Memory system, memory controller and method for operating memory system

1. A memory system comprising:

a memory device including a plurality of memory blocks; and

a memory controller configured to:

control the memory device,

manage a hot data pool including at least one of the plurality of memory blocks in which hot data is stored and a cold data pool including at least one of the plurality of memory blocks in which cold data is stored, each of which includes at least one among the plurality of memory blocks, and

write, when receiving from a host a read only write command which instructs a write operation on read only data, the read only data to the cold data pool to manage the read only data as cold data,

wherein the memory controller is further configured to determine whether a maximum value among erase-write cycle counts for the memory blocks in the hot data pool is greater than a maximum value among erase-write cycle counts for the memory blocks in the cold data pool, and

exchange, in response to a determination that the maximum value among erase-write cycle counts for the memory blocks in the hot data pool is greater than the maximum value among erase-write cycle counts for the memory blocks in the cold data pool, at least one among memory blocks in the cold data pool and at least one among memory blocks in the hot data pool with each other, in a wear leveling operation.

2. The memory system according to claim 1 , wherein the read only data is data for one among a multimedia file, an OS file and a library file.

3. The memory system according to claim 1 , wherein the read only data is data which is determined, by the host, as being updated equal to or less than a set threshold count during a set time period.

4. The memory system according to claim 1 , wherein the memory controller is further configured to exclude a memory block in the cold data pool from a target block of a garbage collection operation.

5. The memory system according to claim 1 , wherein the memory controller exchanges a memory block having a minimum erase-write cycle count among the memory blocks in the cold data pool and a memory block having the maximum erase-write cycle count among the memory blocks in the hot data pool, with each other in the wear leveling operation.

6. A memory controller comprising:

a memory interface configured to communicate with a memory device including a plurality of memory blocks; and

a control circuit configured to:

control the memory device,

manage a hot data pool including at least one of the plurality of memory blocks in which hot data is stored and a cold data pool including at least one of the plurality of memory blocks in which cold data is stored, each of which includes at least one among the plurality of memory blocks, and

write, when receiving from a host a read only write command which instructs a write operation on read only data, the read only data to the cold data pool to manage the read only data as cold data,

wherein the control circuit is further configured to determine whether a maximum value among erase-write cycle counts for the memory blocks in the hot data pool is greater than a maximum value among erase-write cycle counts for the memory blocks in the cold data pool, and

exchange, in response to a determination that the maximum value among erase-write cycle counts for the memory blocks in the hot data pool is greater than the maximum value among erase-write cycle counts for the memory blocks in the cold data pool, at least one among memory blocks in the cold data pool and at least one among memory blocks in the hot data pool with each other, in a wear leveling operation.

7. The memory controller according to claim 6 , wherein the control circuit is further configured to exclude a memory block in the cold data pool from a target block of a garbage collection operation.

8. The memory controller according to claim 6 , wherein the control circuit exchanges a memory block having a minimum erase-write cycle count among the memory blocks in the cold data pool and a memory block having the maximum erase-write cycle count among the memory blocks in the hot data pool, with each other in the wear leveling operation.

9. A method for operating a memory system, comprising:

generating a hot data pool including at least one of the plurality of memory blocks in which hot data is stored and a cold data pool including at least one of the plurality of memory blocks in which cold data is stored, each of which includes at least one among a plurality of memory blocks included in a memory device;

receiving, from a host, a read only write command which instructs a write operation on read only data;

writing the read only data to the cold data pool to manage the read only data as cold data;

determining whether a maximum value among erase-write cycle counts for the memory blocks in the hot data pool is greater than a maximum value among erase-write cycle counts for the memory blocks in the cold data pool; and

exchanging, in response to a determination that the maximum value among erase-write cycle counts for the memory blocks in the hot data pool is greater than the maximum value among erase-write cycle counts for the memory blocks in the cold data pool, at least one among memory blocks in the cold data pool and at least one among memory blocks in the hot data pool with each other, in a wear leveling operation.

10. The method according to claim 9 , further comprising: excluding a memory block in the cold data pool from a target block of a garbage collection operation.

11. The method according to claim 9 , wherein a memory block having a minimum erase-write cycle count among the memory blocks in the cold data pool and a memory block having the maximum erase-write cycle count among the memory blocks in the hot data pool are exchanged with each other in the wear leveling operation.