Intermediate ultraviolet laser diode device

1. An intermediate ultraviolet laser diode device operable at a wavelength of less than 380 nm and greater than 200 nm, the device comprising:

a gallium and nitrogen containing substrate member comprising a surface region, a release material overlying the surface region, and an n-type aluminum, gallium, and nitrogen containing material; an active region comprising aluminum, gallium, and nitrogen containing material overlying the n-type aluminum, gallium, and nitrogen containing material, and a p-type aluminum, gallium, and nitrogen containing material; a first transparent conductive oxide material with a band gap energy of greater than 3.2 eV and less than 7.5 eV overlying the p-type aluminum, gallium, and nitrogen containing material, and an interface region overlying the first transparent conductive oxide material; and

a handle substrate bonded to the interface region.

2. The intermediate ultraviolet laser diode device of claim 1 , wherein the interface region is comprised of metal, a semiconductor or another transparent conductive oxide.

3. The intermediate ultraviolet laser diode device of claim 1 , wherein the interface region comprises a contact material.

4. The intermediate ultraviolet laser diode device of claim 1 , wherein the interface region comprises a transparent conductive oxide containing at least one of a gallium, indium or zinc material.

5. The intermediate ultraviolet laser diode device of claim 1 , wherein the release material is selected from a semiconductor, a metal, or a dielectric.

6. The intermediate ultraviolet laser diode device of claim 1 , wherein the release material is selected from GaN, InGaN, AlInGaN, or AlGaN.

7. The intermediate ultraviolet laser diode device of claim 1 , wherein the release material is InGaN.

8. The intermediate ultraviolet laser diode device of claim 1 , wherein the active region comprises a plurality of quantum well regions.

9. The intermediate ultraviolet laser diode device of claim 1 , wherein the handle substrate comprises gallium oxide.

10. The intermediate ultraviolet laser diode device of claim 1 , wherein the handle substrate surface and the interface region surface are bonded directly.

11. The intermediate ultraviolet laser diode device of claim 1 , wherein the handle substrate is selected from a sapphire wafer, silicon carbide wafer, aluminum nitride wafer, silicon wafer, gallium arsenide wafer, or an indium phosphide wafer.

12. The intermediate ultraviolet laser diode device of claim 1 , wherein the handle substrate is a gallium arsenide substrate, indium phosphide, or silicon carbide material.

13. The intermediate ultraviolet laser diode device of claim 1 , wherein surface region of the gallium and nitrogen containing substrate is configured in a semipolar, polar, or non-polar orientation.

14. The intermediate ultraviolet laser diode device of claim 1 , wherein the first transparent conductive oxide is comprised of a gallium oxide material.

15. An intermediate laser diode device operable at a wavelength of less than 380 nm and greater than 200 nm, the device comprising:

a gallium and nitrogen containing substrate member comprising a surface region, a release material overlying the surface region, and an n-type aluminum, gallium, and nitrogen containing material; an active region overlying the n-type aluminum, gallium, and nitrogen containing material, and a p-type aluminum, gallium, and nitrogen containing material; a first transparent conductive oxide region with an band gap energy of greater than 3.2 eV overlying the p-type aluminum, gallium, and nitrogen containing material, and an interface region overlying the first transparent conductive oxide region; and

a handle substrate bonded to the interface region;

wherein the interface region comprises a contact region of metal, semiconductor, or transparent conductive oxide;

wherein the release material is a semiconductor, a metal, or a dielectric; and

wherein the active region comprises a plurality of quantum well regions.

16. The intermediate laser diode device of claim 15 , wherein surface region of the gallium and nitrogen containing substrate is configured in a semipolar, polar, or non-polar orientation.

17. The intermediate laser diode device of claim 15 , wherein the first transparent conductive oxide region is comprised of a gallium oxide material.

18. An intermediate laser diode device operable at a wavelength of less than 380 nm and greater than 200 nm, the device comprising:

a gallium and nitrogen containing substrate member comprising a surface region, a release material overlying the surface region, and an n-type aluminum, gallium, and nitrogen containing material; an active region overlying the n-type aluminum, gallium, and nitrogen containing material, and a p-type aluminum, gallium, and nitrogen containing material; a first transparent conductive oxide layer with an band gap energy of greater than 3.2 eV overlying the p-type aluminum, gallium, and nitrogen containing material, and an interface region overlying the first transparent conductive oxide layer; and

a handle substrate bonded to the interface region.

19. The intermediate laser diode device of claim 18 , wherein the interface region comprises a contact region; wherein the release material is selected from a semiconductor, a metal, or a dielectric; wherein the active region comprises a plurality of quantum well regions; wherein the device further comprises a handle substrate and the handle substrate is selected from a semiconductor, a metal, or a dielectric or combinations thereof, and wherein the first transparent conductive oxide layer is comprised of a gallium oxide material.

20. The intermediate laser diode device of claim 18 , wherein the first transparent conductive oxide layer is comprised of a gallium oxide material.