Methods, devices, and systems for integration, beam forming and steering of ultra-wideband, wireless optical communication devices and systems

1. A free space optical (FSO) communication apparatus comprising:

a semiconductor optical device implemented within a semiconductor die having a plurality of epitaxial layers, wherein:

the plurality of epitaxial layers includes at least one of gallium arsenide (GaAs), aluminium gallium arsenide (AlGaAs), gallium nitride (GaN), aluminium gallium nitride (AlGaN), gallium antimonide (GaSb), and aluminium gallium antimonide (AlGaSb);

the plurality of epitaxial layers further includes a first epitaxial layer having a first index of refraction and a second epitaxial layer having a second index of refraction; and

the first index of refraction is relatively high to the second index of refraction;

a lens; and

a first band select filter.

2. The FSO communication apparatus of claim 1 , wherein the semiconductor optical device is a non-coherent optical source.

3. The FSO communication apparatus of claim 2 , wherein the non-coherent optical source is a light emitting diode (LED).

4. The FSO communication apparatus of claim 1 , wherein the semiconductor optical device is a coherent optical source.

5. The FSO communication apparatus of claim 4 , wherein the coherent optical source is a laser diode.

6. The FSO communication apparatus of claim 1 , wherein the semiconductor optical device is an optical detector.

7. The FSO communication apparatus of claim 1 , wherein the semiconductor optical device comprises an array of optical sources.

8. The FSO communication apparatus of claim 1 , wherein the semiconductor optical device comprises an array of optical detectors.

9. The FSO communication apparatus of claim 1 , wherein the semiconductor optical device comprises:

an array of optical sources; and

an array of optical detectors.

10. The FSO communication apparatus of claim 1 , wherein:

the first band select filter is deposited on a surface of the lens facing away from the semiconductor optical device; and

the first band select filter is at least one of a single-layer band select filter and a multi-layer band select filter.

11. The FSO communication apparatus of claim 1 , wherein:

the first band select filter is deposited on a surface of the lens facing towards the semiconductor optical device; and

the first band select filter is at least one of a single-layer band select filter and a multi-layer band select filter.

12. The FSO communication apparatus of claim 1 , further comprising a second band select filter, wherein:

the first band select filter is deposited on a first surface of the lens facing towards the semiconductor optical device;

the first band select filter is at least one of a single-layer band select filter and a multi-layer band select filter;

the second band select filter is deposited on a second surface of the lens facing away from the semiconductor optical device; and

the second band select filter is at least one of a single-layer band select filter and a multi-layer band select filter.

13. The FSO communication apparatus of claim 1 , wherein:

the first band select filter is a filter element positioned between the lens and the semiconductor optical device; and

the filter element is at least one of a single-layer band select filter and a multi-layer band select filter.

14. The FSO communication apparatus of claim 1 , wherein the plurality of epitaxial layers form a multi-band select filter.

15. The FSO communication apparatus of claim 1 , wherein the semiconductor optical device includes a first optical source implemented on a first optical die, the first optical die comprising:

a frontside surface implementing flip-chip bonding to an electronics die; and

a backside surface configured for optical emission, wherein the backside surface includes patterning using triangular indentations.

16. The FSO communication apparatus of claim 15 , wherein-the backside surface further includes an escape cone area having a substantially flat surface and the triangular indentations surround the escape cone area.

17. The FSO communication apparatus of claim 1 , wherein the FSO communication apparatus is implemented within an access hub and the access hub provides at least a portion of a wireless local area network (WLAN).

18. The FSO communication apparatus of claim 17 , wherein:

the access hub is configured to communicate optically with a plurality of devices; and

the FSO communication apparatus is configured to provide a plurality of optical wavelengths.

19. The FSO communication apparatus of claim 1 , wherein the FSO communication apparatus is implemented within a wireless transceiver.

20. The FSO communication apparatus of claim 1 , wherein the semiconductor optical device is implemented using a plurality of optical dies configured using flip-chip bonding to an electronics die.

21. The FSO communication apparatus of claim 1 , wherein the semiconductor optical device includes a first optical source implemented on a first optical die, the first optical die comprising a frontside surface implementing flip-chip bonding to an electronics die and the frontside surface is configured for optical emission.

22. A free space optical (FSO) communication apparatus comprising:

a lens;

a first band select filter; and

a semiconductor optical device including a first optical source implemented on a first optical die, wherein:

the first optical die comprises a first surface configured for optical emission; and

the first surface includes patterning using triangular indentations, wherein the first surface further includes an escape cone area having a substantially flat surface and the triangular indentations surround the escape cone area.

23. A free space optical (FSO) communication apparatus comprising:

a lens;

a first band select filter; and

a semiconductor optical device including a first optical source implemented on a first optical die, wherein:

the first optical die comprises a first surface configured for optical emission and a second surface that is opposite the first surface;

and

at least one of the first surface and the second surface implements flip-chip bonding for connection to an electronics die.