IP Library Granted Patent US 11,307,807
Granted Patent B2
US 11,307,807 · App. 16/941,828 · Granted Apr 19, 2022

Memory system, memory controller, and method for operating memory system for determining read biases for read retry operation

Inventor: Chan Hyeok Cho (Seoul, KR)
Assignee: SK hynix Inc.
G06F3/0659G06F3/0604G06F3/0673
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Quick Facts
Patent No.
US 11,307,807
App. No.
16/941,828
Granted
Apr 19, 2022
Kind
B2
Abstract

A memory system may perform a first read retry operation using at least one read bias of multiple read biases in a priority read bias group, among a plurality of read biases; and perform, according to a result of the first read retry operation, a second read retry operation using one or more remaining read biases, not in the priority read bias group, in the read retry table. At this time, the read biases in the priority read bias group may be selected prior to the remaining read biases when performing the read retry operation on the target memory area. As a result, the memory system is able to minimize degradation of reading performance due to the read retry operation and reduce the number of unnecessary reads when performing the read retry operation.

Claims (34)

1. A memory system comprising:

a memory device comprising a plurality of memory areas; and

a memory controller configured to control, when performing a read retry operation on a target memory area of the plurality of memory areas, the memory device to:

perform a first read retry operation on the target memory area using at least one read bias of multiple read biases in a priority read bias group, among a plurality of read biases in a read retry table; and

perform, according to a result of the first read retry operation, a second read retry operation on the target memory area using one or more remaining read biases, not in the priority read bias group, in the read retry table,

wherein the read biases in the priority read bias group are selected prior to the remaining read biases when performing the read retry operation on the target memory area, and

wherein, when performing the first read retry operation, a first read bias in a priority read bias group, used for the first read retry operation, is selected on the basis of the number of times reading data from any one of a plurality of memory areas succeeded during a set time period.

2. The memory system of claim 1 , wherein the memory controller is configured to control the memory device to perform the first read retry operation until reading data from the target memory area succeeds using one of the read biases in the priority read bias group or until reading of data from the target memory area fails for all read biases in the priority read bias group.

3. The memory system of claim 1 , wherein when performing the first read retry operation, the first read bias is selected on the basis of a time at which reading of data from any one of the plurality of memory areas succeeded.

4. The memory system of claim 1 , wherein the memory controller is configured to update information on the priority read bias group on the basis of at least one of results of the first read retry operation and the second read retry operation.

5. The memory system of claim 4 , wherein the memory controller is configured to, when reading data from the target memory area succeeds using a second read bias of the remaining read biases when performing the second read retry operation, add the second read bias to the priority read bias group.

6. The memory system of claim 5 , wherein the memory controller is configured to, when the number of read biases in the priority read bias group exceeds a threshold number of read biases, evict one sacrificial read bias from the priority read bias group.

7. The memory system of claim 6 , wherein the sacrificial read bias is selected on the basis of a time at which reading data from any one of the plurality of memory areas succeeded.

8. The memory system of claim 6 , wherein the sacrificial read bias is selected on the basis of the number of times reading data from any one of the plurality of memory areas succeeded during a set time period.

9. A memory controller comprising:

a memory interface configured to communicate with a memory device comprising a plurality of memory areas; and

a control circuit configured to control, when performing a read retry operation on a target memory area of the plurality of memory areas, the memory device to:

perform a first read retry operation on the target memory area at least one read bias of multiple read biases in a priority read bias group, among a plurality of read biases in a read retry table; and

perform, according to a result of the first read retry operation, a second read retry operation on the target memory area using one or more remaining read biases, not in the priority read bias group, in the read retry table,

wherein the read biases in the priority read bias group are selected prior to the remaining read biases when performing the read retry operation on the target memory area, and

wherein, when performing the first read retry operation, a first read bias in a priority read bias group, used for the first read retry operation, is selected on the basis of the number of times reading data from any one of a plurality of memory areas succeeded during a set time period.

10. The memory controller of claim 9 , wherein the control circuit is configured to control the memory device to perform the first read retry operation until reading data from the target memory area succeeds using one of the read biases in the priority read bias group or until reading of data from the target memory area fails for all read biases in the priority read bias group.

11. The memory controller of claim 9 , wherein, when performing the first read retry operation, the first read bias is selected on the basis of a time at which reading data from any one of the plurality of memory areas succeeds.

12. The memory controller of claim 9 , wherein the control circuit is configured to update information on the priority read bias group on the basis of at least one of results of the first read retry operation and the second read retry operation.

13. The memory controller of claim 12 , wherein the control circuit is configured to, when reading data from the target memory area succeeds using a second read bias of the remaining read biases when performing the second read retry operation, add the second read bias to the priority read bias group.

14. The memory controller of claim 13 , wherein the control circuit is configured to, when the number of read biases in the priority read bias group exceeds a threshold number of read biases, evict one sacrificial read bias from the priority read bias group.

15. The memory controller of claim 14 , wherein the sacrificial read bias is selected on the basis of a time at which reading data from any one of the plurality of memory areas succeeded.

16. The memory controller of claim 14 , wherein the sacrificial read bias is selected on the basis of the number of times reading data from any one of the plurality of memory areas succeeded during a set time period.

17. A method for operating a memory system, the method comprising:

performing a first read retry operation on a target memory area at least one read bias of multiple read biases in a priority read bias group, among a plurality of read biases in a read retry table; and

performing, according to a result of the first read retry operation, a second read retry operation on the target memory area using one or more remaining read biases, not in the priority read bias group, in the read retry table,

wherein the read biases in the priority read bias group are selected prior to the remaining read biases when performing the read retry operation on the target memory area, and

wherein, when performing the first read retry operation, the first read bias in a priority read bias group, used for the first read retry operation, is selected on the basis of the number of times reading data from any one of a plurality of memory areas succeeded during a set time period.

18. The method of claim 17 , further comprising updating information on the priority read bias group on the basis of at least one of the results of the first read retry operation and the second read retry operation.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 7, 2024
From: SK HYNIX INC.
To: MIMIRIP LLC
Reel/Frame 067335/0246 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 29, 2020
From: CHO, CHAN HYEOK
To: SK HYNIX INC.
Reel/Frame 053340/0900 →