Systems and methods for coaxial multi-color LED

1. A single pixel multi-color micro light-emitting diode (LED) device for a display panel, comprising:

a substrate;

a first LED structure layer stacked on top of the substrate;

a second LED structure layer stacked on top of the first LED structure layer;

a third LED structure layer stacked on top of the second LED structure layer,

wherein the first LED structure layer, the second LED structure layer, and the third LED structure layer substantially overlap laterally with one another to form a light path that combines light emitted from the first LED structure layer, the second LED structure layer, and the third LED structure layer;

wherein each of the first, second and third LED structure layers comprises:

an epitaxial structure forming an LED within the respective LED structure layer;

a lower conductive layer electrically connected to and contacting an entire surface of a bottom of the LED; and

an upper transparent conductive layer electrically connected to and contacting an entire surface of a top of the LED; and

wherein the lower conductive layer is also electrically connected to a pixel driver and the upper transparent conductive layer is also electrically connected to a common electrode;

a single continuous electrode metal contact pad layer electrically connected to and in direct contact with the lower conductive layer of each of the first, second and third LED structure layers; and

a metal bonding layer between the substrate and the first LED structure layer, wherein the single continuous electrode metal contact pad layer is electrically connected to the pixel driver on the substrate by contacting the metal bonding layer.

2. The single pixel multi-color micro-LED device according to claim 1 , further comprising:

a second bonding layer between the first LED structure layer and the second LED structure layer; and

a third bonding layer between the second LED structure layer and the third LED structure layer.

3. The single pixel multi-color micro-LED device according to claim 2 , wherein:

the metal bonding layer is about 0.1 micron to about 3 microns,

the second bonding layer is about 0.1 micron to about 5 microns, and

the third bonding layer is about 0.1 micron to about 5 microns,

wherein the second and third bonding layers are transparent.

4. The single pixel multi-color micro-LED device according to claim 1 , wherein:

the substrate supports the pixel driver and the each of the first, second and third LED structure layers is electrically connected to the pixel driver.

5. The single pixel multi-color micro-LED device according to claim 4 , wherein the pixel driver comprises a thin-film transistor pixel driver or a silicon CMOS pixel driver.

6. The single pixel multi-color micro-LED device according to claim 1 , further comprising:

a first reflection layer between the substrate and the first LED structure layer;

a second reflection layer between the first LED structure layer and the second LED structure layer; and

a third reflection layer between the second LED structure layer and the third LED structure layer.

7. The single pixel multi-color micro-LED device according to claim 6 , wherein:

at least one of the first, the second and the third reflection layers comprises a distributed Bragg reflector (DBR) structure; and

each of the first, the second and the third reflection layers is about 0.1 micron to about 5 microns.

8. The single pixel multi-color micro-LED device according to claim 1 , wherein:

first light emitted from the first LED structure layer propagates through the second LED structure layer and the third LED structure layer, and

second light emitted from the second LED structure layer propagates through the third LED structure layer.

9. The single pixel multi-color micro-LED device according to claim 1 , wherein the epitaxial structure of each of the first, second and third LED structure layers is selected from one or more structures from the group consisting of a III-V nitride epitaxial structure, a III-V arsenide epitaxial structure, a III-V phosphide epitaxial structure, and a III-V antimonide epitaxial structure.

10. The single pixel multi-color micro-LED device according to claim 1 , wherein:

the lower conductive layer and the upper conductive layer for each of the first, second and third LED structure layers comprise Indium Tin Oxide (ITO) layers, and each of the ITO layers is about 0.01 micron to 1 micron.

11. The single pixel multi-color micro-LED device according to claim 1 , further comprising:

a first cathode metal contact pad electrically connected to the upper conductive layer of the first LED structure layer;

a second cathode metal contact pad electrically connected to the upper conductive layer of the second LED structure layer; and

a third cathode metal contact pad electrically connected to the upper conductive layer of the third LED structure layer.

12. The single pixel multi-color micro-LED device according to claim 1 , wherein the epitaxial structure of each of the first, second and third LED structure layers is about 0.3 micron to about 5 microns.

13. The single pixel multi-color micro-LED device according to claim 1 , wherein the LEDs of different LED structure layers produce light of different wavelengths.

