IP Library Granted Patent US 11,694,836
Granted Patent B2
US 11,694,836 · App. 16/958,049 · Granted Jul 4, 2023

On-chip multi-layer transformer and inductor

Inventors: Chuanzhao Yu (Phoenix, AZ); Qiang Li (Gilbert, AZ); David Newman (Tempe, AZ)
Assignee: Intel Corporation
H01F27/2804H01F41/041H01F2027/2809
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Quick Facts
Patent No.
US 11,694,836
App. No.
16/958,049
Granted
Jul 4, 2023
Kind
B2
Abstract

A stacked transformer or inductor apparatus including a first layer with a first layer wire element extending around a center axis and a second layer with a second layer wire element. The second layer element includes side by side first and second wire components in parallel spaced relation extending around the center axis and the first wire component is connected to the first layer wire element to form a primary turn winding. A third layer includes a third layer wire element extending around the center axis and connected to the second wire component of the second layer wire element to form a secondary turn winding partially overlapping with the primary turn winding.

Claims (30)

1. A stacked inductance apparatus, comprising:

a first winding comprising a first wire section and a second wire section, the first wire section and the second wire section are disposed parallel to each other in a first horizontal plane associated with a center axis, and the first winding associated with an equivalent current flow path within the first horizontal plane;

a second winding, the second winding associated with a current flow path, the second winding positioned in the first horizontal plane between the first wire section and the second wire section to align the equivalent current flow path of the first winding with the current flow path of the second winding; and

at least one wire section, the at least one wire section extending from the second winding and disposed on a second horizontal plane, the second horizontal plane being parallel to the first horizontal plane.

2. The apparatus according to claim 1 , wherein the first winding connects with the second winding at a bridge element.

3. The apparatus according to claim 2 , wherein at the bridge element a vertically displaced via connects the first winding to the second winding.

4. The apparatus according to claim 2 , wherein the bridge element comprises a plurality of wire sections extending from the second winding and disposed on the second horizontal plane, the plurality of wire sections including the at least one wire section.

5. The apparatus according to claim 2 , wherein the first winding and second winding are made from a material having a resistance of less than a resistance of a material of the bridge element.

6. The apparatus of claim 1 , wherein the first and second wire sections of the first winding are metal traces.

7. The apparatus of claim 1 , wherein the second winding is a metal trace.

8. The apparatus of claim 1 , wherein the first winding has at least two turns.

9. The apparatus of claim 8 , wherein the second winding has at least two turns.

10. A method of manufacturing an inductance apparatus, comprising:

stacking wire elements above a substrate to form stacked wire elements;

connecting a first wire section of a shared wire element to the stacked wire elements to form a first winding, the shared wire element including the first wire section and a second wire section disposed in a parallel spaced relation within a first horizontal plane; and

connecting the second wire section of the shared wire element to a secondary wire element of the stacked wire elements to form a second winding such that the secondary wire element is in a second horizontal plane, partially overlaps the first winding, and fully overlaps the second winding.

11. The method of claim 10 , further comprising:

configuring a partial overlap of the secondary wire element with the first winding based on a mutual coupling factor of the inductance apparatus.

12. The method of claim 10 , wherein the first wire section and the second wire section are metal traces.

13. The method of claim 12 , wherein each of the metal traces is made from a material having a resistance less than a resistance of the stacked wire elements.

14. The method of claim 10 , wherein the shared wire element is made of copper and the secondary wire element is made of aluminum.

15. A method of manufacturing an inductance apparatus, comprising:

stacking wire elements on a substrate to form stacked wire elements;

placing a first winding on the stacked wire elements, the first winding including a first wire section and a second wire section in a parallel spaced relation within a horizontal plane; and

placing a second winding on the stacked wire elements between the first and second wire sections within the horizontal plane to vertically align an equivalent current flow of the first winding with a current flow of the second winding.

16. The method of claim 15 , further comprising:

connecting the first winding to the second winding to form a vertical bridge element.

17. The method of claim 15 , wherein the first winding comprises two metal traces and the second winding comprises a single metal trace.

18. The method of claim 17 , wherein a resistance of the metal traces of the first winding and the second winding are each less than a resistance of the stacked wire elements.

19. The method of claim 15 , wherein the first winding has at least two turns and a winding of a first turn of the first winding has a different width than a winding of a second turn of the first winding.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 22, 2021
From: INTEL IP CORPORATION
To: INTEL CORPORATION
Reel/Frame 056337/0609 →