alkynyl group, and a C 4 to C 10 aryl group, wherein R 9 and R 10 are either linked to form a cyclic ring structure or are not linked to form a cyclic ring structure, and wherein R 1 and R 9 are either linked to form a cyclic ring or are not linked to form a cyclic ring;

c) purging the reactor with purge gas;

d) introducing an oxygen-containing source into the reactor; and

e) purging the reactor with purge gas,

wherein steps b through e are repeated until a desired thickness of the film is deposited, and

wherein the method is conducted at one or more temperatures ranging from about 25° C. to 600° C.

2. The method of claim 1 , wherein the at least one silicon precursor compound is at least one selected from the group consisting of 1-dimethylaminodisiloxane, 1-diethylaminodisiloxane, 1-di-iso-propylaminodisiloxane, 1-di-sec-butylaminodisiloxane, 1-phenylmethylaminodisiloxane, 1-phenylethylaminodisiloxane, 1-cyclohexylmethylaminodisiloxane, 1-cyclohexylethylaminodisiloxane, 1-piperidinodisiloxane, 1-(2,6-dimethylpiperidino)disiloxane, 1-dimethylamino-1,3-dimethyldisiloxane, 1-, diethylamino-1,3-dimethyldisiloxane, 1-di-iso-propylamino-1,3-dimethyldisiloxane, 1-di-sec-butylamino-1,3-dimethyldisiloxane, 1-phenylmethylamino-1,3-dimethyldisiloxane, 1-phenylethylamino-1,3-dimethyldisiloxane, 1-cyclohexylmethylamino-1,3-dimethyldisiloxane, 1-cyclohexylethylamino-1,3-dimethyldisiloxane, 1-dimethylamino-1,1,3,3-tetramethyldisiloxane, 1-diethylamino-1,1,3,3-tetramethyldisiloxane, 1-di-iso-propylamino-1,1,3,3-tetramethyldisiloxane, 1-di-sec-butylamino-1,1,3,3-tetramethyldisiloxane, 1-phenylmethylamino-1,1,3,3-tetramethyldisiloxane, 1-phenylethylamino-1,1,3,3-tetramethyldisiloxane, 1-dimethylamino-1,1,3,3,3-pentamethyldisiloxane, 1-diethylamino-1,1,3,3,3-pentamethyldisiloxane, 1-di-iso-propylamino-1,1,3,3,3-pentamethyldisiloxane, 1-di-sec-butylamino-1,1,3,3,3-pentamethyldisiloxane, 1-pyrrolyl-1,1,3,3,3-pentamethyldisiloxane, 1-pyrrolidine-4,1,3,3,3-pentamethyldisiloxane, 1-piperidino-1,1,3,3,3-pentamethyldisiloxane, 1-(2,6-dimethylpiperidino)-3,3,3-pentamethyldisiloxane, 1-iso-propylamino-3,3,3-trimethyldisiloxane, 1-tert-butylamino-3,3,3-trimethyldisiloxane, 1-dimethylamino-3,3,3-trimethyldisiloxane, 1-diethylamino-3,3,3-trimethyldisiloxane, 1-di-iso-propylamino-3,3,3-trimethyldisiloxane, 1-di-sec-butylamino-3,3,3-trimethyldisiloxane-, 1-cyclohexylmethylamino-3,3,3-trimethyldisiloxane, 1-cyclohexylethylamino-3,3,3-trimethyldisiloxane, 1-piperidino-3,3,3-trimethyldisiloxane, 1-(2,6-dimethylpiperidino)-3,3,3-trimethyldisiloxane, 1-dimethylamino-3,3-dimethyldisiloxane-, 1-diethylamino-3,3-dimethyldisiloxane, 1-di-iso-propylamino-3,3-dimethyldisiloxane, 1-disec-butylamino-3,3-dimethyldisiloxane, 