Electronic label-free DNA and genome sequencing
A method of manufacturing a device useable in DNA or genome sequencing comprises disposing pairs of electrodes on a substrate, the electrodes within each pair separated by a nanogap; depositing a resist layer over the electrodes; patterning the resist layer to create an exposed region on each electrode at or near each nanogap; roughening the electrode surface within each exposed region using various methods; and exposing the exposed regions to biomolecules, wherein one biomolecule bridges each nanogap of each electrode pair, with each end of each biomolecule bound to the electrodes at each exposed region.
1. A method of manufacturing a device for DNA or genome sequencing, the method comprising:
depositing a resist layer over a pair of electrodes disposed on a substrate, wherein each of the electrodes in the pair are separated by a nanogap;
patterning the resist layer to create an exposed region on each electrode at or near the nanogap;
increasing a surface area of the exposed region on each electrode; and
introducing a biomolecule to the exposed regions, wherein the biomolecule has at least first and second ends, with each end comprising a functionalization for immobilizing the biomolecule to the pair of electrodes,
wherein the biomolecule bridges the nanogap, with the first and second ends of the biomolecule being bound to the exposed regions.
2. The method of claim 1 , wherein the resist layer comprises an electrically insulating polymer or oxide coating of from about 3 nm to about 20 nm in thickness.
3. The method of claim 1 , wherein the patterning comprises e-beam or nanolithography.
4. The method of claim 1 , wherein each electrode comprises an alloy of a metal selected from the group consisting of platinum (Pt), palladium (Pd), rhenium (Rh), titanium (Ti), silver (Ag), and gold (Au).
5. The method of claim 4 , wherein the alloy is an Au metal alloy selected from the group consisting of Au—Fe, Au—Si, Au—Ge, Au—Bi, Au—Co, Au—Mo, Au—Rh, Au—Ru, and Au—W.
6. The method of claim 5 , wherein the alloy is an Au—Fe alloy comprising about 50 wt. % Au and 50 wt. % Fe, and wherein at room temperature the alloy segregates into an Au matrix embedded with Fe nanoparticles.
7. The method of claim 6 , wherein increasing a surface area of the electrode comprises etching the Fe nanoparticles out of the exposed region.
8. The method of claim 7 , further comprising annealing the alloy at 200 to 600° C. for 10 to 12 hours.
9. A method of manufacturing a device for DNA or genome sequencing, said method comprising:
disposing a pair of electrodes on a substrate, wherein each of the electrodes in the pair are separated by a nanogap;
depositing a resist layer over the pair of electrodes;
patterning the resist layer to create an exposed region on each electrode at or near the nanogap;
increasing a surface area of the exposed region on each electrode and introducing a biomolecule to the exposed regions, wherein the biomolecule has at least first and second ends, with each end comprising a functionalization for immobilizing the biomolecule to the pair of electrodes,
wherein the biomolecule bridges the nanogap, with the first and second ends of the biomolecule being bound to the exposed regions.
10. The method of claim 9 , wherein the resist layer comprises an electrically insulating polymer or oxide coating of from about 3 nm to about 20 nm in thickness.
11. The method of claim 9 , wherein the patterning comprises e-beam or nanolithography.
12. The method of claim 9 , wherein each electrode comprises an alloy of a metal selected from the group consisting of platinum (Pt), palladium (Pd), rhenium (Rh), titanium (Ti), silver (Ag), and gold (Au).
13. The method of claim 12 , wherein disposing the pair of electrodes comprises depositing the electrodes by sputtering or evaporation deposition.
14. The method of claim 13 , wherein the sputtering or evaporation deposition is performed from about 150° C. to about 400° C.
15. The method of claim 14 , wherein a bias voltage is applied during the sputtering or evaporation deposition.
16. The method of claim 13 , wherein the alloy is an Au metal alloy selected from the group consisting of Au—Fe, Au—Si, Au—Ge, Au—Bi, Au—Co, Au—Mo, Au—Rh, Au—Ru, and Au—W.
17. The method of claim 16 , wherein the alloy is an Au—Fe alloy comprising about 50 wt. % Au and 50 wt. % Fe, and wherein at room temperature the alloy segregates into an Au matrix embedded with Fe nanoparticles.
18. The method of claim 17 , wherein increasing a surface area of the electrode comprises etching the Fe nanoparticles out of the exposed region.
19. The method of claim 18 , further comprising annealing the alloy from about 200° C. to about 600° C. for about 10 minutes to about 12 hours.
20. The method of claim 9 , wherein the nanogap is from about 5 nm to about 20 nm in width.