Potassium sodium niobate sputtering target and production method thereof
A potassium sodium niobate sputtering target having a relative density of 95% or higher. A method of producing a potassium sodium niobate sputtering target, including the steps of mixing a Nb 2 O 5 powder, a K 2 Co 3 powder, and a Na 2 Co 3 powder, pulverizing the mixed powder to achieve a grain size d 50 of 100 μm or less, and performing hot press sintering to the obtained pulverized powder in an inert gas or vacuum atmosphere under conditions of a temperature of 900° C. or higher and less than 1150° C., and a load of 150 to 400 kgf/cm 2 . The present invention aims to provide a high density potassium sodium niobate sputtering target capable of industrially depositing potassium sodium niobate films via the sputtering method.
1. A potassium sodium niobate sputtering target, comprising a relative density is 95% or higher, a volume resistivity is less than 1000 Ωcm, a variation of maximum value/minimum value in the volume resistivity is less than 1.5, and a content ratio of potassium, sodium and niobium is Nb:K:Na=1.0:X:1-X, wherein X is 0.3≥X, in terms of atomic ratio.
2. The potassium sodium niobate sputtering target according to claim 1 , wherein an average crystal grain size is 1 to 20 μm.
3. The potassium sodium niobate sputtering target according to claim 2 , wherein a flexural strength is 50 MPa or more.
4. The potassium sodium niobate sputtering target according to claim 1 , a flexural strength is 50 MPa or more.
5. A method of producing the potassium sodium niobate sputtering target according to claim 1 , wherein the method includes the steps of mixing a Nb 2 O 5 powder, a K 2 Co 3 powder, and a Na 2 Co 3 powder, pulverizing the mixed powder to achieve a grain size d 50 of 100 μm or less, and performing hot press sintering to the obtained pulverized powder in an inert gas or vacuum atmosphere under conditions of a temperature of 900° C. or higher and less than 1150° C., and a load of 150 to 400 kgf/cm 2 .
6. The method of producing a potassium sodium niobate sputtering target according to claim 5 , wherein the method further includes the step of performing, after hot press sintering, vacuum heat treatment at 600° C. or higher and 900° C. or less, or performing HIP treatment at 800° C. or higher and 1150° C. or less.