Method for manufacturing an anchor-shaped backside via
A method includes providing a fin, an isolation structure, and first and second source/drain (S/D) features over the fin; forming an etch mask covering a first portion and exposing a second portion of the fin; removing the second portion of the fin, resulting in a first trench; filling the first trench with a first dielectric feature; removing the etch mask; and applying etching process(es) to remove the first portion of the fin and to partially recess the first S/D feature. The etching process(es) includes an isotropic etching tuned selective to materials of the first S/D feature and not materials of the isolation structure and the first dielectric feature, resulting in a second trench under the first S/D feature and having a gap between a bottom surface of the first S/D feature and a top surface of the isolation structure. The method further includes forming a via in the second trench.
1. A method, comprising:
providing a structure including a fin, an isolation structure adjacent to sidewalls of the fin, and first and second source/drain (S/D) features over the fin;
forming an etch mask covering a first portion of the fin under the first S/D feature and exposing a second portion of the fin under the second S/D feature;
removing the second portion of the fin, resulting in a first trench;
filling the first trench with a first dielectric feature;
removing the etch mask;
applying one or more etching processes to remove the first portion of the fin and to partially recess the first S/D feature, wherein the one or more etching processes include an isotropic etching tuned selective to materials of the first S/D feature and not materials of the isolation structure and the first dielectric feature, resulting in a second trench under the first S/D feature and having a gap vertically between a bottom surface of the first S/D feature and a top surface of the isolation structure; and
forming a via structure in the second trench.
2. The method of claim 1 , wherein a vertical dimension of the gap becomes smaller as the gap extends towards a sidewall of the first S/D feature in a cross-section perpendicular to a direction from the first S/D feature to the second S/D feature.
3. The method of claim 1 , wherein the structure further includes two dielectric fins sandwiching the first S/D feature, and the gap exposes a side surface of the dielectric fins.
4. The method of claim 1 , wherein the first S/D feature comprises silicon or silicon germanium, the isolation structure comprises silicon oxide, the first dielectric feature comprises silicon nitride, and the isotropic etching uses plasma generated from a fluorine-containing gas and ammonia.
5. The method of claim 1 , before the forming of the via structure, further comprising:
forming a silicide feature on the bottom surface of the first S/D feature, wherein the via structure is formed on the silicide feature.
6. The method of claim 1 , wherein the structure further includes a substrate under the fin, further comprising:
before the forming of the etch mask, thinning down the substrate until the fin is exposed.
7. The method of claim 1 , wherein in a cross-section perpendicular to a direction from the first S/D feature to the second S/D feature, a first portion of the via structure proximal the first S/D feature is wider than a second portion of the via structure distal the first S/D feature.
8. The method of claim 7 , wherein in another cross-section parallel to the direction from the first S/D feature to the second S/D feature, the first portion of the via structure is narrower than the second portion of the via structure.
9. The method of claim 1 , wherein filling the first trench with the first dielectric feature includes:
depositing a dielectric liner layer over surfaces of the first trench; and
filling a remaining portion of the first trench with another dielectric material.
10. A method, comprising:
providing a structure including a substrate, a fin over the substrate, an isolation structure over the substrate and adjacent to sidewalls of the fin, first and second source/drain (S/D) features over the fin, a dielectric cap over the fin and between the first and the second S/D features, a channel layer over the dielectric cap and connecting the first and the second S/D features, and a gate structure engaging the channel layer;
thinning down the substrate until the fin is exposed;
forming an etch mask covering a first portion of the fin and exposing a second portion of the fin;
removing the second portion of the fin, resulting in a first trench exposing the second S/D feature;
filling the first trench with a first dielectric feature;
performing a chemical mechanical planarization (CMP) process to planarize the first dielectric feature and remove the etch mask;
removing the first portion of the fin and recessing the first S/D feature by one or more etching processes including an isotropic etching process, resulting in a second trench exposing the first S/D feature and having a gap vertically between a bottom surface of the first S/D feature and a top surface of the isolation structure, wherein the isotropic etching process is tuned selective to materials of the fin and the first S/D feature and not materials of the isolation structure, the dielectric cap, and the first dielectric feature; and
forming a via structure in the second trench and electrically connecting to the first S/D feature.
11. The method of claim 10 , before the forming of the via structure, further comprising:
forming a silicide feature on the bottom surface of the first S/D feature, wherein the via structure is formed on the silicide feature.
12. The method of claim 10 , wherein the fin comprises silicon, the first S/D feature comprises silicon or silicon germanium, and the isotropic etching process uses plasma generated from a fluorine-containing gas and ammonia.
13. The method of claim 10 , wherein a vertical dimension of the gap becomes smaller as the gap extends towards a sidewall of the first S/D feature in a cross-section perpendicular to a direction from the first S/D feature to the second S/D feature.
14. The method of claim 10 , wherein the structure further includes two dielectric fins sandwiching the first S/D feature, and the gap exposes a side surface of the dielectric fins.
15. The method of claim 14 , wherein the via structure physically contacts the side surface of the dielectric fins.
16. The method of claim 10 , further comprising:
forming a power rail under the via structure and electrically connecting to the via structure.
17. A method, comprising:
providing a structure including a fin protruding towards a front side of the structure, an isolation structure adjacent to sidewalls of the fin, and first and second source/drain (S/D) features above the fin with reference to a direction from a back side of the structure to the front side of the structure;
forming an etch mask on the back side of the structure, wherein the etch mask is directly over a first portion of the fin below the first S/D feature and exposes a second portion of the fin below the second S/D feature;
etching the second portion of the fin through the etch mask, resulting in a first trench in the structure;
filling the first trench with a first dielectric feature;
removing the etch mask; and
applying one or more etching processes to remove the first portion of the fin, wherein the one or more etching processes further recesses the first S/D feature, resulting in a second trench under the first S/D feature and having a gap vertically between a bottom surface of the first S/D feature and a top surface of the isolation structure.
18. The method of claim 17 , further comprising:
forming a via structure in the second trench and electrically connecting to the first S/D feature.
19. The method of claim 18 , wherein in a cross-section perpendicular to a direction from the first S/D feature to the second S/D feature, a first portion of the via structure proximal the first S/D feature is wider than a second portion of the via structure distal the first S/D feature.
20. The method of claim 17 , wherein the fin comprises silicon, the first S/D feature comprises silicon or silicon germanium, and the one or more etching processes includes an isotropic etching process that uses plasma generated from a fluorine-containing gas and ammonia.