1-cyclohexylmethylamino-3,3-dimethyldisiloxane-, 1-cyclohexylethylamino-3,3-dimethyldisiloxane, 1-piperidino-3,3-dimethyldisiloxane, 1-(2,6-dimethylpiperidino)-3,3-dimethyldisiloxane, 1-dimethylamino-1,1,3,3-tetramethyl-3-chlorodisiloxane, 1-diethylamino-1,1,3,3-tetramethyl-3-chlorodisiloxane, 1-di-iso-propylamino-1,1,3,3-tetramethyl-3-chlorodisiloxane, 1-di-sec-butylamino-1,1,3,3-tetramethyl-3-chlorodisiloxane, 1-dimethylamino-1,1,3,3-tetramethyl-3-bromodisiloxane, 1-diethylamino-1,1,3,3-tetramethyl-3-bromodisiloxane, 1-di-iso-propylamino-1,1,3,3-tetramethyl-3-bromodisiloxane, 1-di-sec-butylamino-1,1,3,3-tetramethyl-3-bromodisiloxane, 1-tert-butylaminodisiloxane, 1-iso-propylaminodisiloxane, 1-tert-butylamino-1,1,3,3-tetramethyldisiloxane, 1-iso-propylamino-1,1,3,3-tetramethyldisiloxane, dimethylaminotrisiloxane, 1-diethylaminotrisiloxane, 1-iso-propylaminotrisiloxane, butylaminotrisiloxane-, 1-phenylmethylaminotrisiloxane, 1-phenylethylaminotrisiloxane, 1-cyclohexylmethylaminotrisiloxane, 1-cyclohexylethylaminotrisiloxane, 1-piperidinotrisiloxane, 1-(2,6-dimethylpiperidino)trisiloxane, 1-dimethylamino-1,1,3,3,5,5-hexamethyltrisiloxane-, 1-diethylamino-1,1,3,3,5,5-hexamethyltrisiloxane, 1-di-iso-propylamino-1,1,3,3,5,5-hexamethyltrisiloxane, 1-sec-butylamino-1,1,3,3,5,5-hexamethyltrisiloxane, 1-phenylmethylamino-1,1,3,3,5,5-hexamethyltrisiloxane, 1-phenylethylamino-1,1,3,3,5,5-hexamethyltrisiloxane, 1,5-bis(dimethylamino)-1,1,3,3,5,5-hexamethyltrisiloxane, 1,5-bis(diethylamino)-1,1,3,3,5,5-hexamethyltrisiloxane, 1,5-bis(di-iso-propylamino)-1,1,3,3,5,5-hexamethyltrisiloxane, 1,5-bis-(sec-butylamino)-1,1,3,3,5,5-hexamethyltrisiloxane, 1,5-bis(phenylmethylamino)-1,1,3,3,5,5-hexamethyltrisiloxane, 1,5-bis(phenylethylamino)-1,1,3,3,5,5-hexamethyltrisiloxane, 1-di-iso-propylamino-3,3,5,5,5-pentamethyltrisiloxane, 1-sec-butylamino-3,3,5,5,5-pentamethyltrisiloxane, 1-cyclohexylmethylamino-3,3,5,55-pentamethyltrisiloxane, 1-cyclohexylethylamino-3,3,5,5,5-pentamethyltrisiloxane, piperidino-3,3,5,5,5-pentamethyltrisiloxane, 1-(2,6-dimethylpiperidino)-3,3,5,5,5-pentamethyltrisiloxane-, 1-dimethylamino-1,1,3,3,5,5,5-heptamethyltrisiloxane, diethylamino-1,1,3,3,5,5,5-heptamethyltrisiloxane, 1-di-iso-propylamino-1,1,3,3,5,5,5-heptamethyltrisiloxane-, 1-sec-butylamino-1,1,3,3,5,5,5-heptamethyltrisiloxane, cyclohexylmethylamino-1,1,3,3,5,5,5-heptamethyltrisiloxane, 1-cyclohexylethylamino-1,1,3,3,5,5,5-heptamethyltrisiloxane, 1-piperidino-1,1,3,3,5,5,5-heptamethyltrisiloxane, (2,6-dimethylpiperidino)-1,1,3,3,5,5,5-heptamethyltrisiloxane-, 1-pyrrolyl-1,1,3,3,5,5,5-heptamethyltrisiloxane, 1-ethylmethylamino-1,1,3,3-tetramethyldisiloxane, and 1-pyrrolidino-1,1,3,3,5,5,5-heptamethyltrisiloxane.

