Variable modulation scheme for memory device access or operation
Methods, systems, and devices that support variable modulation schemes for memory are described. A device may switch between different modulation schemes for communication based on one or more operating parameters associated with the device or a component of the device. The modulation schemes may involve amplitude modulation in which different levels of a signal represent different data values. For instance, the device may use a first modulation scheme that represents data using two levels and a second modulation scheme that represents data using four levels. In one example, the device may switch from the first modulation scheme to the second modulation scheme when bandwidth demand is high, and the device may switch from the second modulation scheme to the first modulation scheme when power conservation is in demand. The device may also, based on the operating parameter, change the frequency of the signal pulses communicated using the modulation schemes.
1. A method for communication, comprising:
communicating, over a data bus coupled with a memory device, a first set of sensed data in a first signal modulated using a first modulation scheme;
selecting, after using the first modulation scheme to communicate the first set of sensed data over the data bus, a second modulation scheme different from the first modulation scheme for communicating a second set of sensed data over the data bus, the second modulation scheme based at least in part on a set of operating parameters of the memory device; and
communicating, over the data bus, the second set of sensed data in a second signal modulated using the second modulation scheme.
2. The method of claim 1 , further comprising:
determining a change in an operating parameter of the set of operating parameters after communicating the first signal, wherein the second modulation scheme is selected based at least in part on determining the change in the operating parameter.
3. The method of claim 1 , wherein the first signal has a first frequency, the method further comprising:
selecting for use with the second modulation scheme a second frequency that is different than the first frequency, wherein the second signal has the second frequency.
4. The method of claim 1 , wherein the second signal has a first frequency, the method further comprising:
determining a change in an operating parameter of the set of operating parameters after communicating the second set of sensed data in the second signal having the first frequency;
selecting for use with the second modulation scheme a second frequency different than the first frequency, wherein the second frequency is based at least in part on the change in the operating parameter; and
communicating, over the data bus, a third set of sensed data in a third signal that has the second frequency and that is modulated using the second modulation scheme.
5. The method of claim 1 , further comprising:
determining a change in an operating parameter of the set of operating parameters after communicating the second set of sensed data in the second signal;
selecting the first modulation scheme based at least in part on determining the change in the operating parameter; and
communicating, based at least in part on selecting the first modulation scheme, a third set of sensed data in a third signal modulated using the first modulation scheme.
6. The method of claim 1 , wherein the first set of sensed data is communicated from a memory controller to a device coupled with the memory controller, the method further comprising:
receiving a request for a communication metric from the device after communicating the first set of sensed data, wherein the second modulation scheme is selected to satisfy the communication metric requested by the device.
7. The method of claim 1 , wherein the first set of sensed data is communicated from a memory controller, the method further comprising:
determining, after communicating the first set of sensed data in the first signal, that a temperature of the memory controller satisfies a threshold temperature, wherein the second modulation scheme is selected based at least in part on the temperature of the memory controller satisfying the threshold temperature.
8. The method of claim 1 , wherein the first set of sensed data is communicated from a memory controller, the method further comprising:
determining, after communicating the first set of sensed data in the first signal, a power status for the memory controller, wherein the second modulation scheme is selecting based at least in part on the power status for the memory controller.
9. The method of claim 1 , wherein the first set of sensed data is for a first application associated with a first data rate, the method further comprising:
determining that the second set of sensed data is for a second application associated with second data rate, wherein the second modulation scheme is selected based at least in part on the determination.
10. The method of claim 1 , wherein communicating the first signal and the second signal comprises communicating between a memory die and a memory controller coupled with the memory die.
11. The method of claim 1 , wherein communicating the first signal and the second signal comprises communicating between a memory controller and a host device coupled with the memory controller.
12. An apparatus, comprising:
a memory array; and
a memory controller coupled with the memory array and configured to cause the apparatus to:
communicate, over a data bus coupled with the apparatus, a first set of sensed data in a first signal modulated in accordance with a first modulation scheme, wherein the first set of sensed data is sensed from the memory array;
select, based at least in part on a set of operating parameters of the memory controller, a second modulation scheme different from the first modulation scheme; and
communicate, over the data bus, a second set of sensed data in a second signal modulated in accordance with the second modulation scheme, wherein the second set of sensed data is sensed from the memory array.
13. The apparatus of claim 12 , further comprising:
a clock circuit configured to generate a first clock signal at a first frequency and a second clock signal at a second frequency, wherein the memory controller is configured to:
communicate the first set of sensed data in the first signal at the first frequency; and
communicate the second set of sensed data in the second signal at the second frequency, wherein the second frequency is different than the first frequency.
14. The apparatus of claim 12 , wherein the memory controller is further configured to cause the apparatus to:
determine a change in an operating parameter of the set of operating parameters after communicating the first signal, wherein the second modulation scheme is selected based at least in part on determining the change in the operating parameter.
15. The apparatus of claim 12 , wherein the memory controller is further configured to cause the apparatus to:
receive, for storage at the memory array, a third set of data in a third signal modulated according to the first modulation scheme; and
receive, for storage at the memory array, a fourth set of data in a fourth signal modulated according to the second modulation scheme.
16. An apparatus, comprising:
a memory array; and
a controller coupled with the memory array and configured to cause the apparatus to:
communicate, over a data bus, a first set of sensed data in a first signal modulated in accordance with a first modulation scheme, wherein the first set of sensed data is sensed from the memory array;
select, based at least in part on a change in an operating parameter of the apparatus, a second modulation scheme different from the first modulation scheme:
communicate, over the data bus, a second set of sensed data in a second signal modulated in accordance with the second modulation scheme, wherein the second set of sensed data is sensed from the memory array;
receive, for storage at the memory array, a third set of data in a third signal modulated according to the first modulation scheme;
receive, for storage at the memory array, a fourth set of data in a fourth signal modulated according to the second modulation scheme; and
modify a page size of the memory array based at least in part the second modulation scheme being used for the fourth signal, wherein the page size is modified relative to a second page size associated with the first modulation scheme.
17. A method, comprising:
receiving a first set of data to be communicated to a device coupled with a memory controller of a memory device;
modulating, by the memory controller, a first signal representing the first set of data using a first modulation scheme used by the memory controller to communicate with the device;
receiving a second set of data to be communicated to the device coupled with the memory controller; and
modulating, by the memory controller, a second signal representing the second set of data using a second modulation scheme used by the memory controller to communicate with the device, the second modulation scheme based at least in part on a set of operating parameters of the memory device.
18. The method of claim 17 , further comprising:
determining a bandwidth requirement of an application associated with the second signal, wherein selecting the second modulation scheme is based at least in part on determined bandwidth requirement.
19. The method of claim 17 , further comprising:
transmitting the first signal at a first frequency, the first signal having a first quantity of levels; and
transmitting the second signal at a second frequency, the second signal having a second quantity of levels different than the first quantity of levels.
20. The method of claim 17 , wherein the device comprises a host device or a memory die.