Polycrystalline diamond compacts and methods of fabricating same
Embodiments of the invention relate to methods of fabricating leached polycrystalline diamond compacts (“PDCs”) in which a polycrystalline diamond table thereof is leached and resized to provide a leached region having a selected geometry. Creating a leached region having such a selected geometry may improve the performance of the PDC in various conditions, such as impact strength and/or thermal stability.
1. A polycrystalline diamond compact, comprising:
a substrate; and
a polycrystalline diamond table bonded to the substrate, the polycrystalline diamond table including:
an upper surface;
a lower surface spaced from the upper surface;
at least one side surface;
a chamfer extending between the upper surface and the at least one side surface, the chamfer exhibiting a chamfer height measured relative to a cross-sectional view of the polycrystalline diamond compact from the upper surface to an edge of the chamfer closest to the at least one side surface;
a leached region from which an interstitial constituent is depleted, the leached region extending inwardly from the upper surface to a depth, wherein a cross-sectional view of the leached region exhibits a depth as measured inwardly from the chamfer that decreases along the chamfer in a direction towards the at least one side surface; and
an unleached region extending between the lower surface and the leached region, the unleached region having a magnetic saturation of about 15 G·cm 3 /g or less and a specific permeability of about 0.10 G·cm 3 /g·Oe or less, the unleached region extending from the lower surface to the leached region and having an outer region extending inward from the at least one side surface and increasing in thickness from the at least one side surface.
2. The polycrystalline diamond compact of claim 1 , wherein the unleached region of the polycrystalline diamond table has a magnetic saturation of about 5 G·cm 3 /g to about 15 G·cm 3 /g and a specific permeability of about 0.060 G·cm 3 /g·Oe to about 0.090 G·cm 3 /g·Oe.
3. The polycrystalline diamond compact of claim 1 , wherein the unleached region has a metal-solvent catalyst content of about 7.5 wt % or less.
4. The polycrystalline diamond compact of claim 1 , wherein the cross-sectional view of the leached region extends substantially to the edge of the chamfer at the at least one side surface.
5. The polycrystalline diamond compact of claim 1 , wherein the cross-sectional view of the leached region extends to the at least one side surface below the edge of the chamfer.
6. The polycrystalline diamond compact of claim 1 , wherein the cross-sectional view of the leached region extends along the at least one side surface a distance of less than about 100 μm.
7. The polycrystalline diamond compact of claim 1 , wherein the depth of a portion of the cross-sectional view of the leached region adjacent to the upper surface is substantially uniform.
8. The polycrystalline diamond compact of claim 1 , wherein the interstitial constituent includes a metallic catalyst.
9. A polycrystalline diamond compact, comprising:
a substrate; and
a polycrystalline diamond table bonded to the substrate, the polycrystalline diamond table including:
an upper surface;
a lower surface spaced from the upper surface;
at least one side surface;
a chamfer extending between the upper surface and the at least one side surface, the chamfer exhibiting a chamfer height measured relative to a cross-sectional view of the polycrystalline diamond compact from the upper surface to an edge of the chamfer closest to the at least one side surface;
a leached region from which an interstitial constituent is depleted, the leached region extending inwardly from the upper surface to a depth, the leached region including a lowermost portion that extends below the chamfer along the at least one side surface; and
an unleached region extending between the lower surface and the leached region, the unleached region having a magnetic saturation of about 15 G·cm 3 /g or less and a specific permeability of about 0.10 G·cm 3 /g·Oe or less;
wherein the cross-sectional view of the leached region exhibits a depth as measured inwardly from the chamfer that decreases along the chamfer in a direction towards the at least one side surface,
wherein the unleached region exhibits a boundary with the leached region that is not complementary shaped to the upper surface and the chamfer and is not complementary shaped with the lower surface,
wherein a distance between the lowermost portion of the leached region and the edge of the chamfer closest to the at least one side surface is less than about 100 μm.
10. The polycrystalline diamond compact of claim 9 , wherein the unleached region has a magnetic saturation of about 5 G·cm 3 /g to about 15 G·cm 3 /g and a specific permeability of about 0.060 G·cm 3 /g·Oe to about 0.090 G·cm 3 /g·Oe.
11. The polycrystalline diamond compact of claim 9 , wherein the unleached region has a metal-solvent catalyst content of about 7.5 wt % or less.
12. The polycrystalline diamond compact of claim 9 , wherein the depth of a portion of the leached region adjacent to the upper surface is substantially uniform.
13. The polycrystalline diamond compact of claim 9 , wherein the leached region is substantially free of the interstitial constituent.
14. The polycrystalline diamond compact of claim 9 , wherein the depth of a portion of the cross-sectional view of the leached region adjacent to the upper surface is substantially uniform.
15. The polycrystalline diamond compact of claim 9 , wherein the interstitial constituent includes a metallic catalyst.
16. A polycrystalline diamond compact, comprising:
a substrate; and
a polycrystalline diamond table bonded to the substrate, the polycrystalline diamond table including:
an upper surface;
a lower surface spaced from the upper surface;
at least one side surface;
a chamfer extending between the upper surface and the at least one side surface, the chamfer exhibiting a chamfer height measured relative to a cross-sectional view of the polycrystalline diamond compact from the upper surface to an edge of the chamfer closest to the at least one side surface; and
a leached region from which an interstitial constituent is depleted, the leached region extending inwardly from the upper surface to a depth, the leached region including a lowermost portion that extends below the chamfer along the at least one side surface; and
an unleached region extending between the lower surface and the leached region, the unleached region having a magnetic saturation of about 15 G·cm 3 /g or less and a specific permeability of about 0.10 G·cm 3 /g·Oe or less;
wherein the cross-sectional view of the leached region exhibits a depth as measured inwardly from the chamfer that decreases along the chamfer in a direction towards the at least one side surface;
wherein the cross-sectional view of the leached region extends along the at least one side surface a distance of less than about 100 μm; and
wherein the unleached region includes an outer region extending inward from the at least one side surface and that exhibits a boundary with the leached region, the unleached region narrowing between the boundary and the lower surface towards the at least one side surface.
17. The polycrystalline diamond compact of claim 16 , wherein the unleached region has a magnetic saturation of about 5 G·cm 3 /g to about 15 G·cm 3 /g, a specific permeability of about 0.060 G·cm 3 /g·Oe to about 0.090 G·cm 3 /g·Oe, and a metal-solvent catalyst content of about 7.5 wt % or less.