3. The method of claim 1 , wherein the oxygen-containing source is selected from the group consisting of an ozone, an oxygen plasma, a plasma comprising oxygen and argon, a plasma comprising oxygen and helium, an ozone plasma, a water plasma, a nitrous oxide plasma, a carbon dioxide plasma, a carbon monoxide plasma, and combinations thereof.

4. The method of claim 1 wherein the oxygen-containing source comprises plasma.

5. The method of claim 4 wherein the plasma is generated in situ.

6. The method of claim 4 wherein the plasma is generated remotely.

7. The method of claim 4 wherein the film has a density of about 2.1 g/cc or greater.

8. The method of claim 1 wherein the film further comprises carbon.

9. The method of claim 8 wherein the film has a density of about 1.8 g/cc or greater.

10. The method of claim 8 wherein a carbon content of the film is 0.5 atomic weight percent (at. %) as measured by x-ray photospectroscopy or greater.

11. A composition for depositing a film selected from a silicon oxide or a carbon doped silicon oxide film using a vapor deposition process, the composition comprising: at least one silicon precursor compound selected from the group consisting of Formula A and B:

wherein

R 1 is independently selected from a linear C 1 to C 10 alkyl group, a branched C 3 to C 10 alkyl group, a C 3 to C 10 cyclic alkyl group, a C 3 to C 10 heterocyclic group, a C 3 to C 10 alkenyl group, a C 3 to C 10 alkynyl group, and a C 4 to C 10 aryl group;

R 2 is selected from the group consisting of hydrogen, a C 1 to C 10 linear alkyl group, a branched C 3 to C 10 alkyl group, a C 3 to C 10 cyclic alkyl group, a C 3 to C 10 heterocyclic group, a C 3 to C 10 alkenyl group, a C 3 to C 10 alkynyl group, and a C 4 to C 10 aryl group, wherein R 1 and R 2 in Formula A or B are either linked to form a cyclic ring structure or are not linked to form a cyclic ring structure;

R 3-8 are each independently selected from hydrogen, a linear C 1 to C 10 alkyl group, a branched C 3 to C 10 alkyl group, a C 3 to C 10 cyclic alkyl group, a C 2 to C 10 alkenyl group, a C 2 to C 10 alkynyl group, and a C 4 to C 10 aryl group;

X is selected from the group consisting of hydrogen, a linear C 1 to C 10 alkyl group, a branched C 3 to C 10 alkyl group, a C 3 to C 10 cyclic alkyl group, a C 2 to C 10 alkenyl group, a C 2 to C 10 alkynyl group, a C 4 to C 10 aryl group, and a halide (Cl, Br, I), and for formula B only X may further be selected from a NR 9 R 10 group where R 9 and R 10 are each independently selected from hydrogen, a C 1 to C 6 linear alkyl group, a branched C 3 to C 10 alkyl group, a C 3 to C 10 cyclic alkyl group, a C 3 to C 10 alkenyl group, a C 3 to C 10 alkynyl group, and a C 4 to C 10 aryl group, wherein R 9 and R 10 are either linked to form a cyclic ring structure or are not linked to form a cyclic ring structure, and wherein R 1 and R 9 are either linked to form a cyclic ring or are not linked to form a cyclic ring, and wherein the composition is substantially free of one or more impurities selected from the group consisting of a halide, water, metal ions, and combinations thereof.

