Flowable film formation and treatments
Exemplary processing methods may include forming a plasma of a silicon-containing precursor. The methods may include depositing a flowable film on a semiconductor substrate with plasma effluents of the silicon-containing precursor. The semiconductor substrate may define a feature within the semiconductor substrate. The methods may include forming a plasma of a hydrogen-containing precursor within the processing region of the semiconductor processing chamber. A bias power may be applied to the substrate support from a bias power source. The methods may include etching the flowable film from a sidewall of the feature within the semiconductor substrate with plasma effluents of the hydrogen-containing precursor. The methods may include densifying remaining flowable film within the feature defined within the semiconductor substrate with plasma effluents of the hydrogen-containing precursor.
1. A processing method comprising:
forming a plasma of a silicon-containing precursor;
depositing a flowable film on a semiconductor substrate with plasma effluents of the silicon-containing precursor, wherein the semiconductor substrate is housed in a processing region of a semiconductor processing chamber, wherein the semiconductor substrate defines a feature within the semiconductor substrate, and wherein the processing region is at least partially defined between a faceplate and a substrate support on which the semiconductor substrate is seated;
forming a plasma of a hydrogen-containing precursor within the processing region of the semiconductor processing chamber, wherein the plasma of the hydrogen-containing precursor is formed at a first power level from a plasma power source, and wherein a bias power is applied to the substrate support from a bias power source at a second power level less than the first power level;
etching the flowable film from a sidewall of the feature within the semiconductor substrate and from overhang regions of the semiconductor substrate with plasma effluents of the hydrogen-containing precursor, wherein the etching fully removes the flowable film from the sidewall of the feature above a base fill of the feature; and
densifying remaining flowable film within the feature defined within the semiconductor substrate with plasma effluents of the hydrogen-containing precursor.
2. The processing method of claim 1 , wherein the feature within the semiconductor substrate is characterized by an aspect ratio of greater than or about 5:1, and wherein the feature is characterized by a width across the feature of less than or about 10 nm.
3. The processing method of claim 1 , wherein the bias power source is operated in a pulsing mode at a pulsing frequency of less than or about 1 kHz.
4. The processing method of claim 3 , wherein the plasma power source is operated in a continuous wave mode while the bias power source is operated in the pulsing mode.
5. The processing method of claim 3 , wherein the bias power source is operated at a duty cycle of less than or about 75%.
6. The processing method of claim 1 , wherein the bias power source is engaged subsequent engagement of the plasma power source.
7. The processing method of claim 1 , wherein the densifying comprises reducing a hydrogen content of the flowable film to less than or about 30 at. %.
8. The processing method of claim 1 , further comprising:
subsequent the densifying, forming a plasma of a conversion precursor; and
converting the flowable film to a modified film.
9. The processing method of claim 8 , wherein the conversion precursor comprises a nitrogen-containing precursor, an oxygen-containing precursor, or a carbon-containing precursor.
10. The processing method of claim 8 , wherein the method is repeated in a second cycle.
11. The processing method of claim 8 , wherein a temperature of the semiconductor substrate is maintained at a temperature of less than or about 0° C. during the method.
12. A processing method comprising:
forming a plasma of a silicon-containing precursor;
depositing a flowable film on a semiconductor substrate with plasma effluents of the silicon-containing precursor, wherein the semiconductor substrate is housed in a processing region of a semiconductor processing chamber, wherein the semiconductor substrate defines a feature within the semiconductor substrate;
forming a plasma of a hydrogen-containing precursor within the processing region of the semiconductor processing chamber, wherein the plasma of the hydrogen-containing precursor is formed at a first power level for a plasma power source, and wherein a bias power is applied from a bias power source to the plasma of the hydrogen-containing precursor at a second power level;
etching the flowable film from a sidewall of the feature defined within the semiconductor substrate with plasma effluents of the hydrogen-containing precursor, wherein the etching fully removes the flowable film from the sidewall of the feature above a base fill of the feature; and
densifying remaining flowable film within the feature defined within the semiconductor substrate with plasma effluents of the hydrogen-containing precursor.
13. The processing method of claim 12 , wherein a plasma power source providing the first power level is operated continuously while the bias power source is operated in a pulsing mode at a frequency of less than or about 1 kHz.
14. The processing method of claim 13 , wherein the bias power source is operated at a duty cycle of less than or about 50%.
15. The processing method of claim 12 , further comprising:
subsequent the densifying, forming a plasma of a conversion precursor; and
converting the flowable film to a modified film.
16. The processing method of claim 15 , wherein the conversion precursor comprises a nitrogen-containing precursor, an oxygen-containing precursor, or a carbon-containing precursor.
17. The processing method of claim 16 , wherein the modified film comprises silicon nitride, silicon oxide, or silicon carbide.
18. A processing method comprising:
forming a plasma of a silicon-containing precursor;
depositing a flowable film on a semiconductor substrate with plasma effluents of the silicon-containing precursor, wherein the semiconductor substrate is housed in a processing region of a semiconductor processing chamber, wherein the semiconductor substrate defines a feature within the semiconductor substrate;
forming a plasma of a hydrogen-containing precursor within the processing region of the semiconductor processing chamber;
etching the flowable film from a sidewall of the feature defined within the semiconductor substrate with plasma effluents of the hydrogen-containing precursor, wherein the etching fully removes the flowable film from the sidewall of the feature above a base fill of the feature;
densifying remaining flowable film within the feature defined within the semiconductor substrate with plasma effluents of the hydrogen-containing precursor;
forming a plasma of a conversion precursor; and
converting the flowable film to a modified film.
19. The processing method of claim 18 , wherein the modified film comprises silicon and one or more of nitrogen, oxygen, or carbon.