Integrated arrangements of pull-up transistors and pull-down transistors, and integrated static memory
Some embodiments include an integrated assembly having a first pull-down transistor, a second pull-down transistor, a first pull-up transistor and a second pull-up transistor. The first pull-down transistor has a first conductive-gate-body at a first level, and has an n-channel-device-active-region at a second level vertically offset from the first level. The first pull-up transistor has a second conductive-gate-body at the first level, and has a p-channel-device-active-region at the second level. The second pull-down transistor has a third conductive-gate-body at the second level, and has an n-channel-device-active-region at the first level. The second pull-up transistor has a fourth conductive-gate-body at the second level, and has a p-channel-device-active-region at the first level.
1. An integrated assembly, comprising:
a first pull-down transistor having a first conductive-gate-body vertically offset from a first n-channel-device-active-region; the first conductive-gate-body comprising a first portion of a first conductive region at a first level; the first n-channel-device-active-region being laterally surrounded by a first portion of a second conductive region; the second conductive region being at a second level vertically offset from the first level; and
a first pull-up transistor having a second conductive-gate-body vertically offset from a first p-channel-device-active-region; the second conductive-gate-body comprising a second portion of the first conductive region; the first p-channel-device-active-region being laterally surrounded by a second portion of the second conductive region.
2. The integrated assembly of claim 1 , further comprising:
a second pull-down transistor having a third conductive-gate-body vertically offset from a second n-channel-device-active-region; and
a second pull-up transistor having a fourth conductive-gate-body vertically offset from a second p-channel-device-active-region.
3. The integrated assembly of claim 2 , further comprising:
a first reference voltage source coupled with the first and second n-channel-device-active-regions; and
a second reference voltage source coupled with the first and second p-channel-device-active-regions.
4. The integrated assembly of claim 2 further comprising an insulative sheet extending through the first pull-down transistor, second pull-down transistor, first pull-up transistor and second pull-up transistor.
5. The integrated assembly of claim 4 wherein the insulative sheet comprises silicon dioxide.
6. An integrated assembly, comprising:
a first set of disks at a first level; the first set of disks including:
a first disk having a first n-channel-device-active-region surrounding a first segment of a first conductive pillar, and having a first conductive ring surrounding the first n-channel-device-active-region; and
a second disk having a first p-channel-device-active-region surrounding a first segment of a second conductive pillar, and having a second conductive ring surrounding the first p-channel-device-active-region.
7. The integrated assembly of claim 6 wherein the first set of disks further comprises:
a third disk having a first conductive-gate-body surrounding a first segment of a third conductive pillar;
a fourth disk having a second conductive-gate-body surrounding a first segment of a fourth conductive pillar;
a fifth disk having a third conductive-gate-body surrounding a first segment of a fifth conductive pillar; and
a sixth disk having a second n-channel-device-active-region surrounding a first segment of a sixth conductive pillar, and having a third conductive ring surrounding the second n-channel-device-active-region.
8. The integrated assembly of claim 7 , further comprising a second set of disks at a second level; the second level being vertically offset relative to the first level.
9. The integrated assembly of claim 8 wherein the second set of disks includes:
a seventh disk having a fourth conductive-gate-body surrounding a second segment of the first conductive pillar; and
an eighth disk having a fifth conductive-gate-body surrounding a second segment of the second conductive pillar.
10. An integrated assembly, comprising:
six conductive pillars laterally adjacent one another; the conductive pillars being a first, second, third, fourth, fifth and sixth conductive pillar; the first and third conductive pillars being coupled to a first reference voltage source; the second and fourth conductive pillars being coupled to a second reference voltage source; the fifth conductive pillar being along a first comparative bitline; the sixth conductive pillar being along a second comparative bitline; and
a first pull-down transistor along the first conductive pillar, and having a first conductive-gate-body vertically offset from a first n-channel-device-active-region; the first conductive-gate-body comprising a first portion of a first conductive region at a first level and laterally surrounding the first conductive pillar; the first n-channel-device-active-region laterally surrounding the first conductive pillar, being coupled with the first conductive pillar, and being laterally surrounded by a first portion of a second conductive region; the second conductive region being at a second level vertically offset from the first level.
11. The integrated assembly of claim 10 , further comprising a second pull-down transistor along the third conductive pillar, and having a second conductive-gate-body vertically offset from a second n-channel-device-active-region; the second conductive-gate-body comprising a second portion of the second conductive region and laterally surrounding the third conductive pillar; the second n-channel-device-active-region laterally surrounding the third conductive pillar, being coupled with the third conductive pillar, and being laterally surrounded by a second portion of the first conductive region.
12. The integrated assembly of claim 11 further comprising a pull-up transistor along the second conductive pillar, and having a third conductive-gate-body vertically offset from a first p-channel-device-active-region; the third conductive-gate-body comprising a third portion of the first conductive region and laterally surrounding the second conductive pillar; the first p-channel-device-active-region laterally surrounding the second conductive pillar, being coupled with the second conductive pillar, and being laterally surrounded by a third portion of the second conductive region.
13. The integrated assembly of claim 12 wherein the pull-up transistor is a first pull-up transistor, and further comprising a second pull-up transistor along the fourth conductive pillar, and having a fourth conductive-gate-body vertically offset from a second p-channel-device-active-region; the fourth conductive-gate-body comprising a fourth portion of the second conductive region and laterally surrounding the fourth conductive pillar; the second p-channel-device-active-region laterally surrounding the fourth conductive pillar, being coupled with the fourth conductive pillar, and being laterally surrounded by a fourth portion of the first conductive region.
14. The integrated assembly of claim 10 wherein the first reference voltage source is at ground, and wherein the second reference voltage source is at Vcc.
15. The integrated assembly of claim 10 wherein the first and second conductive regions comprise metal.
16. The integrated assembly of claim 10 wherein:
the first n-channel-device-active-region directly contacts the first conductive pillar; and
the second n-channel-device-active-region directly contacts the third conductive pillar.