12. The composition of claim 11 , wherein the at least one silicon precursor compound is at least one selected from the group consisting of 1-dimethylaminodisiloxane, 1-diethylaminodisiloxane, 1-di-iso-propylaminodisiloxane, 1-di-sec-butylaminodisiloxane, 1-phenylmethylaminodisiloxane, 1-phenylethylaminodisiloxane, 1-cyclohexylmethylaminodisiloxane, 1-cyclohexylethylaminodisiloxane, 1-piperidinodisiloxane, 1-(2,6-dimethylpiperidino)disiloxane, 1-dimethylamino-1,3-dimethyldisiloxane, 1-diethylamino-1,3-dimethyldisiloxane, 1-di-iso-propylamino-1,3-dimethyldisiloxane, butylamino-1,3-dimethyldisiloxane, 1-phenylmethylamino-1,3-dimethyldisiloxane, 1-phenylethylamino-1,3-dimethyldisiloxane, 1-cyclohexylmethylamino-1,3-dimethyldisiloxane, 1-cyclohexylethylamino-1,3-dimethyldisiloxane, 1-dimethylamino-1,1,3,3-tetramethyldisiloxane, 1-diethylamino-1,1,3,3-tetramethyldisiloxane, 1-di-iso-propylamino-1,1,3,3-tetramethyldisiloxane, 1-di-sec-butylamino-1,1,3,3-tetramethyldisiloxane, 1-phenylmethylamino-1,1,3,3-tetramethyldisiloxane, 1-phenylethylamino-1,1,3,3-tetramethyldisiloxane, 1-dimethylamino-1,1,3,3,3-pentamethyldisiloxane, 1-diethylamino-1,1,3,3,3-pentamethyldisiloxane, 1-di-iso-propylamino-1,1,3,3,3-pentamethyldisiloxane, 1-di-sec-butylamino-1,1,3,3,3-pentamethyldisiloxane, 1-pyrrolyl-1,1,3,3,3-pentamethyldisiloxane, 1-pyrrolidino-1,1,3,3,3-pentamethyldisiloxane, 1-piperidino-1,1,3,3,3-pentamethyldisiloxane, 1-(2,6-dimethylpiperidino)-3,3,3-pentamethyldisiloxane, 1-iso-propylamino-3,3,3-trimethyldisiloxane, 1-tert-butylamino-3,3,3-trimethyldisiloxane, 1-dimethylamino-3,3,3-trimethyldisiloxane, 1-diethylamino-3,3,3-trimethyldisiloxane, 1-di-iso-propylamino-3,3,3-trimethyldisiloxane, 1-di-sec-butylamino-3,3,3-trimethyldisiloxane, 1-cyclohexylmethylamino-3,3,3-trimethyldisiloxane, 1-cyclohexylethylamino-3,3,3-trimethyldisiloxane, 1-piperidino-3,3,3-trimethyldisiloxane, 1-(2,6-dimethylpiperidine)-3,3,3-trimethyldisiloxane, 1-dimethylamino-3,3-dimethyldisiloxane, 1-diethylamino-3,3-dimethyldisiloxane, 1-di-iso-propylamino-3,3-dimethyldisiloxane, 14-sec-butylamino-3,3-dimethyldisiloxane, 1-cyclohexylmethylamino-3,3-dimethyldisiloxane, 1-cyclohexylethylamino-3,3-dimethyldisiloxane, 1-piperidino-3,3-dimethyldisiloxane, 1-(2,6-dimethylpiperidino)-3,3-dimethyldisiloxane, 1-dimethylamino-1,1,3,3-tetramethyl-3-chlorodisiloxane, 1-diethylamino-1,1,3,3-tetramethyl-3-chlorodisiloxane, propylamino-1,1,3,3-tetramethyl-3-chlorodisiloxane, 1-di-sec-butylamino-1,1,3,3-tetramethyl-3-chlorodisiloxane, 1-dimethylamino-1,1,3,3-tetramethyl-3-bromodisiloxane, 1-diethylamino-1,1,3,3-tetramethyl-3-bromodisiloxane, 1-di-iso-propylamino-1,1,3,3-tetramethyl-3-bromodisiloxane, 