Photodiode, method for preparing the same, and electronic device
The present disclosure relates to a photodiode, a method for preparing the same, and an electronic device. The photodiode includes: a first electrode layer and a semiconductor structure that are stacked, a surface of the semiconductor structure away from the first electrode layer having a first concave-convex structure; and a second electrode layer arranged on a surface of the semiconductor structure away from the first electrode layer, a surface of the second electrode layer away from the first electrode layer having a second concave-convex structure.
1. A photodiode, comprising:
a first electrode layer and a semiconductor structure that are stacked, wherein a surface of the semiconductor structure away from the first electrode layer has a first concave-convex structure, wherein the first concave-convex structure is crystallized; and
a second electrode layer arranged on the surface of the semiconductor structure away from the first electrode layer, wherein a surface of the second electrode layer away from the first electrode layer has a second concave-convex structure,
wherein the semiconductor structure comprises:
a first semiconductor layer arranged on a surface of the first electrode layer; and
a second semiconductor layer arranged on a face of the first semiconductor layer away from the first electrode layer, wherein a surface of the second semiconductor layer away from the first electrode layer has the first concave-convex structure,
wherein the semiconductor structure further comprises an intrinsic amorphous silicon layer; wherein the first semiconductor layer comprises a P-type amorphous silicon layer, the intrinsic amorphous silicon layer is located on a surface of the P-type amorphous silicon layer away from the first electrode layer, and a surface of the intrinsic amorphous silicon layer away from the first electrode layer has a third concave-convex structure formed by crystallizing amorphous silicon in its surface; and wherein the second semiconductor layer comprises an N-type metal oxide semiconductor layer arranged on a surface of the intrinsic amorphous silicon layer away from the first electrode layer, and a surface of the N-type metal oxide semiconductor layer away from the first electrode layer has the first concave-convex structure,
or
wherein the semiconductor structure further comprises an intrinsic amorphous silicon layer; wherein the first semiconductor layer comprises an N-type metal oxide semiconductor layer, the intrinsic amorphous silicon layer is located on a surface of the N-type metal oxide semiconductor layer away from the first electrode layer, and the surface of the intrinsic amorphous silicon layer away from the first electrode layer has a third concave-convex structure formed by crystallizing amorphous silicon in its surface; and wherein the second semiconductor layer comprises a P-type amorphous silicon layer arranged on a surface of the intrinsic amorphous silicon layer away from the first electrode layer, and a surface of the P-type amorphous silicon layer away from the first electrode layer has the first concave-convex structure.
2. The photodiode of claim 1 , wherein the first concave-convex structure, the second concave-convex structure, and the third concave-convex structure have substantially the same profile.
3. The photodiode of claim 1 , wherein the convexes in the first concave-convex structure, the second concave-convex structure, and the third concave-convex structure have a height in a direction perpendicular to a surface of the first electrode layer in contact with the semiconductor structure in a range from 30 nm to 80 nm, a maximum width in the direction parallel to the surface of the first electrode layer in contact with the semiconductor structure in a range from 0.1 μm to 0.5 μm, and a pitch between adjacent convexes in a range from 0.1 μm to 0.4 μm.
4. The photodiode of claim 1 , wherein the second electrode layer is a transparent electrode layer.
5. An electronic device comprising the photodiode of claim 1 .
6. The electronic device of claim 5 , wherein the first concave-convex structure, the second concave-convex structure, and the third concave-convex structure have substantially the same profile.
7. The electronic device of claim 5 , wherein the convexes in the first concave-convex structure, the second concave-convex structure, and the third concave-convex structure have a height in a direction perpendicular to a surface of the first electrode layer in contact with the semiconductor structure in a range from 30 nm to 80 nm, a maximum width in the direction parallel to the surface of the first electrode layer in contact with the semiconductor structure in a range from 0.1 μm to 0.5 μm, and a pitch between adjacent convexes in a range from 0.1 μm to 0.4 μm.
8. The electronic device of claim 5 , wherein the second electrode layer is a transparent electrode layer.