Bright silver based quaternary nanostructures
Disclosed are nanostructures comprising Ag, In, Ga, and S and a shell comprising Ag, Ga and S, wherein the nanostructures have a peak wavelength emission of 480-545 nm and wherein at least about 80% of the emission is band-edge emission. Also disclosed are methods of making the nanostructures.
1. Nanostructures comprising Ag, In, Ga, and S (AIGS) and a shell comprising Ag, Ga and S (AGS), wherein the nanostructures have a peak emission wavelength (PWL) in the range of 480-545 nm and wherein at least about 80% of the emission is band-edge emission, and wherein the nanostructures exhibit a quantum yield (QY) of 80-99.9%.
2. The nanostructures of claim 1 , wherein the nanostructures have an emission spectrum with a FWHM of less than 40 nm.
3. The nanostructures of claim 2 , wherein the nanostructures have an emission spectrum with a FWHM of 36-38 nm.
4. The nanostructures of claim 1 , wherein the nanostructures have a QY of 82-96%.
5. The nanostructures of claim 4 , wherein the nanostructures have a QY of 85-95%.
6. The nanostructures of claim 4 , wherein the nanostructures have a QY of 86-94%.
7. The nanostructures of claim 1 , wherein the nanostructures have an OD 450 /mass (mL·mg −1 ·cm −1 ) greater than or equal to 0.8.
8. The nanostructures of claim 7 , wherein the nanostructures have an OD 450 /mass (mL·mg −1 ·cm −1 ) in the inclusive range 0.8-2.5.
9. The nanostructures of claim 8 , wherein the nanostructures have an OD 450 /mass (mL·mg −1 ·cm −1 ) in the inclusive range 0.87-1.9.
10. The nanostructures of claim 1 , wherein the average diameter of the nanostructures is less than 10 nm by TEM.
11. The nanostructures of claim 10 , wherein the average diameter is about 5 nm.
12. The nanostructures of claim 1 , wherein at least about 80% of the emission is band-edge emission.
13. The nanostructures of claim 1 , wherein at least about 90% of the emission is band-edge emission.
14. The nanostructures of claim 13 , wherein 92-98% of the emission is band-edge emission.
15. The nanostructures of claim 13 , wherein 93-96% of the emission is band-edge emission.
16. The nanostructures of claim 1 , that are quantum dots.
17. A nanostructure composition comprising:
(a) at least one population of nanostructures of claim 1 , and
(b) at least one organic resin.
18. The nanostructure composition of claim 17 , further comprising at least one second population of nanostructures that have a PWL greater than 545 nm.
19. A method of preparing a nanostructure composition, the method comprising:
(a) providing at least one population of nanostructures of claim 1 ; and
(b) admixing at least one organic resin with the at least one population of (a).
20. The method of claim 19 , wherein 92-98% of the emission is band-edge emission.
21. The method of claim 19 , wherein 93-96% of the emission is band-edge emission.
22. A device comprising the composition of claim 17 .
23. A film comprising the composition of claim 17 , wherein the nanostructures are embedded in a matrix that comprises the film.
24. A nanostructure molded article comprising:
(a) a first conductive layer;
(b) a second conductive layer; and
(c) a nanostructure layer between the first conductive layer and the second conductive layer, wherein the nanostructure layer comprises the composition of claim 17 .
25. A method of making the nanostructures of claim 1 , comprising
(a) reacting Ga(acetylacetonate) 3 , InCl 3 , and a ligand optionally in a solvent at a temperature sufficient to give an In-Ga reagent, and
(b) reacting the In-Ga reagent with Ag 2 S nanostructures at a temperature sufficient to make AIGS nanostructures,
(c) reacting the AIGS nanostructures with an oxygen-free Ga salt in a solvent containing a ligand at a temperature sufficient to form the nanostructures with a gradient comprising the AIGS core to AGS without a distinct layer of GS.
26. The method of claim 25 , wherein the ligand is an alkylamine.
27. The method of claim 26 , wherein the alkylamine is oleylamine.
28. The method of claim 25 , wherein in (a) the solvent is present and is octadecene, squalane, dibenzylether or xylene.
29. The method of claim 25 , wherein the temperature sufficient in (a) is 100 to 280° C.; the temperature sufficient in (b) is 150 to 260° C.; and the temperature sufficient in (c) is 170 to 280° C.
30. The method of claim 25 , wherein the temperature sufficient in (a) is about 210° C., the temperature sufficient in (b) is about 210° C., and the temperature sufficient in (c) is about 240° C.