1-di-sec-butylamino-1,1,3,3-tetramethyl-3-bromodisiloxane, 1-tert-butylaminodisiloxane, 1-iso-propylaminodisiloxane, 1-tert-butylamino-1,1,3,3-tetramethyldisiloxane 1-iso-propylamino-1,1,3,3-tetramethyldisiloxane, dimethylaminotrisiloxane, 1-diethylaminotrisiloxane, 1-iso-propylaminotrisiloxane, 1-di-sec-butylaminotrisiloxane, 1-phenylmethylaminotrisiloxane, 1-phenylethylaminotrisiloxane, 1-cyclohexylmethylaminotrisiloxane, 1-cyclohexylethylaminotrisiloxane, 1-piperidinotrisiloxane, 1-(2,6-dimethylpiperidino)trisiloxane, 1-dimethylamino-1,1,3,3,5,5-hexamethyltrisiloxane, 1-diethylamino-1,1,3,3,5,5-hexamethyltrisiloxane, 1-di-iso-propylamino-1,1,3,3,5,5-hexamethyltrisiloxane, 1-sec-butylamino-1,1,3,3,5,5-hexamethyltrisiloxane, 1-phenylmethylamino-1,1,3,3,5,5-hexamethyltrisiloxane, 1-phenylethylamino-1,1,3,3,5,5-hexamethyltrisiloxane, 1,5-bis(dimethylamino)-1,1,3,3,5,5-hexamethyltrisiloxane, 1,5-bis(diethylamino)-1,1,3,3,5,5-hexamethyltrisiloxane, 1,5-bis(di-so-propylamino)-1,1,3,3,5,5-hexamethyltrisiloxane, 1,5-bis-(sec-butylamino)-1,1,3,3,5,5-hexamethyltrisiloxane, 1,5-bis(phenylmethylamino)-1,1,3,3,5,5-hexamethyltrisiloxane, 1,5-bis(phenylethylamino)-1,1,3,3,5,5-hexamethyltrisiloxane, 1-di-iso-propylamino-3,3,5,5,5-pentamethyltrisiloxane, 1-sec-butylamino-3,3,5,5,5-pentamethyltrisiloxane, 1-cyclohexylmethylamino-3,3,5,5,5-pentamethyltrisiloxane, 1-cyclohexylethylamino-3,3,5,5,5-pentamethyltrisiloxane, 1-piperidino-3,3,5,5,5-pentamethyltrisiloxane, 1-(2,6-dimethylpiperidino)-3,3,5,5,5-pentamethyltrisiloxane, 1-dimethylamino-1,1,3,3,5,5,5-heptamethyltrisiloxane, diethylamino-1,1,3,3,5,5,5-heptamethyltrisiloxane, 1-di-iso-propylamino-1,1,3,3,5,5,5-heptamethyltrisiloxane, 1-sec-butylamino-1,1,3,3,5,5,5-heptamethyltrisiloxane, cyclohexylmethylamino-1,1,3,3,5,5,5-heptamethyltrisiloxane, 1-cyclo-hexylethylamino-1,1,3,3,5,5,5-heptamethyltrisiloxane, 1-piperidine-1,1,3,3,5,5,5-heptamethyltrisiloxane, (2,6-dimethylpiperidino)-1,1,3,3,5,5,5-heptamethyltrisiloxane, 1-pyrrolyl-1,1,3,3,5,5,5-heptamethyltrisiloxane, 1-ethylmethylamino-1,1,3,3-tetramethyldisiloxane, and 1-pyrrolidino-1,1,3,3,5,5,5-heptamethyltrisiloxane, and combinations thereof.

13. The composition of claim 11 , wherein the halide comprises chloride ions.

14. The composition of claim 13 , wherein the chloride ion concentration is less than 50 ppm.

15. The composition of claim 13 , wherein the chloride ion concentration is less than 10 ppm.

16. The composition of claim 13 , wherein the chloride ion concentration is less than 5 ppm.

17. The composition of claim 11 , wherein R 1 and R 2 are independently selected from methyl and ethyl; R 3-6 are methyl; and X is hydrogen or methyl.