Die-to-wafer bonding utilizing micro-transfer printing

1. A method comprising: transferring, by micro-transfer printing, a plurality of die from a source wafer onto an intermediate handle wafer comprising a substrate coated with an adhesive layer to create an intermediate handle wafer structure including the plurality of die, wherein the source wafer comprises a top layer of tether material from which the plurality of die are suspended, and wherein transferring the plurality of die comprises picking the plurality of die from the source wafer and placing the plurality of die onto the adhesive layer of the intermediate handle wafer using a micro-transfer printing stamp brought in contact with the tether material at locations of the plurality of die; bonding the intermediate handle wafer structure die-down onto a target wafer, the bonding comprising plasma-activating at least one of bonding surfaces of the plurality of die or a bonding surface of the target wafer, and placing the intermediate handle wafer structure die-down onto the target wafer to cause formation of an initial bond between the plurality of die and the target wafer; and removing the substrate and the adhesive layer of the intermediate handle water, leaving the plurality of die bonded to the target wafer.

2. The method of claim 1 , wherein bonding the intermediate handle wafer structure die-down onto the target wafer further comprises aligning the intermediate handle wafer structure with the target water prior to causing initial bond formation.

3. The method of claim 1 , wherein bonding the intermediate handle wafer structure die-down onto the target wafer further comprises annealing the initial bond by application of heat and pressure.

4. The method of claim 1 , wherein bonding the intermediate handle wafer structure die-down onto the target wafer further comprises vacuum-assisted wafer-to-wafer bonding.

5. The method of claim 1 , further comprising forming the plurality of die in the source wafer by selectively etching a lift-off layer formed in the source water between a substrate layer and a layer comprising the plurality of die.

6. The method of claim 1 , further comprising removing the tether material from the plurality of die prior to bonding the intermediate handle wafer structure die-down onto the target wafer.

7. The method of claim 6 , wherein the tether material is removed by a wet etch.

8. The method of claim 1 , wherein the tether material is kept on the plurality of die to form part of a device structure of a device to be formed in the plurality of die.

9. The method of claim 1 , wherein the tether material comprises at least one of a silicon nitride, a silicon oxide, or photoresist.

10. The method of claim 1 , wherein the plurality of die comprise a plurality of layers of material, at least one of the layers differing from a material of the target water.

11. The method of claim 1 , wherein the plurality of die comprise one or more compound semiconductor materials and the target wafer is a silicon-on-insulator wafer.

12. The method of claim 1 , wherein the adhesive layer comprises at least one of an epoxy or a photoresist.

13. The method of claim 1 , wherein the substrate and adhesive layer of the intermediate handle wafer are removed by wet etching.

14. The method of claim 1 , further comprising patterning the target wafer prior to bonding the intermediate handle wafer structure die-down onto a target wafer.

15. The method of claim 1 , further comprising patterning the plurality of die after bonding the intermediate handle wafer structure die-down onto a target wafer and removing the substrate and adhesive layer of the intermediate handle wafer.

16. The method of claim 1 , wherein the plurality of die have a smallest lateral dimensions of less than 100 mm.