14. The single pixel multi-color micro-LED device according to claim 1 , wherein:

the first LED structure layer forms a red light LED;

the second LED structure layer forms a green light LED; and

the third LED structure layer forms a blue light LED.

15. A micro-LED display chip, comprising:

a substrate supporting an array of pixel drivers;

an array of single pixel multi-color micro light-emitting diode (LED) devices, each single pixel multi-color LED device comprising:

three LED structure layers stacked on top of the substrate and pixel drivers, with a bonding layer between adjacent LED structure layers, each of the LED structure layers further comprising:

an epitaxial structure forming a micro LED configured to produce a single color light,

a lower conductive layer electrically connected to and contacting an entire surface of a bottom of the micro LED;

an upper transparent conductive layer electrically connected to and contacting an entire surface of a top of the micro LED; and

a single continuous electrode metal contact pad layer electrically connected to and in direct contact with the lower conductive layer of each of the three LED structure layers, and

a metal bonding layer between the substrate and a first LED structure layer of the three LED structure layers, wherein the single continuous electrode metal contact pad layer is electrically connected to a pixel driver of the array of pixel drivers on the substrate by contacting the metal bonding layer;

wherein:

the array of single pixel multi-color LEDs is electrically connected to the array of pixel drivers and common electrodes,

the lower conductive layer of each of the LED structure layers is also electrically connected to the pixel driver and the upper transparent conductive layer of each of the LED structure layers is also electrically connected to a common electrode,

the three LED structure layers overlap laterally with one another to form a light propagation path through the micro LEDs directly stacked together, and,

the micro LEDs of different LED structure layers produce light of different wavelengths.

16. The micro-LED display chip according to claim 15 , wherein the common electrodes comprise a separate common electrode structure for all the micro LEDs within the same LED structure layer that produce the same color.

17. A method for fabricating a single pixel tri-color micro light-emitting diode (LED) device for a display panel, comprising:

providing a substrate;

forming a metal bonding layer between the substrate and a first LED structure layer;

fabricating a first LED structure layer stacked on top of the substrate;

fabricating a second LED structure layer stacked on top of the first LED structure layer;

fabricating a third LED structure layer stacked on top of the second LED structure layer;

for each of the first, second and third LED structure layers comprising an epitaxial structure:

patterning the epitaxial structure to form an LED within the respective LED structure layer;

coating a lower conductive layer to electrically connect to and contact an entire surface of a bottom of the LED;

coating an upper transparent conductive layer to electrically connect to and contact an entire surface of a top of the LED; and

coating a single continuous anode metal contact pad to electrically connect to and in direct contact with the lower conductive layer of each of the first, second and third LED structure layers, wherein the single continuous anode metal contact pad is electrically connected to a pixel driver on the substrate by contacting the metal bonding layer;

wherein the lower conductive layer is also electrically connected to the pixel driver and the upper transparent conductive layer is also electrically connected to a common electrode,

wherein the first LED structure layer, the second LED structure layer, and the third LED structure layer substantially overlap laterally with one another to form a light path that combines light emitted from the first LED structure layer, the second LED structure layer and the third LED structure layer.

18. The method for fabricating the single pixel tri-color micro-LED device according to claim 17 , further comprising:

bonding the substrate and the first LED structure layer together by the metal bonding layer;

bonding the first LED structure layer and the second LED structure layer together by a second bonding layer; and

bonding the second LED structure layer and the third LED structure layer together by a third bonding layer.

19. The method for fabricating the single pixel tri-color micro-LED device according to claim 18 , further comprising:

coating a first reflection layer on the first LED structure layer before the bonding of the substrate and the first LED structure layer;

coating a second reflection layer on the first LED structure layer before the bonding of the first LED structure layer and the second LED structure layer; and

coating a third reflection layer on the second LED structure layer before the bonding of the second LED structure layer and the third LED structure layer.

20. The method for fabricating the single pixel tri-color micro-LED device according to claim 17 , further comprising:

coating a first cathode metal contact pad to electrically connect to the upper transparent conductive layer of the first LED structure layer;

coating a second cathode metal contact pad to electrically connect to the upper transparent conductive layer of the second LED structure layer; and

coating a third cathode metal contact pad to electrically connect to the upper transparent conductive layer of the third LED structure layer.