Cutoff modes for metasurface tuning
An active metasurface includes a number of periodically-repeated unit cells arranged on a substrate that each include a plasmonic waveguide shaped and sized to provide a cutoff mode that captures light of a target wavelength. The active metasurface includes an index modulation controller that controllably varies a voltage differential across each one of the periodically-repeated cells to change a phase of light incident on the metasurface.
1. A metasurface comprising:
a number of periodically-repeated unit cells arranged on a substrate, each of the unit cells including a plasmonic waveguide defined by a metal-oxide-semiconductor (MOS) capacitor structure comprising a metal gate electrode, a semiconductor block, and an oxide insulating layer separating the metal gate electrode and the semiconductor block, with the semiconductor block and the oxide insulating layer in contact with the substrate, the plasmonic waveguide shaped and sized to provide a cutoff mode that captures light of a target wavelength; and
an index modulation controller that controllably varies a voltage differential across each one of the periodically-repeated cells to change a phase of light incident on the metasurface, wherein each cell of the periodically-repeated unit cells facilitates transmission of light through a thinnest dimension of the metasurface.
2. The metasurface of claim 1 , wherein the oxide insulating layer comprises HfO 2 with a thickness less than about 5 nm.
3. The metasurface of claim 2 , wherein the plasmonic waveguide of each of the periodically-repeated unit cells includes a silicon block that forms an interface with the HfO 2 .
4. The metasurface of claim 1 , further comprising:
an index modulation controller adapted to control each of the periodically-repeated unit cells to selectively alter an index of refraction of a semiconductor within the MOS-capacitor structure.
5. The metasurface of claim 1 , wherein the index modulation controller is adapted to control each of the unit cells to steer outgoing light across a field of view of at least 60 degrees.
6. The metasurface of claim 1 , wherein the semiconductor of the MOS capacitor structure includes negatively-doped silicon.
7. A method comprising:
receiving light at each of a number of cells arranged on a substrate, each of the cells including a plasmonic waveguide that is part of a metal-oxide-semiconductor (MOS) capacitor structure defined by a metal gate electrode, a semiconductor block, and an oxide insulating layer separating the metal gate electrode and the semiconductor block, with the semiconductor block and the oxide insulating layer in contact with the substrate, the plasmonic waveguide shaped and sized to provide a cutoff mode that captures light of a target wavelength; and
dynamically altering a voltage differential applied across each one of the cells to alter a refractive index within each of the cells and to controllably steer light exiting the cells, each cell of the number of cells facilitating transmission of light through a thinnest dimension of the substrate.
8. The method of claim 7 , wherein the oxide insulating layer of the MOS capacitor structure comprises HfO 2 with a thickness less than about 5 nm.
9. The method of claim 8 , wherein the plasmonic waveguide of each of the cells includes a silicon block that forms an interface with the HfO 2 .
10. The method of claim 7 , wherein each of the cells is controllable to steer outgoing light across a field of view of at least 60 degrees.
11. The method of claim 7 , wherein a semiconductor of the MOS capacitor structure includes negatively-doped silicon.
12. A metasurface comprising:
a number of repeating unit cells on a substrate, each unit cell facilitating transmission of light through a thinnest dimension of the metasurface, the unit cell including a metal-oxide-semiconductor (MOS) capacitor structure with a semiconductor block and an oxide layer tuned to provide a cutoff mode and capture light at a target wavelength, each of the semiconductor block and the oxide layer in contact with the substrate; and
an index modulator that controllably varies a voltage differential across the unit cell to change a phase of light incident on a first surface of the unit cell and controllably steer light exiting the unit cell.
13. The metasurface of claim 12 , wherein the oxide layer has a thickness less than about 5 nm.
14. The metasurface of claim 12 , wherein the semiconductor block includes silicon.
15. The metasurface of claim 12 , further comprising:
electrodes on opposite sides of the unit cell, the electrodes being separated from one another in a plane defined by the metasurface.
16. The metasurface of claim 1 , wherein each plasmonic waveguide has a resonator in the semiconductor block near the interface with the oxide layer less than about 5 nm thick, and a resonator in the metal gate electrode near the other interface with the oxide layer at or less than about 30 nm thick.
17. The metasurface of claim 7 , wherein each plasmonic waveguide has a resonator in the semiconductor block near the interface with the oxide layer less than about 5 nm thick, and a resonator in the metal gate electrode near the other interface with the oxide layer at or less than about 30 nm thick.
18. The metasurface of claim 7 , the MOS capacitor structure present on a silicon substrate, with the semiconductor block and the oxide insulating layer in contact with the silicon substrate.
19. The metasurface of claim 1 , the MOS capacitor structure present on a silicon substrate, with the semiconductor block and the oxide insulating layer in contact with the silicon substrate.